Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate von Bessolov, V.N., Karpov, D.V., Konenkova, E.V., Lipovskii, A.А., Osipov, A.V., Redkov, A.V., Soshnikov, I.P., Kukushkin, S.A.

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Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates von Kukushkin, S. A., Osipov, A. V., Bessolov, V. N., Konenkova, E. V., Panteleev, V. N.

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Effect of the n- and p-type Si substrates with a sic buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN von Bessolov, V.N, Grashchenko, A.S, Konenkova, E.V, Myasoedov, A.V, Osipov, A.V, Redkov, A.V, Rodin, S.N, Rubetsr, V.P, Kukushkin, S.A

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Raman scattering from LO–phonon–plasmon coupled modes in Ag-coated GaN nanocrystals von Bessolov, V.N., Konenkova, E.V., Zhilyaev, Yu.V., Paez Sierra, B.A., Zahn, D.R.T.

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Sulphide passivation of GaAs: study of surface band bending von Berkovits, V.L., Bessolov, V.N., L'vova, T.V., Makarenko, I.V., Safarov, V.I., Tsarenkov, B.V.

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METHOD FOR PRODUCING EPITAXIAL LAYER OF III- NITRIDE SUPERCONDUCTOR ON FOREIGN SUBSTRATE von KUKUSHKIN S.A, BESSOLOV V.N, OSIPOV A.V, LUK'JANOV A.V

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METHOD OF LIQUID EPITAXY OF VARYING-ZONE STRUCTURES von LIDEJKIS T.P.,SU, YAKOVLEV YU.P.,SU, BARANOV A.N.,SU, BESSOLOV V.N.,SU

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METHOD OF PRODUCING SEMICONDUCTOR STRUCTURE von TSARENKOV B.V.,SU, LIDEJKIS T.P.,SU, YAKOVLEV YU.P.,SU, BARANOV A.N.,SU, BESSOLOV V.N.,SU

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VEHICULAR TRAFFIC TUNNEL OF URBAN RING HIGHWAY OF MEGAPOLIS von LUBOTSKIJ S.JU, SINITSKIJ G.M, CHUVERINA S.G, AKSENOVA O.I, ALEKSEENKO E.I, NIKOLAEV S.V, BESSOLOV V.A, MAKSIMOVA V.N, MILLERMAN S.I, SELIVANOV N.P, MOROZOV I.A

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METHOD FOR ERECTION OF VEHICULAR TRAFFIC TUNNEL OF URBAN RING HIGHWAY OF MEGAPOLIS von LUBOTSKIJ S.JU, SINITSKIJ G.M, CHUVERINA S.G, AKSENOVA O.I, ALEKSEENKO E.I, NIKOLAEV S.V, BESSOLOV V.A, MAKSIMOVA V.N, MILLERMAN S.I, SELIVANOV N.P, MOROZOV I.A

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