Continuous deep reactive ion etching of tapered via holes for three-dimensional integration von Li, R, Lamy, Y, Besling, W F A, Roozeboom, F, Sarro, P M

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Maxwell-Wagner instability in bilayer dielectric stacks von Jinesh, K. B., Lamy, Y., Klootwijk, J. H., Besling, W. F. A.

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Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy von Nohira, H., Tsai, W., Besling, W., Young, E., Petry, J., Conard, T., Vandervorst, W., De Gendt, S., Heyns, M., Maes, J., Tuominen, M.

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Characterisation of ALCVD Al2O3–ZrO2 nanolaminates, link between electrical and structural properties von Besling, W.F.A., Young, E., Conard, T., Zhao, C., Carter, R., Vandervorst, W., Caymax, M., De Gendt, S., Heyns, M., Maes, J., Tuominen, M., Haukka, Suvi

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Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2 von Satta, A., Schuhmacher, J., Whelan, C. M., Vandervorst, W., Brongersma, S. H., Beyer, G. P., Maex, K., Vantomme, A., Viitanen, M. M., Brongersma, H. H., Besling, W. F. A.

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Silicon out-diffusion and aluminum in-diffusion in devices with atomic-layer deposited La2O3 thin films von Jinesh, K. B., Lamy, Y., Wolters, R. A. M., Klootwijk, J. H., Tois, E., Roozeboom, F., Besling, W. F. A.

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Cubic phase stabilization and improved dielectric properties of atomic-layer-deposited EryHf1-yOx thin films von Jinesh, K.B., Lamy, Y., Tois, E., Forti, R., Kaiser, M., Bakker, F., Wondergem, H.J., Besling, W.F.A., Roozeboom, F.

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Correlation between electromigration and Cu-contact angle after de-wetting von Vanypre, T., Cordeau, M., Mourier, T., Besling, W.F.A., Dupuy, J-C., Torres, J.

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Laser-induced chemical vapor deposition of nanostructured silicon carbonitride thin films von Besling, W. F. A., Goossens, A., Meester, B., Schoonman, J.

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Diffusion Barrier Deposition on a Copper Surface by Atomic Layer Deposition von Elers, K.-E., Saanila, V., Soininen, P. J., Li, W.-M., Kostamo, J. T., Haukka, S., Juhanoja, J., Besling, W. F. A.

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Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1−yOx thin films von Jinesh, K. B., Besling, W. F. A., Tois, E., Klootwijk, J. H., Wolters, R., Dekkers, W., Kaiser, M., Bakker, F., Tuominen, M., Roozeboom, F.

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Atomic layer deposition of WxN/TiN and WNxCy/TiN nanolaminates von ELERS, K.-E, SAANILA, V, LI, W.-M, SOININEN, P. J, KOSTAMO, J. T, HAUKKA, S, JUHANOJA, J, BESTING, W. F. A

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Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications von Hoogeland, D., Jinesh, K. B., Roozeboom, F., Besling, W. F. A., van de Sanden, M. C. M., Kessels, W. M. M.

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Growth and characterization of atomic layer deposited WC0.7N0.3 on polymer films von Hoyas, A. Martin, Schuhmacher, J., Shamiryan, D., Waeterloos, J., Besling, W., Celis, J. P., Maex, K.

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Line resistance behaviour in narrow lines patterned by a TiN hard mask spacer for 45 nm node interconnects von Besling, W.F.A., Broekaart, M., Arnal, V., Torres, J.

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Charge conduction mechanisms of atomic-layer-deposited Er2O3 thin films von Jinesh, K. B., Lamy, Y., Tois, E., Besling, W. F. A.

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In-line electrical metrology for high-K gate dielectrics deposited by atomic layer CVD von DE WITTE, H, PASSEFORT, S, BESTING, W, MAES, J. W. H, EASON, K, YOUNG, E, RITTERSMA, Z. M, HEYNS, M

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TOF-SIMS as a rapid diagnostic tool to monitor the growth mode of thin (high k) films von Conard, T., Vandervorst, W., Petry, J., Zhao, C., Besling, W., Nohira, H., Richard, O.

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Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al[sub 2]O[sub 3] Thin Films von Jinesh, K. B., van Hemmen, J. L., van de Sanden, M. C. M., Roozeboom, F., Klootwijk, J. H., Besling, W. F. A., Kessels, W. M. M.

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Charge conduction mechanisms of atomic-layer-deposited Er 2 O 3 thin films von Jinesh, K. B., Lamy, Y., Tois, E., Besling, W. F. A.

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