Structure of CdZnTe films on glass von Stolyarova, S, Edelman, F, Chack, A, Berner, A, Werner, P, Zakharov, N, Vytrykhivsky, M, Beserman, R, Weil, R, Nemirovsky, Y

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Structure of PECVD Si:H films for solar cell applications von Edelman, F, Chack, A, Weil, R, Beserman, R, Khait, Yu.L, Werner, P, Rech, B, Roschek, T, Carius, R, Wagner, H, Beyer, W

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Effects of doping on the kinetics of laser-induced low-temperature crystallization of amorphous silicon von Khait, Yu L., Beserman, R., Chack, A., Beyer, W.

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Evidence of Si presence in self-assembled Ge islands deposited on a Si(001) substrate von Magidson, V., Regelman, D. V., Beserman, R., Dettmer, K.

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Kinetics of laser-induced low-temperature crystallization of amorphous silicon von Khait, Yu. L., Beserman, R., Chack, A., Weil, R., Beyer, W.

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Low temperature nanoscopic kinetics of hydrogen plasma-enhanced crystallization of a-Si:H films von Khait, Yu. L., Weil, R., Beserman, R., Edelman, F., Beyer, W., Rech, B.

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Ultrasound treatment for porous silicon photoluminescence enhancement von El-Bahar, A., Stolyarova, S., Chack, A., Weil, R., Beserman, R., Nemirovsky, Y.

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Temperature dependence of the first-order Raman phonon line of diamond von Liu, Ming S., Bursill, Les A., Prawer, S., Beserman, R.

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Charge transfer of carriers by interband photoexcitation in asymmetric GaAs/AlGaAs coupled quantum wells von Levy, M., Khait, Yu. L., Beserman, R., Sa’ar, A., Thierry-Mieg, V., Planel, R.

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MOCVD growth of ordered Cd(1−x)ZnxTe epilayers von Cohen, K, Stolyarova, S, Amir, N, Chack, A, Beserman, R, Weil, R, Nemirovsky, Y

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Initial crystallization stage of amorphous germanium films von EDELMAN, F, KOMEM, Y, BENDAYAN, M, BESERMAN, R

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Comparison between the crystallization processes by laser and furnace annealing of pure and doped a-Si:H von Beserman, R, Khait, Yu.L, Chack, A, Weil, R, Beyer, W

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Characterization of CdTe substrates and MOCVD Cd1-xZnxTe epilayers von LEVY, M, AMIR, N, KHANIN, E, NEMIROVSKY, Y, BESERMAN, R

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Valence band splitting in Cd(1-x)ZnxTe epilayers von COHEN, K, BESERMAN, R, STOLYAROVA, S, WEIL, R, NEMIROVSKY, Y

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Long-range order in CdZnTe epilayers von Amir, N, Cohen, K, Stolyarova, S, Chack, A, Beserman, R, Weil, R, Nemirovsky, Y

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Cross-section of Si:H solar cells prepared by PECVD at the edge of crystallization von Edelman, F, Chack, A, Werner, P, Scholz, R, Weil, R, Beserman, R, Roschek, T, Rech, B, Beyer, W

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Hardening of CdZnTe by Acoustic Wave Treatment von Edelman, F., Zeckzer, A., Grau, P., Stolyarova, S., Weil, R., Berner, A., Beserman, R., Nemirovsky, Y.

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Characterization of CdTe substrates and MOCVD Cd1-XZnXTe epilayers by Raman, photoluminescence and X-ray diffraction techniques von LEVY, M, AMIR, N, KHANIN, E, MURANEVICH, A, NEMIROVSKY, Y, BESERMAN, R

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Dielectric and pyroelectric properties of ordered CdZnTe layers grown by MOCVD von Chack, A., Cohen, K., Stolyarova, S., Nemirovsky, Y., Beserman, R., Weil, R.

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Influence of quasi-two-dimensional doping on the Raman spectrum of Si1−xGex/Si quantum wells von Bendayan, M., Beserman, R., Dettmer, K.

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