Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence von Babin, Charles, Stöhr, Rainer, Morioka, Naoya, Linkewitz, Tobias, Steidl, Timo, Wörnle, Raphael, Liu, Di, Hesselmeier, Erik, Vorobyov, Vadim, Denisenko, Andrej, Hentschel, Mario, Gobert, Christian, Berwian, Patrick, Astakhov, Georgy V., Knolle, Wolfgang, Majety, Sridhar, Saha, Pranta, Radulaski, Marina, Son, Nguyen Tien, Ul-Hassan, Jawad, Kaiser, Florian, Wrachtrup, Jörg

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Laser Writing of Scalable Single Color Centers in Silicon Carbide von Chen, Yu-Chen, Salter, Patrick S, Niethammer, Matthias, Widmann, Matthias, Kaiser, Florian, Nagy, Roland, Morioka, Naoya, Babin, Charles, Erlekampf, Jürgen, Berwian, Patrick, Booth, Martin J, Wrachtrup, Jörg

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Growth and characterization of thorium-doped calcium fluoride single crystals von Beeks, Kjeld, Sikorsky, Tomas, Rosecker, Veronika, Pressler, Martin, Schaden, Fabian, Werban, David, Hosseini, Niyusha, Rudischer, Lukas, Schneider, Felix, Berwian, Patrick, Friedrich, Jochen, Hainz, Dieter, Welch, Jan, Sterba, Johannes H., Kazakov, Georgy, Schumm, Thorsten

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Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates von Kallinger, Birgit, Polster, Sebastian, Berwian, Patrick, Friedrich, Jochen, Danilewsky, Andreas N.

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Doping induced lattice misfit in 4H–SiC homoepitaxy von Kallinger, Birgit, Berwian, Patrick, Friedrich, Jochen, Müller, Georg, Weber, Arnd-Dietrich, Volz, Eduard, Trachta, Gerd, Spiecker, Erdmann, Thomas, Bernd

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Step-controlled homoepitaxial growth of 4H–SiC on vicinal substrates von Kallinger, Birgit, Berwian, Patrick, Friedrich, Jochen, Thomas, Bernd

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Scalable Quantum Memory Nodes Using Nuclear Spins in Silicon Carbide von Parthasarathy, Shravan Kumar, Kallinger, Birgit, Kaiser, Florian, Berwian, Patrick, Dasari, Durga B.R., Friedrich, Jochen, Nagy, Roland

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Optical Stressing of 4H-SiC Material and Devices von Friedrich, Jochen, Berwian, Patrick, Kallinger, Birgit, Kaminzky, Daniel, Oppel, Steffen

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Minority Carrier Lifetime Measurements on 4H-SiC Epiwafers by Time-Resolved Photoluminescence and Microwave Detected Photoconductivity von Beyer, Jan, Schüler, Nadine, Erlekampf, Jürgen, Berwian, Patrick, Kallinger, Birgit, Heitmann, Johannes, Dornich, Kay

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Modelling of Effective Minority Carrier Lifetime in 4H-SiC n-Type Epilayers von Kallinger, Birgit, Friedrich, Jochen, Rommel, Mathias, Kaminzky, Daniel, Berwian, Patrick

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Influence of Substrate Properties on the Defectivity and Minority Carrier Lifetime in 4H-SiC Homoepitaxial Layers von Stockmeier, Matthias, Berwian, Patrick, Kallinger, Birgit, Vogel, Michael, Hens, Philip, Rosshirt, Katharina, Wischmeyer, Frank, Erlekampf, Jürgen

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Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC von Frey, Lothar, Friedrich, Jochen, Erlekampf, Jürgen, Rommel, Mathias, Berwian, Patrick, Rosshirt, Katharina, Kallinger, Birgit, Kaminzky, Daniel

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Step-controlled homoepitaxial growth of 4HaSiC on vicinal substrates von Kallinger, Birgit, Berwian, Patrick, Friedrich, Jochen, Thomas, Bernd

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HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices von Friedrich, Jochen, Berwian, Patrick, Rommel, Mathias, Kallinger, Birgit, Ehlers, Christian

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Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA von Bär, Eberhard, Kallinger, Birgit, Bayer, Christoph Friedrich, Berwian, Patrick

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Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC von Friedrich, Jochen, Berwian, Patrick, Kallinger, Birgit, Azizi, Maral, Friedrichs, Peter, Rommel, Mathias, Hecht, Christian

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Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence von Kaminzky, Daniel, Berwian, Patrick, Kallinger, Birgit, Friedrich, Jochen, Schütz, Michael, Rosshirt, Katharina, Oppel, Steffen, Schneider, Adrian

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SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV von Friedrich, Jochen, Berwian, Patrick, Kallinger, Birgit, Friedrichs, Peter, Thomas, Bernd, Peters, Dethard, Hecht, Christian

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Doping induced lattice misfit in 4HaSiC homoepitaxy von Kallinger, Birgit, Berwian, Patrick, Friedrich, Jochen, Muller, Georg, Weber, Arnd-Dietrich, Volz, Eduard, Trachta, Gerd, Spiecker, Erdmann, Thomas, Bernd

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4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions von Friedrich, Jochen, Berwian, Patrick, Trachta, Gerd, Kallinger, Birgit, Weber, Arnd Dietrich, Thomas, Bernd

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