Valence band anticrossing in GaBixAs1−x von Alberi, K., Dubon, O. D., Walukiewicz, W., Yu, K. M., Bertulis, K., Krotkus, A.

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GaBiAs: A material for optoelectronic terahertz devices von Bertulis, K., Krotkus, A., Aleksejenko, G., Pačebutas, V., Adomavičius, R., Molis, G., Marcinkevičius, S.

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Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique von Nargelas, S., Jarašiūnas, K., Bertulis, K., Pačebutas, V.

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Molecular-beam-epitaxy grown GaBiAs for terahertz optoelectronic applications von Pačebutas, V., Bertulis, K., Aleksejenko, G., Krotkus, A.

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Optoelectronic terahertz radiation system based on femtosecond 1 μm laser pulses and GaBiAs detector von PACEBUTAS, V, BICIUNAS, A, BERTULIS, K, KROTKUS, A

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Characterization of low-temperature molecular-beam-epitaxy grown GaBiAs layers von Pačebutas, V, Bertulis, K, Dapkus, L, Aleksejenko, G, Krotkus, A, Yu, K M, Walukiewicz, W

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Terahertz time-domain spectroscopy system based on femtosecond Yb:KGW laser von MOLIS, G, ADOMAVICIUS, R, KROTKUS, A, BERTULIS, K, GINIUNAS, L, POCIUS, J, DANIELIUS, R

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Growth and characterization of GaBiAs epilayers von Pačebutas, V., Bertulis, K., Aleksejenko, G., Adomavičius, R., Molis, G., Krotkus, A.

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Terahertz radiation from n -type GaAs with Be-doped low-temperature-grown GaAs surface layers von Liu, Kai, Krotkus, Arunas, Bertulis, K., Xu, Jingzhou, Zhang, X.-C.

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Hole trapping time measurement in low-temperature-grown gallium arsenide von Adomavičius, R., Krotkus, A., Bertulis, K., Sirutkaitis, V., Butkus, R., Piskarskas, A.

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Terahertz radiation emitters and detectors von Geižutis, A., Krotkus, A., Bertulis, K., Molis, G., Adomavičius, R., Urbanowicz, A., Balakauskas, S., Valaika, S.

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Ultrafast carrier trapping in Be-doped low-temperature-grown GaAs von Krotkus, A., Bertulis, K., Dapkus, L., Olin, U., Marcinkevičius, S.

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Terahertz emission from the structures containing low-temperature-grown GaAs layers von Krotkus, A, Bertulis, K, Liu, Kai, Xu, J, Zhang, X-C

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On the properties of the Be-doped low temperature molecular beam epitaxy GaAs layers von Kowalski, G., Frymark, I., Krotkus, A., Bertulis, K., Kaminska, M.

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Subpicosecond carrier lifetimes in GaAs grown by molecular beam epitaxy at low substrate temperature von Krotkus, A., Viselga, R., Bertulis, K., Jasutis, V., Marcinkevičius, S., Olin, U.

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Low-Temperature MBE Grown GaAs for Pulsed THz Radiation Applications von Adomavičius, R., Balakauskas, S., Bertulis, K., Geižutis, A., Molis, G., Krotkus, A.

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Hole tunnelling from beryllium acceptors in GaAs von Dargys, A, Zurauskiene, N, Bertulis, K

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Optoelectronic terahertz radiation system based on femtosecond 1 µm laser pulses and GaBiAs detector von Pacebutas, V, Biciunas, A, Bertulis, K, Krotkus, A

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Optoelectronic terahertz radiation system based on femtosecond 1 µm laser pulses and GaBiAs detector von Pačebutas, V., Bičiu̅nas, A., Bertulis, K., Krotkus, A.

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Optoelectronic terahertz radiation system based on femtosecond 1 mu m laser pulses and GaBiAs detector von Pacebutas, V, Biciunas, A, Bertulis, K, Krotkus, A

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