Stability of sign patterns from a system of second order ODEs von Berliner, Adam H., Catral, Minerva, Olesky, D.D., van den Driessche, P.

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Refined inertias of positive and hollow positive patterns von Berliner, Adam H., Catral, Minerva, Olesky, D. D., van den Driessche, P.

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Sets of refined inertias of zero–nonzero patterns von Berliner, Adam H., Olesky, D.D., van den Driessche, P.

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Inertias of matrices and sign patterns related to a system of second order ODEs von Berliner, Adam H., Catral, Minerva, Olesky, D.D., van den Driessche, P.

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Relations between classes of potentially stable sign patterns von Berliner, Adam, Olesky, Dale D., Van den Driessche, Pauline

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Inertia sets allowed by matrix patterns von Berliner, Adam, Olesky, Dale, Van den Driessche, Pauline

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Inertia sets allowed by matrix patterns von Berliner, Adam H, Olesky, Dale D, van den Driessche, Pauline

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Coprime and prime labelings of graphs von Berliner, Adam H, Dean, Nathaniel, Hook, Jonelle, Marr, Alison, Mbirika, Aba, McBee, Cayla D

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Coprime and prime labelings of graphs von Berliner, Adam H, Dean, Nathaniel, Hook, Jonelle, Marr, Alison, Mbirika, Aba, McBee, Cayla D

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Microbial biomanufacturing for space-exploration—what to take and when to make von Averesch, Nils J. H., Berliner, Aaron J., Nangle, Shannon N., Zezulka, Spencer, Vengerova, Gretchen L., Ho, Davian, Casale, Cameran A., Lehner, Benjamin A. E., Snyder, Jessica E., Clark, Kevin B., Dartnell, Lewis R., Criddle, Craig S., Arkin, Adam P.

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Side-to-End Hypoglossal to Facial Anastomosis With Transposition of the Intratemporal Facial Nerve von Slattery, William H, Cassis, Adam M, Wilkinson, Eric P, Santos, Felipe, Berliner, Karen

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Zero forcing propagation time on oriented graphs von Berliner, Adam, Bozeman, Chassidy, Butler, Steve, Catral, Minerva, Hogben, Leslie, Kroschel, Brenda, Lin, Jephian C.-H., Warnberg, Nathan, Young, Michael

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Space bioprocess engineering on the horizon von Berliner, Aaron J., Lipsky, Isaac, Ho, Davian, Hilzinger, Jacob M., Vengerova, Gretchen, Makrygiorgos, Georgios, McNulty, Matthew J., Yates, Kevin, Averesch, Nils J. H., Cockell, Charles S., Wallentine, Tyler, Seefeldt, Lance C., Criddle, Craig S., Nandi, Somen, McDonald, Karen A., Menezes, Amor A., Mesbah, Ali, Arkin, Adam P.

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ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08µm2 SRAM cell von Cheng, K., Khakifirooz, A., Kulkarni, P., Ponoth, S., Haran, B., Kumar, A., Adam, T., Reznicek, A., Loubet, N., He, H., Kuss, J., Wang, M., Levin, T. M., Monsieur, F., Liu, Q., Sreenivasan, R., Cai, J., Kimball, A., Mehta, S., Luning, S., Zhu, Y., Zhu, Z., Yamamoto, T., Bryant, A., Lin, C., Naczas, S., Jagannathan, H., Edge, L. F., Allegret-Maret, S., Dube, A., Kanakasabapathy, S., Schmitz, S., Inada, A., Seo, S., Raymond, M., Zhang, Z., Yagishita, A., Demarest, J., Li, J., Hopstaken, M., Berliner, N., Upham, A., Johnson, R., Holmes, S., Standaert, T., Smalley, M., Zamdmer, N., Ren, Z., Wu, T., Bu, H., Paruchuri, V., Sadana, D., Narayanan, V., Haensch, W., O'Neill, J., Hook, T., Khare, M., Doris, B.

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Positionspapier der Berlin-Brandenburgischen Chirurgischen Gesellschaft – zur Zukunft der chirurgischen Weiterbildung von Hillebrandt, Karl H., Dobrindt, Eva, Krenzien, Felix, Moosburner, Simon, Pratschke, Johann

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ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08µm2 SRAM cell von Cheng, K., Khakifirooz, A., Kulkarni, P., Ponoth, S., Haran, B., Kumar, A., Adam, T., Reznicek, A., Loubet, N., He, H., Kuss, J., Wang, M., Levin, T. M., Monsieur, F., Liu, Q., Sreenivasan, R., Cai, J., Kimball, A., Mehta, S., Luning, S., Zhu, Y., Zhu, Z., Yamamoto, T., Bryant, A., Lin, C., Naczas, S., Jagannathan, H., Edge, L. F., Allegret-Maret, S., Dube, A., Kanakasabapathy, S., Schmitz, S., Inada, A., Seo, S., Raymond, M., Zhang, Z., Yagishita, A., Demarest, J., Li, J., Hopstaken, M., Berliner, N., Upham, A., Johnson, R., Holmes, S., Standaert, T., Smalley, M., Zamdmer, N., Ren, Z., Wu, T., Bu, H., Paruchuri, V., Sadana, D., Narayanan, V., Haensch, W., O'Neill, J., Hook, T., Khare, M., Doris, B.

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22 nm technology compatible fully functional 0.1 μm2 6T-SRAM cell von Haran, B.S., Kumar, A., Adam, L., Chang, J., Basker, V., Kanakasabapathy, S., Horak, D., Fan, S., Chen, J., Faltermeier, J., Seo, S., Burkhardt, M., Burns, S., Halle, S., Holmes, S., Johnson, R., McLellan, E., Levin, T.M., Zhu, Y., Kuss, J., Ebert, A., Cummings, J., Canaperi, D., Paparao, S., Arnold, J., Sparks, T., Koay, C.S., Kanarsky, T., Schmitz, S., Petrillo, K., Kim, R.H., Demarest, J., Edge, L.F., Jagannathan, H., Smalley, M., Berliner, N., Cheng, K., LaTulipe, D., Koburger, C., Mehta, S., Raymond, M., Colburn, M., Spooner, T., Paruchuri, V., Haensch, W., McHerron, D., Doris, B.

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