Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures von Barletta, Philip T., Acar Berkman, E., Moody, Baxter F., El-Masry, Nadia A., Emara, Ahmed M., Reed, Mason J., Bedair, S. M.

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Strain relaxation in InxGa1-xN/GaN quantum well structures von Emar, Ahmed M., Berkman, E. Acar, Zavada, J., El-Masry, Nadia A., Bedair, S. M.

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Effect of O Impurity on the Properties of InGaN/GaN Multiple Quantum Well and Light Emitting Diode Structures von Li, Ying, Berkman, Erkan Acar, Stokes, E. B.

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Development of green, yellow, and amber light emitting diodesusing InGaN multiple quantum well structures von Barletta, Philip T., Acar Berkman, E., Moody, Baxter F., El-Masry, Nadia A., Emara, Ahmed M., Reed, Mason J., Bedair, S. M.

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Strain relaxation in In x Ga 1‐x N/GaN quantum well structures von Emar, Ahmed M., Berkman, E. Acar, Zavada, J., El‐Masry, Nadia A., Bedair, S. M.

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Fermi Level and Magnetic GaMnN Thin Films von El-Masry, Nadia A., Arkun, F. Erdem, Berkman, Acar, Mahrous, Amr, Zavada, John M., Bedair, Salah M.

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Development of Yellow and White LED's Using InGaN-based Multi-Quantum well Structures von Bedair, Salah M., Barletta, Phillip, Berkman, Acar, Emara, Ahmed, Reed, Mason, El-Masry, Nadia A., Moody, Baxter

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Fermi Level and Magnetic GaMnN Thin Films von EL-Masry, Nadia A., Arkun, F. Erdem, Berkman, Acar, Zavada, John, Bedair, Salah M.

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Development of Yellow and White LED's Using InGaN-based Multi-Quantum well Structures von Bedair, Salah M., Barletta, Phillip, Berkman, Acar, Emara, Ahmed, Reed, Mason, EL-Masry, Nadia A.

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