On-axis homoepitaxial growth on Si-face 4H–SiC substrates von Hassan, J., Bergman, J.P., Henry, A., Janzén, E.

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Characterization of the carrot defect in 4H-SiC epitaxial layers von Hassan, J., Henry, A., McNally, P.J., Bergman, J.P.

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In-situ surface preparation of nominally on-axis 4H-SiC substrates von Hassan, J., Bergman, J.P., Henry, A., Janzén, E.

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Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN von Buyanova, I.A, Bergman, J.P, Monemar, B, Amano, H, Akasaki, I, Wysmolek, A, Lomiak, P, Baranowski, J.M, Pakula, K, Stepniewski, R, Korona, K.P, Grzegory, I, Bockowski, M, Porowski, S

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Structural defect-related emissions in nonpolar a-plane GaN von Paskov, P.P., Schifano, R., Paskova, T., Malinauskas, T., Bergman, J.P., Monemar, B., Figge, S., Hommel, D.

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AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency von Shevchenko, E.A., Toropov, A.A., Nechaev, D.V., Jmerik, V.N., Shubina, T.V., Ivanov, S.V., Yagovkina, M.A., Pozina, G., Bergman, J.P., Monemar, B.

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Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile von Hassan, Jawad-ul, Henry, A., Bergman, J.P., Jensén, E.

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Electronic structure and temperature dependence of excitons in GaN von Monemar, B., Buyanova, I.A., Bergman, J.P., Amano, H., Akasaki, I.

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Growth of SiC by "Hot-Wall" CVD and HTCVD von Kordina, O., Hallin, C., Henry, A., Bergman, J. P., Ivanov, I., Ellison, A., Son, N. T., Janzén, E.

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High temperature CVD growth of SiC von Ellison, A., Zhang, J., Peterson, J., Henry, A., Wahab, Q., Bergman, J.P., Makarov, Y.N., Vorob’ev, A., Vehanen, A., Janzén, E.

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A hydrogen-related shallow donor in GaN? von Monemar, B., Paskov, P.P., Bergman, J.P., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.

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Ion implantation of silicon carbide von Hallén, A, Janson, M.S, Kuznetsov, A.Yu, Åberg, D, Linnarsson, M.K, Svensson, B.G, Persson, P.O, Carlsson, F.H.C, Storasta, L, Bergman, J.P, Sridhara, S.G, Zhang, Y

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Free Excitons in GaN von Monemar, B., Bergman, J.P., Buyanova, I.A., Li, W., Amano, H., Akasaki, I.

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Optical signatures of dopants in GaN von Monemar, B., Paskov, P.P., Bergman, J.P., Toropov, A.A., Shubina, T.V., Figge, S., Paskova, T., Hommel, D., Usui, A., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.

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High temperature behaviour of 3.5 kV 4H-SiC JBS diodes von Brosselard, P., Jorda, X., Vellvehi, M., Godignon, P., Bergman, J.P., Lambert, B.

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Carrier lifetimes in SiC, studied by time resolved photoluminescence spectroscopy von Bergman, J.P.

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The effect of the temperature on the Bipolar Degradation of 3.3 kV 4H-SiC PiN diodes von Brosselard, P., Tomas, A.P., Camara, N., Hassan, J., Jorda, X., Vellvehi, M., Godignon, P., Millan, J., Bergman, J.P.

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The 3.466 eV Bound Exciton in GaN von Monemar, B., Chen, W.M., Paskov, P.P., Paskova, T., Pozina, G., Bergman, J.P.

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Defects in 4H silicon carbide von Bergman, J.P., Storasta, L., Carlsson, F.H.C., Sridhara, S., Magnusson, B., Janze’n, E.

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Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant von Pozina, G, Bergman, J.P, Monemar, B, Yamaguchi, S, Amano, H, Akasaki, I

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