Properties of the main Mg-related acceptors in GaN from optical and structural studies von Monemar, B., Paskov, P. P., Pozina, G., Hemmingsson, C., Bergman, J. P., Khromov, S., Izyumskaya, V. N., Avrutin, V., Li, X., Morkoç, H., Amano, H., Iwaya, M., Akasaki, I.

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Evidence for two Mg related acceptors in GaN von Monemar, B, Paskov, P P, Pozina, G, Hemmingsson, C, Bergman, J P, Kawashima, T, Amano, H, Akasaki, I, Paskova, T, Figge, S, Hommel, D, Usui, A

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Deep levels created by low energy electron irradiation in 4H-SiC von Storasta, L., Bergman, J. P., Janzén, E., Henry, A., Lu, J.

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Recombination of free and bound excitons in GaN von Monemar, B., Paskov, P. P., Bergman, J. P., Toropov, A. A., Shubina, T. V., Malinauskas, T., Usui, A.

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Real-world diagnostic potential of bacterial biomarkers of canine periodontitis von Wallis, C V, Soltero-Rivera, M, Harvey, C, Reynolds, R M, Carvell-Miller, L J, Colyer, A, McKee, T S, Mills, T, Bergman, P J, Watson, P, Holcombe, L J

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Development of a xenogeneic DNA vaccine program for canine malignant melanoma at the Animal Medical Center von Bergman, P.J., Camps-Palau, M.A., McKnight, J.A., Leibman, N.F., Craft, D.M., Leung, C., Liao, J., Riviere, I., Sadelain, M., Hohenhaus, A.E., Gregor, P., Houghton, A.N., Perales, M.A., Wolchok, J.D.

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Characterization of the carrot defect in 4H-SiC epitaxial layers von Hassan, J., Henry, A., McNally, P.J., Bergman, J.P.

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On-axis homoepitaxial growth on Si-face 4H–SiC substrates von Hassan, J., Bergman, J.P., Henry, A., Janzén, E.

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In-situ surface preparation of nominally on-axis 4H-SiC substrates von Hassan, J., Bergman, J.P., Henry, A., Janzén, E.

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Electrically active defects in n -type 4H–silicon carbide grown in a vertical hot-wall reactor von Zhang, J., Storasta, L., Bergman, J. P., Son, N. T., Janzén, E.

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Delay and distortion of slow light pulses by excitons in ZnO von Shubina, T. V., Glazov, M. M., Gippius, N. A., Toropov, A. A., Lagarde, D., Disseix, P., Leymarie, J., Gil, B., Pozina, G., Bergman, J. P., Monemar, B.

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Deep level defects in electron-irradiated 4H SiC epitaxial layers von Hemmingsson, C., Son, N. T., Kordina, O., Bergman, J. P., Janzén, E., Lindström, J. L., Savage, S., Nordell, N.

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Schottky versus bipolar 3.3 kV SiC diodes von Pérez-Tomás, A, Brosselard, P, Hassan, J, Jordà, X, Godignon, P, Placidi, M, Constant, A, Millán, J, Bergman, J P

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Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy von Buyanova, I. A., Chen, W. M., Pozina, G., Bergman, J. P., Monemar, B., Xin, H. P., Tu, C. W.

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Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC von Kamiyama, S., Maeda, T., Nakamura, Y., Iwaya, M., Amano, H., Akasaki, I., Kinoshita, H., Furusho, T., Yoshimoto, M., Kimoto, T., Suda, J., Henry, A., Ivanov, I. G., Bergman, J. P., Monemar, B., Onuma, T., Chichibu, S. F.

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Canine Hepatic Neuroendocrine Carcinoma: An Immunohistochemical and Electron Microscopic Study von Patnaik, A. K, Newman, S. J, Scase, T, Erlandson, R. A, Antonescu, C, Craft, D, Bergman, P. J

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Recent developments in the III-nitride materials von Monemar, B., Paskov, P. P., Bergman, J. P., Toropov, A. A., Shubina, T. V.

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Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift von Brosselard, P, Pérez-Tomás, A, Hassan, J, Camara, N, Jordà, X, Vellvehí, M, Godignon, P, Millán, J, Bergman, J P

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The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique von Neimontas, K, Malinauskas, T, Aleksiejūnas, R, Sūdžius, M, Jarašiūnas, K, Storasta, L, Bergman, J P, Janzen, E

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Luminescence from stacking faults in 4H SiC von Sridhara, S. G., Carlsson, F. H. C., Bergman, J. P., Janzén, E.

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