Growth and self-organization of SiGe nanostructures von Aqua, J.-N., Berbezier, I., Favre, L., Frisch, T., Ronda, A.

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SiGe nanostructures von Berbezier, I., Ronda, A.

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Fabrication of spectrally sharp Si-based dielectric resonators: combining etaloning with Mie resonances von Toliopoulos, D., Khoury, M., Bouabdellaoui, M., Granchi, N., Claude, J-B, Benali, A., Berbezier, Hannani, D., Ronda, A., Wenger, J., Bollani, M., Gurioli, M., Sanguinetti, S., Intonti, F., Abbarchi, M.

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Geometrically induced electron-electron interaction in semiconductor nanowires von Pinto, N., Rezvani, S. J., Favre, L., Berbezier, I., Fretto, M., Boarino, L.

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The kinetics of dewetting ultra-thin Si layers from silicon dioxide von Aouassa, M, Favre, L, Ronda, A, Maaref, H, Berbezier, I

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Fabrication of MIS photodetector with Ge nanocrystals grown by MBE von Aouassa, M., M’gaieth, R., Azeza, B., Berbezier, I., Favre, L.

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High graphene permeability for room temperature silicon deposition: The role of defects von Ronci, F., Colonna, S., Flammini, R., De Crescenzi, M., Scarselli, M., Salvato, M., Berbezier, I., Jardali, F., Lechner, C., Pochet, P., Vach, H., Castrucci, P.

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Scanning tunneling microscopy and Raman evidence of silicene nanosheets intercalated into graphite surfaces at room temperature von Kupchak, I, Fabbri, F, De Crescenzi, M, Scarselli, M, Salvato, M, Delise, T, Berbezier, I, Pulci, O, Castrucci, P

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Ordered arrays of Si and Ge nanocrystals via dewetting of pre-patterned thin films von Berbezier, I., Aouassa, M., Ronda, A., Favre, L., Bollani, M., Sordan, R., Delobbe, A., Sudraud, P.

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Ordered arrays of Au catalysts by FIB assisted heterogeneous dewetting von Benkouider, A, Ronda, A, David, T, Favre, L, Abbarchi, M, Naffouti, M, Osmond, J, Delobbe, A, Sudraud, P, Berbezier, I

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Charge trapping properties of Ge nanocrystals grown via solid-state dewetting von Jadli, I., Aouassa, M., Johnston, S., Maaref, H., Favre, L., Ronda, A., Berbezier, I., M'ghaieth, R.

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Role of quantum confinement in luminescence efficiency of group IV nanostructures von Barbagiovanni, E. G., Lockwood, D. J., Rowell, N. L., Costa Filho, R. N., Berbezier, I., Amiard, G., Favre, L., Ronda, A., Faustini, M., Grosso, D.

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Role of surface passivation on visible and infrared emission of Ge quantum dots formed by dewetting von Aouassa, M, Zrir, M A, Jadli, I, Hassayoun, L S, Mghaieth, R, Maaref, H, Favre, L, Ronda, A, Berbezier, I

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Diffusion induced effects on geometry of Ge nanowires von Rezvani, S. J, Pinto, N, Boarino, L, Celegato, F, Favre, L, Berbezier, I

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Investigation of microstructure and morphology for the Ge on porous silicon/Si substrate hetero-structure obtained by molecular beam epitaxy von Gouder, S., Mahamdi, R., Aouassa, M., Escoubas, S., Favre, L., Ronda, A., Berbezier, I.

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Selective growth and ordering of SiGe nanowires for band gap engineering von Benkouider, A, Ronda, A, Gouyé, A, Herrier, C, Favre, L, Lockwood, D J, Rowell, N L, Delobbe, A, Sudraud, P, Berbezier, I

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Ultra-thin planar fully relaxed Ge pseudo-substrate on compliant porous silicon template layer von Aouassa, M., Escoubas, S., Ronda, A., Favre, L., Gouder, S., Mahamdi, R., Arbaoui, E., Halimaoui, A., Berbezier, I.

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Ultimate nanopatterning of Si substrate using filtered liquid metal alloy ion source-focused ion beam von Benkouider, A., Berbezier, I., Ronda, A., Favre, L., Gomes, E. Ruiz, Marcus, I.C., Alonso, I., Delobbe, A., Sudraud, P.

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SiGe nanostructures: new insights into growth processes von Berbezier, I, Ronda, A, Portavoce, A

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Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111) von Lockwood, D J, Rowell, N L, Benkouider, A, Ronda, A, Favre, L, Berbezier, I

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