Influence of the additional p+ doped layers on the properties of AlGaAs/InGaAs/AlGaAs heterostructures for high power SHF transistors von Gulyaev, D V, Zhuravlev, K S, Bakarov, A K, Toropov, A I, Yu Protasov, D, Gutakovskii, A K, Ya Ber, B, Yu Kazantsev, D

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Characteristics of double-cascade photodiodes based on p-i-n AlGaAs/GaAs diodes connected by n++-GaAs/i-GaAs/i-AlGaAs/p++-AlGaAs tunnel diodes von Kontrosh, E V, Kalinovskii, V S, Klimko, G V, Vaulin, N V, Ya Ber, B

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Quantification of Hydrogen in Natural Diamond by Secondary Ion Mass Spectrometry (SIMS) von Kaminsky, F. V., Shilobreeva, S. N., Ber, B. Ya, Kazantsev, D. Yu

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Origin of Green Coloration in AlN Crystals Grown on SiC Seeds von Nagalyuk, S. S., Mokhov, E. N., Kazarova, O. P., Ber, B. Y., Anisimov, A. A., Breev, I. D.

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Radiation-stimulated photoluminescence in electron irradiated 4H-SiC von Lebedev, A A, Ber, B Ya, Seredova, N V, Kazantsev, D Yu, Kozlovski, V V

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Influence of Source Composition on the Planar Growth of Nanowires during Catalytic Growth in a Quasi-Closed Volume von Karlina, L. B., Vlasov, A. S., Smirnova, I. P., Ber, B. Ya, Kazantsev, D. Yu, Tokarev, M. V., Soshnikov, I. P.

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Current—voltage characteristics of connecting tunnel diodes at temperature heating up to 80°C von Kontrosh, E V, Klimko, G V, Kalinovskii, V S, Yuferev, V S, Vaulin, N V, Ya Ber, B

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Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation von Kalinovskii, V. S., Kontrosh, E. V., Klimko, G. V., Ivanov, S. V., Yuferev, V. S., Ber, B. Y., Kazantsev, D. Y., Andreev, V. M.

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Study of load-bearing timber-wall elements using experimental testing and mathematical modelling von Premrov, M., Ber, B., Silih, Kozem E.

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Obtaining Anisotypic Heterostructures for a GaSb-Based Photovoltaic Converter Due to Solid-Phase Substitution Reactions von Gagis, G. S., Kuchinskii, V. I., Kazantsev, D. Yu, Ber, B. Ya, Tokarev, M. V., Khvostikov, V. P., Nakhimovich, M. V., Vlasov, A. S., Vasil’ev, V. I.

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Diffusion of zinc in gallium arsenide with the participation isovalent impurities von Karlina, L.B., Vlasov, A.S., Ber, B.Y., Kazantsev, D.Y.

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Effect of growth conditions at MOCVD on thickness uniformity of GaInAsP epilayers obtained on InP von Marichev, A E, Levin, R V, Pushnyii, B V, Gagis, G S, Vasil'ev, I V, Scheglov, M P, Kazantsev, D Yu, Ber, B Ya, Popova, T B, Marukhina, E P

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Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice von Babichev, A. V., Pirogov, E. V., Sobolev, M. S., Denisov, D. V., Fominykh, H. A., Baranov, A. I., Gudovskikh, A. S., Melnichenko, I. A., Yunin, P. A., Nevedomsky, V. N., Tokarev, M. V., Ber, B. Ya, Gladyshev, A. G., Karachinsky, L. Ya, Novikov, I. I., Egorov, A. Yu

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Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers von Osinnykh, I. V., Malin, T. V., Kozhukhov, A. S., Ber, B. Ya, Kazancev, D. Yu, Zhuravlev, K. S.

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Obtaining of Nanoscale Layers of Solid Solutions in GaSb, GaAs, InAs Wafers Because of Solid-Phase Substitution Reactions von Vasil’ev, V. I., Gagis, G. S., Ber, B. Ya, Kazantsev, D. Yu, Tokarev, M. V., Kuchinskii, V. I., Nakhimovich, M. V., Khvostikov, V. P.

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Zn diffusion technology for InP-InGaAs avalanche photodiodes von Andryushkin, V V, Gladyshev, A G, Babichev, A V, Kolodeznyi, E S, Novikov, I I, Ya Karachinsky, L, Maleev, N A, Khvostikov, V P, Ya Ber, B, Kuzmenkov, A G, Kizhaev, S S, Bougrov, V E

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The Effect of Liquid Silicon on the AlN Crystal Growth von Anisimov, A. N., Breev, I. D., Likhachev, K. V., Kazarova, O. P., Nagalyuk, S. S., Baranov, P. G., Ber, B. Ya, Kazantcev, D. Yu, Scheglov, M. P., Mokhov, E. N.

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Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN:Si layers von Osinnykh, I V, Malin, T V, Plyusnin, V F, Zhuravlev, K S, Ber, B Ya, Kazantsev, D Yu

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Globus-M plasma physics research for fusion application and compact neutron source development von Gusev, V K, Bakharev, N N, Ber, B Ya, Bulanin, V V, Chernyshev, F V, Dyachenko, V V, Goncharov, P R, Gusakov, E Z, Iblyaminova, A D, Irzak, M A, Kaveeva, E G, Khitrov, S A, Khromov, N A, Kornev, V A, Kurskiev, G S, Melnik, A D, Minaev, V B, Mineev, A B, Mironov, M I, Novokhatsky, A N, Patrov, M I, Petrov, A V, Petrov, Yu V, Rozhansky, V A, Sakharov, N V, Saveliev, A N, Senichenkov, I Yu, Shchegolev, P B, Shcherbinin, O N, Tolstyakov, S Yu, Varfolomeev, V I, Voronin, A V, Yashin, A Yu

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Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques von Ber, B., Bábor, P., Brunkov, P.N., Chapon, P., Drozdov, M.N., Duda, R., Kazantsev, D., Polkovnikov, V.N., Yunin, P., Tolstogouzov, A.

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