Analysis of photoemission lines in silicon nitrided layers formed by low-energy nitrogen ion implantation in silicon von Benkherourou, O., Sahnoune, S., Djabi, M., Deville, J-P.

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Ar+ and He+-ion influence on Si2p and O1s atomic lines : an XPS study von BENKHEROUROU, O, DEVILLE, J. P

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X-ray Photoelectron Spectroscopy of silicon oxynitride layers obtained by low-energy ion implantation von Benkherourou, O., Deville, J. P.

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Ar + and He +-ion influence on Si 2p and O 1s atomic lines an XPS study von Benkherourou, O, Deville, JP

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XPS Sputter Depth Profiling Applid to the Analysis of Si/SiO2, Si/SiOxNy and Si/Si3N4 von Deville, J.P., Benkherourou, O.

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