Dual role of 3C-SiC interlayer on DC and RF isolation of GaN/Si-based devices von El Hadi Khediri, A., Benbakhti, B., Gerbedoen, J.-C., Maher, H., Jaouad, A., Bourzgui, N. E., Soltani, A.

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A cost-effective technology to improve power performance of nanoribbons GaN HEMTs von Soltani, A., Benbakhti, B., Gerbedoen, J.-C., Khediri, A., Maher, H., Salvestrini, J.-P., Ougazzaden, A., Bourzgui, N. E., Barkad, H. A.

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A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs von Duffy, S. J., Benbakhti, B., Zhang, W., Ahmeda, K., Kalna, K., Boucherta, M., Mattalah, M., Chahdi, H. O., Bourzgui, N. E., Soltani, A.

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Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices von Benbakhti, B., Soltani, A., Kalna, K., Rousseau, M., De Jaeger, J.-C.

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Characterization of Electron Traps in Si-Capped Ge MOSFETs With HfO2/SiO2 Gate Stack von BENBAKHTI, B, ZHANG, J. F, JI, Z, ZHANG, W, MITARD, J, KACZER, B, GROESENEKEN, G, HALL, S, ROBERTSON, J, CHALKER, P

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Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures von Benbakhti, B., Ayubi-Moak, J.S., Kalna, K., Lin, D., Hellings, G., Brammertz, G., De Meyer, K., Thayne, I., Asenov, A.

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Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes von Barkad, H A, Soltani, A, Mattalah, M, Gerbedoen, J-C, Rousseau, M, De Jaeger, J-C, BenMoussa, A, Mortet, V, Haenen, K, Benbakhti, B, Moreau, M, Dupuis, R, Ougazzaden, A

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Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure von Ma, J., Zhang, J.F., Ji, Z., Benbakhti, B., Duan, M., Zhang, W., Zheng, X.F., Mitard, J., Kaczer, B., Groeseneken, G., Hall, S., Robertson, J., Chalker, P.

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Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs von AYUBI-MOAK, J, BENBAKHTI, B, KALNA, K, PATERSON, G. W, HILL, R, PASSLACK, M, THAYNE, I, ASENOV, A

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Analysis of Thermal Effect Influence in Gallium-Nitride-Based TLM Structures by Means of a Transport-Thermal Modeling von Benbakhti, B., Rousseau, M., Soltani, A., De Jaeger, J.C.

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Electron velocity decline in Si nanoscales MOSFETs with the shortening of gate length von Islam, A, Benbakhti, B, Kalna, K

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Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET von Chan, K.H., Benbakhti, B., Riddet, C., Watling, J.R., Asenov, A.

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Effect of interface state trap density on the performance of scaled surface channel In0.3Ga0.7 As MOSFETs von Benbakhti, B, Ayubi-Moak, J S, Kalna, K, Asenov, A

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Electron transport properties of gallium nitride for microscopic power device modelling von Benbakhti, B, Rousseau, M, Soltani, A, Jaeger, J-C De

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193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors von Soltani, A., Barkad, H. A., Mattalah, M., Benbakhti, B., De Jaeger, J.-C., Chong, Y. M., Zou, Y. S., Zhang, W. J., Lee, S. T., BenMoussa, A., Giordanengo, B., Hochedez, J.-F.

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Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns von Cordier, Y., Semond, F., Moreno, J-C., Frayssinet, E., Benbakhti, B., Cao, Z., Chenot, S., Nguyen, L., Tottereau, O., Soltani, A., Blary, K.

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Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate von Duffy, S. J., Benbakhti, B., Mattalah, M., Zhang, W., Bouchilaoun, M., Boucherta, M., Kalna, K., Bourzgui, N., Maher, H., Soltani, A.

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Monte Carlo Study of Ultimate Channel Scaling in Si and In Ga As Bulk MOSFETs von Islam, A., Benbakhti, B., Kalna, K.

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Simulation study of the 20nm gate-length Ge implant-free quantum well p-MOSFET von Chan, K.H., Benbakhti, B., Riddet, C., Watling, J.R., Asenov, A.

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Characterization of Electron Traps in Si-Capped Ge MOSFETs With \hbox/\hbox Gate Stack von Benbakhti, B., Zhang, J. F., Ji, Z., Zhang, W., Mitard, J., Kaczer, B., Groeseneken, G., Hall, S., Robertson, J., Chalker, P.

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