Study of silicon strain in shallow trench isolation von Belyansky, M., Klymko, N., Conti, R., Chidambarrao, D., Liu, F.

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Comparative analysis of biologic versus synthetic mesh outcomes in contaminated hernia repairs von Majumder, Arnab, MD, Winder, Joshua S., MD, Wen, Yuxiang, MD, Pauli, Eric M., MD, Belyansky, Igor, MD, Novitsky, Yuri W., MD

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Heteroepitaxy of Hafnium Diboride on a Hafnium(0001) Single Crystal Surface von Belyansky, Michael, Trenary, Michael

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Quantitative Electron Energy Loss Spectroscopy (EELS) Analysis of Flowable CVD Oxide for Shallow Trench Isolation of finFET Integration von Li, J., Bruley, J., Conti, R., Belyansky, M., Metha, S., Strane, J., Tai, L., Jiang, L., Demarest, J., Gaudiello, J., Zhu, Y., Grill, A.

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Formation of hydrogen bonded aggregates of aminomethylidyne on Pt(111) von Jentz, D., Mills, P., Celio, H., Belyansky, M., Trenary, M.

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Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress von Belyansky, M., Chace, M., Gluschenkov, O., Kempisty, J., Klymko, N., Madan, A., Mallikarjunan, A., Molis, S., Ronsheim, P., Wang, Y., Yang, D., Li, Y.

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Atomic Layer Deposition of Sidewall Spacers: Process, Equipment and Integration Challenges in State-of-the-Art Logic Technologies von Belyansky, Michael P., Conti, Richard, Khan, Shahrukh, Zhou, Xin, Klymko, Nancy R, Yao, Yiping, Madan, Anita, Tai, Leo, Flaitz, Philip, Ando, Takashi

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Germanium diffusion in lead telluride crystal von Yashina, L

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A prospective randomized double-blinded controlled trial evaluating indocyanine green fluorescence angiography on reducing wound complications in complex abdominal wall reconstruct... von Wormer, Blair A., MD, Huntington, Ciara R., MD, Ross, Samuel W., MD, MPH, Colavita, Paul D., MD, Lincourt, Amy E., PhD, Prasad, Tanushree, MA, Sing, Ronald F., DO, Getz, Stanley B., MD, Belyansky, Igor, MD, Heniford, B. Todd, MD, Augenstein, Vedra A., MD

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Chalcogen interdiffusion in PbSe/PbTe heterostructures von Belyansky, M.P., Gaskov, A.M., Strelkov, A.V.

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Diffusion of cadmium in lead telluride von Bobruiko, V.B., Kouznetzova, T.A., Belyansky, M.P., Gaskov, A.M.

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MAIN FEATURES OF THE ELECTROMAGNETIC FIELDS STRUCTURE GENERATED IN THE LOWER IONOSPHERE GROUND-LEVEL SOURCES. NUMERICAL RESULTS von Rybachek, S, Belyansky, M A

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High performance bulk planar 20nm CMOS technology for low power mobile applications von Huiling Shang, Jain, S., Josse, E., Alptekin, E., Nam, M. H., Kim, S. W., Cho, K. H., Kim, I., Liu, Y., Yang, X., Wu, X., Ciavatti, J., Kim, N. S., Vega, R., Kang, L., Meer, H. V., Samavedam, S., Celik, M., Soss, S., Utomo, H., Ramachandran, R., Lai, W., Sardesai, V., Tran, C., Kim, J. Y., Park, Y. H., Tan, W. L., Shimizu, T., Joy, R., Strane, J., Tabakman, K., Lalanne, F., Montanini, P., Babich, K., Kim, J. B., Economikos, L., Cote, W., Reddy, C., Belyansky, M., Arndt, R., Kwon, U., Wong, K., Koli, D., Levedakis, D., Lee, J. W., Muncy, J., Krishnan, S., Schepis, D., Chen, X., Kim, B. D., Tian, C., Linder, B. P., Cartier, E., Narayanan, V., Northrop, G., Menut, O., Meiring, J., Thomas, A., Aminpur, M., Park, S. H., Lee, K. Y., Kim, B. Y., Rhee, S. H., Hamieh, B., Srivastava, R., Koshy, R., Goldberg, C., Pallachalil, M., Chae, M., Ogino, A., Watanabe, T., Oh, M., Mallela, H., Codi, D., Malinge, P., Weybright, M., Mann, R., Mittal, A., Eller, M., Lian, S., Li, Y., Divakaruni, R., Bukofsky, S., Kim, J. D., Sudijono, J., Neumueller, W., Matsuoka, F., Sampson, R.

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MAIN FEATURES OF THE ELECTROMAGNETIC FIELDS STRUCTURE GENERATED IN THE LOWER IONOSPHERE BY LOW-FREQUENCY GROUND-LEVEL SOURCES von Rybachek, S, Belyansky, M A

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Blanket SMT With In Situ N2 Plasma Treatment on the langle hbox 100 rangle Wafer for the Low-Cost Low-Power Technology Application von Yuan, Jun, Chan, V, Rovedo, N, Sardesai, V, Kanike, N, Varadarajan, V, Yu, M, Ho Yang, Jong, Jeong, Y K, Kwon, O S, Belyansky, M P, Eller, M, Meng Lee, Yong, Cave, N, Shang, Huiling, Li, Ying, Divakaruni, R

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Structure of Heteroepitaxial Thin Films of Hafnium Diboride Grown on a Hf(0001) Surface As Determined by Scanning Tunneling Microscopy von Belyansky, Michael, Trenary, Michael

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Impact of hydrogen in capping layers on BTI degradation and recovery in high-κ replacement metal gate transistors von Jin, M., Tian, C. E., La Rosa, G., Uppal, S., Mcmahon, W., Kothari, H., Liu, Y., Cartier, E., Lai, W. L., Dasgupta, A., Polvino, S., Belyansky, M., Chen, A., Zhou, X., Madan, A., Yao, Y., Klymko, N., Narayanan, V.

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Comparison of the surface chemical reactivity of hafnium diboride and hafnium von Belyansky, Michael, Trenary, Michael

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Performance elements for 28nm gate length bulk devices with gate first high-k metal gate von Yuan, J, Gruensfelder, C, Lim, K Y, Wallner, T, Jung, M K, Sherony, M J, Lee, Y M, Chen, J, Lai, C W, Chow, Y T, Stein, K, Song, L Y, Onoda, H, An, C W, Wang, H, Moon, B K, Kim, J, Inokuma, H, Yamasaki, H, Shah, J, Meer, H V, Samavedam, S B, Zhang, Q T, Zhu, C, Park, Y, Lim, Y E, Nieuwenhuizen, R, Han, J P, Hamaguchi, M, Lai, W L, Belyansky, M P, Gluschenkov, O, Johnson, S, Divakaruni, R, Kaste, E F, Sudijono, J, Ku, J H, Matsuoka, F, Neumueller, W, Sampson, R, Sekine, M, Steegen, A

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Influence of the boundary on the interdiffusion in heterostructures von Belyansky, M.P., Gaskov, A.M., Rumyantseva, M.N., Strelkov, A.V.

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