Noise characterization of metal-single molecule contacts von Xiang, D., Sydoruk, V., Vitusevich, S., Petrychuk, M. V., Offenhäusser, A., Kochelap, V. A., Belyaev, A. E., Mayer, D.

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Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods von Vitusevich, S., Nasieka, I.M., Naumov, A. V., Kalyuzhnyi, V. V., Liubchenko, O. I., Antypov, I. O., Boyko, M. I., Belyaev, A. E.

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Improvement of interface properties of AlGaN/GaN heterostructures under gamma-radiation von Vitusevich, S.A., Kurakin, A.M., Konakova, R.V., Belyaev, A.E., Klein, N.

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Depth profiling of strain and carrier concentration by cleaved surface scanning of GaN Gunn-diode: confocal Raman microscopy von Belyaev, A E, Strelchuk, V V, Nikolenko, A S, Romanyuk, A S, Mazur, Yu I, Ware, M E, DeCuir, E A, Salamo, G J

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Influence of template type and buffer strain on structural properties of GaN multilayer quantum wells grown by PAMBE, an x-ray study von Kladko, V P, Kuchuk, A V, Safryuk, N V, Machulin, V F, Lytvyn, P M, Raicheva, V G, Belyaev, A E, Mazur, Yu I, Jr, E A DeCuir, Ware, M E, Manasreh, M O, Salamo, G J

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Structure and electronic properties of biomorphic carbon matrices and SiC ceramics prepared on their basis von Konchits, А. A., Shanina, B. D., Krasnovyd, S. V., Yukhymchuk, V. O., Hreshchuk, O. M., Valakh, M. Ya, Skoryk, M. A., Kulinich, S. A., Belyaev, A. E., Iarmolenko, D. A.

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Biomorphous SiC ceramics prepared from cork oak as precursor von Yukhymchuk, V.O., Kiselov, V.S., Valakh, M.Ya, Tryus, M.P., Skoryk, M.A., Rozhin, A.G., Kulinich, S.A., Belyaev, A.E.

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Resistance formation mechanisms for contacts to n -GaN and n -AlN with high dislocation density von Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Zhilyaev, Yu. V., Klad'ko, V. P., Konakova, R. V., Kudryk, Ya. Ya, Panteleev, V. N., Sheremet, V. N.

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Electronic edge-state and space-charge phenomena in long GaN nanowires and nanoribbons von Sydoruk, V A, Zadorozhnyi, I, Hardtdegen, H, Lüth, H, Petrychuk, M V, Naumov, A V, Korotyeyev, V V, Kochelap, V A, Belyaev, A E, Vitusevich, S A

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Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction von Kuchuk, A. V., Stanchu, H. V., Li, Chen, Ware, M. E., Mazur, Yu. I., Kladko, V. P., Belyaev, A. E., Salamo, G. J.

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On a New Mechanism for the Realization of Ohmic Contacts von Sachenko, A. V., Belyaev, A. E., Konakova, R. V.

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Mechanism of strain-influenced quantum well thickness reduction in GaN AlN short-period superlattices von Kuchuk, A V, Kladko, V P, Petrenko, T L, Bryksa, V P, Belyaev, A E, Mazur, Yu I, Ware, M E, DeCuir, E A, Salamo, G J

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Aluminium nitride–niobium multilayers and free-standing structures for MEMS von Danylyuk, S.V., Ott, R., Panaitov, G., Pickartz, G., Hollmann, E., Vitusevich, S.A., Belyaev, A.E., Klein, N.

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Modelling of X-ray diffraction curves for GaN nanowires on Si(111) von Kladko, V.P., Kuchuk, А.V., Stanchu, H.V., Safriuk, N.V., Belyaev, A.E., Wierzbicka, A., Sobanska, M., Klosek, K., Zytkiewicz, Z.R.

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High-field quasi-ballistic transport in AlGaN/GaN heterostructures von Danilchenko, B. A., Tripachko, N. A., Belyaev, A. E., Vitusevich, S. A., Hardtdegen, H., Lüth, H.

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Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels von Vitusevich, S. A., Danylyuk, S. V., Klein, N., Petrychuk, M. V., Avksentyev, A. Yu, Sokolov, V. N., Kochelap, V. A., Belyaev, A. E., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

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Mechanism of contact resistance formation in ohmic contacts with high dislocation density von Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Konakova, R. V., Kudryk, Ya Ya, Novitskii, S. V., Sheremet, V. N., Li, J., Vitusevich, S. A.

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Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures von Kurakin, A. M., Vitusevich, S. A., Danylyuk, S. V., Hardtdegen, H., Klein, N., Bougrioua, Z., Naumov, A. V., Belyaev, A. E.

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The effect of small addition of copper on the growth process, structure, surface charge and adsorption properties of ZnO films in the pyrolysis of dithiocarbamates von Snopok, B. A, Zavyalova, L. V, Tatyanenko, N. P, Gudymenko, A. I, Svechnikov, G. S, Kladko, V. P, Belyaev, A. E

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Effects of γ-irradiation on AlGaN/GaN-based HEMTs von Vitusevich, S. A., Klein, N., Belyaev, A. E., Danylyuk, S. V., Petrychuk, M. V., Konakova, R. V., Kurakin, A. M., Rengevich, A. E., Avksentyev, A. Yu, Danilchenko, B. A., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

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