Noise-assisted persistence and recovery of memory state in a memristive spiking neuromorphic network von Surazhevsky, I.A., Demin, V.A., Ilyasov, A.I., Emelyanov, A.V., Nikiruy, K.E., Rylkov, V.V., Shchanikov, S.A., Bordanov, I.A., Gerasimova, S.A., Guseinov, D.V., Malekhonova, N.V., Pavlov, D.A., Belov, A.I., Mikhaylov, A.N., Kazantsev, V.B., Valenti, D., Spagnolo, B., Kovalchuk, M.V.

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Stochastic resonance in a metal-oxide memristive device von Mikhaylov, A.N., Guseinov, D.V., Belov, A.I., Korolev, D.S., Shishmakova, V.A., Koryazhkina, M.N., Filatov, D.O., Gorshkov, O.N., Maldonado, D., Alonso, F.J., Roldán, J.B., Krichigin, A.V., Agudov, N.V., Dubkov, A.A., Carollo, A., Spagnolo, B.

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Investigation of in vitro neuronal activity processing using a CMOS-integrated ZrO2(Y)-based memristive crossbar von Koryazhkina, M.N., Lebedeva, A.V., Pakhomova, D.D., Antonov, I.N., Razin, V.V., Budylina, E.D., Belov, A.I., Mikhaylov, A.N., Konakov, A.A.

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Yttria-stabilized zirconia cross-point memristive devices for neuromorphic applications von Emelyanov, A.V., Nikiruy, K.E., Demin, V.A., Rylkov, V.V., Belov, A.I., Korolev, D.S., Gryaznov, E.G., Pavlov, D.A., Gorshkov, O.N., Mikhaylov, A.N., Dimitrakis, P.

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A neurohybrid memristive system for adaptive stimulation of hippocampus von Gerasimova, S.A., Lebedeva, A.V., Fedulina, A., Koryazhkina, M., Belov, A.I., Mishchenko, M.A., Matveeva, M., Guseinov, D., Mikhaylov, A.N., Kazantsev, V.B., Pisarchik, A.N.

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Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise von Koryazhkina, M.N., Filatov, D.O., Shishmakova, V.A., Shenina, M.E., Belov, A.I., Antonov, I.N., Kotomina, V.E., Mikhaylov, A.N., Gorshkov, O.N., Agudov, N.V., Guarcello, C., Carollo, A., Spagnolo, B.

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Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing von Nikolskaya, A.A., Korolev, D.S., Trushin, V.N., Yunin, P.A., Mikhaylov, A.N., Belov, A.I., Konakov, A.A., Okulich, E.V., Pavlov, D.A., Tetelbaum, D.I.

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Photoluminescence of silicon at 1235 nm produced by irradiation of SiO2/Si with Kr+ ions and subsequent high-temperature annealing von Nikolskaya, A.A., Korolev, D.S., Mikhaylov, A.N., Konakov, A.A., Belov, A.I., Marychev, M.O., Murtazin, R.I., Pavlov, D.A., Tetelbaum, D.I.

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Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors von Tikhov, S.V., Mikhaylov, A.N., Belov, A.I., Korolev, D.S., Antonov, I.N., Karzanov, V.V., Gorshkov, O.N., Tetelbaum, D.I., Karakolis, P., Dimitrakis, P.

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Energy-saving technology of obtaining composite binders using technogenic wastes von Romanovich, A A, Romanovich, M A, Belov, A I, Chekhovskoy, E I

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Formation of Weighting Coefficients in an Artificial Neural Network Based on the Memristive Effect in Metal–Oxide–Metal Nanostructures von Antonov, I. N., Belov, A. I., Mikhaylov, A. N., Morozov, O. A., Ovchinnikov, P. E.

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Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by [Si.sup.+] Ion Implantation von Tereshchenko, A.N, Korolev, D.S, Mikhaylov, A.N, Belov, A.I, Nikolskaya, A.A, Pavlov, D.A, Tetelbaum, D.I, Steinman, E.A

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Simulation of synaptic coupling of neuron-like generators via a memristive device von Gerasimova, S. A., Mikhaylov, A. N., Belov, A. I., Korolev, D. S., Gorshkov, O. N., Kazantsev, V. B.

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Change of immitance during electroforming and resistive switching in the metal--insulator--metal memristive structures based on Si[O.sub.x] von Tikhov, S.V, Gorshkov, O.N, Antonov, I.N, Kasatkin, A.P, Korolev, D.S, Belov, A.I, Mikhaylov, A.N, Tetelbaum, D.I

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Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride von Korolev, D. S., Mikhaylov, A. N., Belov, A. I., Vasiliev, V. K., Guseinov, D. V., Okulich, E. V., Shemukhin, A. A., Surodin, S. I., Nikolitchev, D. E., Nezhdanov, A. V., Pirogov, A. V., Pavlov, D. A., Tetelbaum, D. I.

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Effect of ion doping on the dislocation-related photoluminescence in [Si.sup.+]-implanted silicon von Mikhaylov, A.N, Belov, A.I, Korolev, D.S, Timofeeva, A.O, Vasiliev, V.K, Shushunov, A.N, Bobrov, A.I, Pavlov, D.A, Tetelbaum, D.I, Shek, E.I

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Effect of carbon implantation on visible luminescence and composition of Si-implanted SiO2 layers von Tetelbaum, D.I., Mikhaylov, A.N., Vasiliev, V.K., Belov, A.I., Kovalev, A.I., Wainstein, D.L., Mendeleva, Yu.A., Finstad, T.G., Foss, S., Golan, Y., Osherov, A.

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Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation von Boryakov, A. V., Nikolitchev, D. E., Tetelbaum, D. I., Belov, A. I., Ershov, A. V., Mikhaylov, A. N.

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Effect of ion irradiation on the structure and luminescence characteristics of porous silicon impregnated with tungsten-telluride glass doped by Er and Yb impurities von Demidov, E. S., Karzanova, M. V., Mikhaylov, A. N., Tetelbaum, D. I., Belov, A. I., Korolev, D. S., Pavlov, D. A., Bobrov, A. I., Gorshkov, O. N., Demidova, N. E., Chigirinskii, Yu. I.

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Influence of the ion synthesis and ion doping regimes on the effect of sensitization of erbium emission by silicon nanoclusters in silicon dioxide films von Korolev, D. S., Kostyuk, A. B., Belov, A. I., Mikhaylov, A. N., Dudin, Yu. A., Bobrov, A. I., Malekhonova, N. V., Pavlov, D. A., Tetelbaum, D. I.

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