A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs von Zervos, Christos, Beleniotis, Petros, Rudolph, Matthias

Volltext

A Physics-Based Model for Slow Gate-Induced Electron Trapping in GaN HEMTs von Beleniotis, Petros, Krause, Sascha, Zervos, Christos, Rudolph, Matthias

Volltext

Investigation of Traps Impact on PAE and Linearity of AlGaN/GaN HEMTs Relying on a Combined TCAD-Compact Model Approach von Beleniotis, Petros, Zervos, Christos, Krause, Sascha, Chevtchenko, Serguei, Ritter, Dan, Rudolph, Matthias

Volltext

Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps‐Induced Drain Lag von Yazdani, Hossein, Zervos, Christos, Beleniotis, Petros, Brusaterra, Enrico, Hilt, Oliver, Rudolph, Matthias, Würfl, Joachim

Volltext

K/Ka‐Band–GaN–High‐Electron‐Mobility Transistors Technology with 700 mS mm −1 Extrinsic Transconductance von Yazdani, Hossein, Beleniotis, Petros, Brunner, Frank, Ostermay, Ina, Würfl, Joachim, Rudolph, Matthias, Heinrich, Wolfgang, Hilt, Oliver

Volltext

An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT von Beleniotis, Petros, Schnieder, Frank, Krause, Sascha, Haque, Sanaul, Rudolph, Matthias

Volltext

Investigation of thin InN/GaN heterostructures with in situ SiNx dielectric grown by plasma-assisted molecular beam epitaxy von Zervos, Christos, Adikimenakis, Adam, Beleniotis, Petros, Kostopoulos, Athanasios, Androulidaki, Maria, Tsagaraki, Katerina, Kayambaki, Maria, Konstantinidis, George, Georgakilas, Alexandros

Volltext