On the Suitability of 3C-Silicon Carbide as an Alternative to 4H-Silicon Carbide for Power Diodes von Arvanitopoulos, Anastasios E., Antoniou, Marina, Perkins, Samuel, Jennings, Mike, Guadas, Manuel Belanche, Gyftakis, Konstantinos N., Lophitis, Neophytos

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Sensitivity of Dit Extraction at the SiO2/SiC Interface Using Quasi-Static Capacitance-Voltage Measurements von Belanche Guadas, Manuel, Kumar, Piyush, Stark, Roger, Woerle, Judith, Grossner, Ulrike

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Small-Signal Impedance and Split C-V Characterization of High-κ SiC Power MOSFETs von Stark, Roger, Romano, Gianpaolo, Grossner, Ulrike, Race, Salvatore, Arango, Yulieth, Kovacevic-Badstuebner, Ivana, Tsibizov, Alexander, Belanche Guadas, Manuel, Knoll, Lars

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Minority Carrier Traps Induced by Neutron Reactions with 4H-SiC von Martinella, Corinna, Dorfer, Christian, Kumar, Piyush, Bathen, Marianne Etzelmüller, Grossner, Ulrike, Belanche Guadas, Manuel

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Energy-Dependent Impact of Proton Irradiation on 4H-SiC Schottky Diodes von Für, Natalija, Bathen, Marianne Etzelmüller, Grossner, Ulrike, Kumar, Piyush, Woerle, Judith, Guzenko, Luka, Belanche Guadas, Manuel

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Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology von Negri, Marco, Woerle, Judith, Belanche Guadas, Manuel, Grossner, Ulrike, Bonafe, Filippo, Lamontagne, Christopher, Nipoti, Roberta

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