Analysis of the Survivability of GaN Low-Noise Amplifiers von Rudolph, M., Behtash, R., Doerner, R., Hirche, K., Wurfl, J., Heinrich, W., Trankle, G.

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Reliability data’s of 0.5μm AlGaN/GaN on SiC technology qualification von Lambert, B., Thorpe, J., Behtash, R., Schauwecker, B., Bourgeois, F., Jung, H., Bataille, J., Mezenge, P., Gourdon, C., Ollivier, C., Floriot, D., Blanck, H.

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Change of the material properties of Ni, Pt and Au thin films and thin film stacks for GaN Schottky contacts during thermal processing von Schrade-Köhn, D, Leber, P, Behtash, R, Blanck, H, Schumacher, H

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AlGaN/GaN HEMTs on Si(111) with 6.6 W/mm output power density von Behtash, R., Tobler, H., Neuburger, M., Schurr, A., Leier, H., Cordier, Y., Semond, F., Natali, F., Massies, J.

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Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems von Dammann, M., Pletschen, W., Waltereit, P., Bronner, W., Quay, R., Müller, S., Mikulla, M., Ambacher, O., van der Wel, P.J., Murad, S., Rödle, T., Behtash, R., Bourgeois, F., Riepe, K., Fagerlind, M., Sveinbjörnsson, E.Ö.

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Restoration and Reclamation of the River Valleys' Landscape Structure for Urban Sustainability using FAHP Process, the Case of Northern Tehran- Iran von Masnavi, M R, Tasa, H, Ghobadi, M, Behtash, M R Farzad, Taji, S Negin

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Coplanar AlGaN/GaN HEMT power amplifier MMIC at X-band von Behtash, R., Tobler, H., Berlec, F.-J., Ziegler, V., Leier, H., Adelseck, B., Martin, T., Balmer, R.S., Pavlidis, D., Jansen, R.H., Neuburger, M., Schumacher, H.

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GaN technologies and developments: Status and trends von Buchta, M, Beilenhoff, K, Blanck, H, Thorpe, J, Behtash, R, Heckmann, S, Jung, H, Ouarch, Z, Camiade, M

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A Compact 16 Watt X-Band GaN-MMIC Power Amplifier von Klockenhoff, H., Behtash, R., Wurfl, J., Heinrich, W., Trankle, G.

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20W GaN HPAs for Next Generation X-Band T/R-Modules von Schuh, P., Leberer, R., Sledzik, H., Oppermann, M., Adelseck, B., Brugger, H., Behtash, R., Leier, H., Quay, R., Kiefer, R.

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MMIC power amplifier based on AlGaN/GaN HEMTs at 10 GHz von Behtash, R, Tobler, H, Berlec, F-J, Ziegler, V, Leier, H, Balmer, R S, Martin, T, Neuburger, M, Schumacher, H

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MMIC power amplifier based on AlGaN/GaN HEMTs at 10 GHz von Behtash, R., Tobler, H., Berlec, F.-J., Ziegler, V., Leier, H., Balmer, R.S., Martin, T., Neuburger, M., Schumacher, H.

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AlGaN/GaN HEMTs on Si(111) with 6.6W/mm output power density von Behtash, R, Tobler, H, Neuburger, M, Schurr, A, Leier, H, Semond, F, Natali, F, Massies, J

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ASSESSMENT OF VISUAL INSPECTION WITH ACETIC ACID (VIA) AS A SCREENING TEST FOR CERVICAL NEOPLASIA IN COMPARISON WITH CYTOLOGIC SCREENING von F. Ghaemmaghami, M. Modarres Gilani, M. Marjani, A. Mousavi, N. Behtash R. Moghimi

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ASSESSMENT OF VISUAL INSPECTION WITH ACETIC ACID (VIA) AS A SCREENING TEST FOR CERVICAL NEOPLASIA IN COMPARISON WITH CYTOLOGIC SCREENING von F. Ghaemmaghami, M. Modarres Gilani, M. Marjani, A. Mousavi, N. Behtash R. Moghimi

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A Broadband GaN-MMIC power amplifier for L to X Bands von Meliani, C., Behtash, R., Wurfl, J., Heinrich, W., Trankle, G.

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The impact of layout and technology on the DC and RF performance of AlGaN/GaN HFETs von Hosch, M., Behtash, R., Thorpe, J.R., Held, S., Blanck, H., Riepe, K., Schumacher, H.

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Reliability of AlGaN/GaN HEMTs under DC- and RF-operation von Dammann, M., Casar, M., Waltereit, P., Bronner, W., Konstanzer, H., Quay, R., Muller, S., Mikulla, M., Ambacher, O., van der Wel, P., Rodle, T., Behtash, R., Bourgeois, F., Riepe, K.

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Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems von Dammann, M., Pletschen, W., Waltereit, P., Bronner, W., Quay, R., Muller, S., Mikulla, M., Ambacher, O., van der Wel, P.J., Murad, S., Rodle, T., Behtash, R., Bourgeois, F., Riepe, K., Fagerlind, M., Sveinbjornsson, E. O.

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Advances in GaN-based discrete power devices for L- and X-band applications von Wurfl, J., Behtash, R., Lossy, R., Liero, A., Heinrich, W., Trankle, G., Hirche, K., Fischer, G.

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