Extreme temperature 6H-SiC JFET integrated circuit technology von Neudeck, Philip G., Garverick, Steven L., Spry, David J., Chen, Liang-Yu, Beheim, Glenn M., Krasowski, Michael J., Mehregany, Mehran

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Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect von Spry, David J., Neudeck, Philip G., Liangyu Chen, Lukco, Dorothy, Chang, Carl W., Beheim, Glenn M.

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Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °C von NEUDECK, Philip G, SPRY, David J, PROKOP, Norman F, CHEN, Liang-Yu, BEHEIM, Glenn M, OKOJIE, Robert S, CHANG, Carl W, MEREDITH, Roger D, FERRIER, Terry L, EVANS, Laura J, KRASOWSKI, Michael J

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Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect von Beheim, Glenn M., Krasowski, Michael J., Chang, Carl W., Neudeck, Philip G., Prokop, Norman F., Spry, David J., Lukco, Dorothy, Chen, Liang Yu

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Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits von Spry, David J., Chen, Liang Yu, Lukco, Dorothy, Krasowski, Michael J., Chang, Carl W., Neudeck, Philip G., Prokop, Norman F., Beheim, Glenn M.

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Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C von Neudeck, Philip G., Spry, David J., Liangyu Chen, Lukco, Dorothy, Chang, Carl W., Beheim, Glenn M.

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Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect von Chen, Liang Yu, Neudeck, Philip G., Beheim, Glenn M., Chang, Carl W., Lukco, Dorothy, Evans, Laura J., Spry, David J.

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Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design von Spry, David J., Neudeck, Philip G., Chen, Liang Yu, Chang, Carl W., Beheim, Glenn M.

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Fracture strength of silicon carbide microspecimens von Sharpe, W.N., Jadaan, O., Beheim, G.M., Quinn, G.D., Nemeth, N.N.

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Growth of step-free surfaces on device-size (0001)SiC mesas von Powell, J. Anthony, Neudeck, Philip G., Trunek, Andrew J., Beheim, Glenn M., Matus, Lawrence G., Hoffman, Richard W., Keys, Luann J.

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Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process von Evans, Laura J., Beheim, Glenn M.

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Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry von Spry, David J., Krasowski, Michael J., Chen, Liang Yu, Meredith, Roger D., Neudeck, Philip G., Chang, Carl W., Prokop, Norman F., Ferrier, Terry L., Beheim, Glenn M., Evans, Laura J., Okojie, Robert S.

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High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator von Spry, David J., Jordan, J.L., Krasowski, Michael J., Hunter, Gary W., Meredith, Roger D., Neudeck, Philip G., Scardelletti, M.C., Ponchak, G.E., Beheim, Glenn M., Chen, Liang Yu

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An Overview of High-Temperature Electronics and Sensor Development at NASA Glenn Research Center von Hunter, Gary W, Neudeck, Philip G, Okojie, Robert S, Beheim, Glenn M, Powell, J. A, Chen, Liangyu

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Enlargement of Step-Free SiC Surfaces by Homoepitaxial Web-Growth of Thin SiC Cantilevers von Neudeck, Philip G., Powell, J. Anthony, Beheim, Glenn M., Benavage, Emye L., Abel, Phillip B., Trunek, Andrew J., Spry, David J., Dudley, Michael, Vetter, William M.

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6H-SiC Lateral JFETs for Analog Integrated Circuits von Mehregany, Mehran, Neudeck, Philip G., Fu, Xiao An, Garverick, Steven, Patil, Amita, Beheim, Glenn M.

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Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 ^\hbox von Neudeck, P.G., Spry, D.J., Liang-Yu Chen, Beheim, G.M., Okojie, R.S., Chang, C.W., Meredith, R.D., Ferrier, T.L., Evans, L.J., Krasowski, M.J., Prokop, N.F.

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Sixty Earth-Day Test of a Prototype Pt/HTCC Alumina Package in a Simulated Venus Environment von Chen, Liangyu, Neudeck, Philip G., Meredith, Roger D., Lukco, Dorothy, Spry, David J., Nakley, Leah M., Phillips, Kyle G., Beheim, Glenn M., Hunter, Gary W.

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4H-SiC JFET Multilayer Integrated Circuit Technologies Tested up to 1000 K von Spry, David J, Neudeck, Phil G, Chen, Liangyu, Chang, Carl W, Lukco, Dorothy, Beheim, Glenn M.

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Year-long 500°C Operational Demonstration of Up-scaled 4H-SiC JFET Integrated Circuits von Neudeck, Philip G., Spry, David J., Krasowski, Michael J., Prokop, Norman F., Beheim, Glenn M., Chen, Liang-Yu, Chang, Carl W.

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