Extreme temperature 6H-SiC JFET integrated circuit technology von Neudeck, Philip G., Garverick, Steven L., Spry, David J., Chen, Liang-Yu, Beheim, Glenn M., Krasowski, Michael J., Mehregany, Mehran

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Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process von Evans, Laura J., Beheim, Glenn M.

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High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator von Chen, Liang Yu, Meredith, Roger D., Neudeck, Philip G., Ponchak, G.E., Beheim, Glenn M., Krasowski, Michael J., Jordan, J.L., Scardelletti, M.C., Spry, David J., Hunter, Gary W.

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Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect von Spry, David J., Neudeck, Philip G., Liangyu Chen, Lukco, Dorothy, Chang, Carl W., Beheim, Glenn M.

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Fracture Strength of Single-Crystal Silicon Carbide Microspecimens at 24 °C and 1000 °C von SHARPE, William N, BEHEIM, Glenn M, EVANS, Laura J, NEMETH, Noel N, JADAAN, Osama M

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Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 ^\hbox von Neudeck, P.G., Spry, D.J., Liang-Yu Chen, Beheim, G.M., Okojie, R.S., Chang, C.W., Meredith, R.D., Ferrier, T.L., Evans, L.J., Krasowski, M.J., Prokop, N.F.

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Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °C von NEUDECK, Philip G, SPRY, David J, PROKOP, Norman F, CHEN, Liang-Yu, BEHEIM, Glenn M, OKOJIE, Robert S, CHANG, Carl W, MEREDITH, Roger D, FERRIER, Terry L, EVANS, Laura J, KRASOWSKI, Michael J

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Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect von Lukco, Dorothy, Beheim, Glenn M., Spry, David J., Neudeck, Philip G., Chang, Carl W., Krasowski, Michael J., Prokop, Norman F., Chen, Liang Yu

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Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits von Chang, Carl W., Neudeck, Philip G., Beheim, Glenn M., Krasowski, Michael J., Prokop, Norman F., Chen, Liang Yu, Spry, David J., Lukco, Dorothy

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Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C von Neudeck, Philip G., Spry, David J., Liangyu Chen, Lukco, Dorothy, Chang, Carl W., Beheim, Glenn M.

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Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect von Neudeck, Philip G., Spry, David J., Evans, Laura J., Lukco, Dorothy, Chang, Carl W., Chen, Liang Yu, Beheim, Glenn M.

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Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design von Chen, Liang Yu, Chang, Carl W., Spry, David J., Neudeck, Philip G., Beheim, Glenn M.

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Fracture strength of silicon carbide microspecimens von Sharpe, W.N., Jadaan, O., Beheim, G.M., Quinn, G.D., Nemeth, N.N.

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Growth of step-free surfaces on device-size (0001)SiC mesas von Powell, J. Anthony, Neudeck, Philip G., Trunek, Andrew J., Beheim, Glenn M., Matus, Lawrence G., Hoffman, Richard W., Keys, Luann J.

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Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry von Evans, Laura J., Meredith, Roger D., Chang, Carl W., Neudeck, Philip G., Beheim, Glenn M., Krasowski, Michael J., Prokop, Norman F., Ferrier, Terry L., Okojie, Robert S., Spry, David J., Chen, Liang Yu

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6H-SiC Lateral JFETs for Analog Integrated Circuits von Mehregany, Mehran, Garverick, Steven, Fu, Xiao An, Patil, Amita, Neudeck, Philip G., Beheim, Glenn M.

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An Overview of High-Temperature Electronics and Sensor Development at NASA Glenn Research Center von Hunter, Gary W, Neudeck, Philip G, Okojie, Robert S, Beheim, Glenn M, Powell, J. A, Chen, Liangyu

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Enlargement of Step-Free SiC Surfaces by Homoepitaxial Web-Growth of Thin SiC Cantilevers von Neudeck, Philip G., Powell, J. Anthony, Beheim, Glenn M., Benavage, Emye L., Abel, Phillip B., Trunek, Andrew J., Spry, David J., Dudley, Michael, Vetter, William M.

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Fracture Origins in Miniature Silicon Carbide Structures von Sharpe, William N., Jadaan, Osama, Quinn, George D., Nemeth, Noel N., Beheim, Glenn M.

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Homoepitaxial 'Web growth' of SiC to terminate C-axis screw dislocations and enlarge step-free surfaces von Neudeck, Philip G, Powell, J Anthony, Trunek, Andrew, Spry, David, Beheim, Glenn M, Benavage, Emye, Abel, Phillip, Vetter, William M, Dudley, Michael

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