Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect von Spry, David J., Neudeck, Philip G., Liangyu Chen, Lukco, Dorothy, Chang, Carl W., Beheim, Glenn M.

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Extreme temperature 6H-SiC JFET integrated circuit technology von Neudeck, Philip G., Garverick, Steven L., Spry, David J., Chen, Liang-Yu, Beheim, Glenn M., Krasowski, Michael J., Mehregany, Mehran

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Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °C von NEUDECK, Philip G, SPRY, David J, PROKOP, Norman F, CHEN, Liang-Yu, BEHEIM, Glenn M, OKOJIE, Robert S, CHANG, Carl W, MEREDITH, Roger D, FERRIER, Terry L, EVANS, Laura J, KRASOWSKI, Michael J

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Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect von Beheim, Glenn M., Krasowski, Michael J., Chang, Carl W., Neudeck, Philip G., Prokop, Norman F., Spry, David J., Lukco, Dorothy, Chen, Liang Yu

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Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits von Spry, David J., Chen, Liang Yu, Lukco, Dorothy, Krasowski, Michael J., Chang, Carl W., Neudeck, Philip G., Prokop, Norman F., Beheim, Glenn M.

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Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C von Neudeck, Philip G., Spry, David J., Liangyu Chen, Lukco, Dorothy, Chang, Carl W., Beheim, Glenn M.

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Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect von Chen, Liang Yu, Neudeck, Philip G., Beheim, Glenn M., Chang, Carl W., Lukco, Dorothy, Evans, Laura J., Spry, David J.

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Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design von Spry, David J., Neudeck, Philip G., Chen, Liang Yu, Chang, Carl W., Beheim, Glenn M.

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Fracture strength of silicon carbide microspecimens von Sharpe, W.N., Jadaan, O., Beheim, G.M., Quinn, G.D., Nemeth, N.N.

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Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process von Evans, Laura J., Beheim, Glenn M.

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High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator von Spry, David J., Jordan, J.L., Krasowski, Michael J., Hunter, Gary W., Meredith, Roger D., Neudeck, Philip G., Scardelletti, M.C., Ponchak, G.E., Beheim, Glenn M., Chen, Liang Yu

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Silicon Carbide Differential Amplifiers for High-Temperature Sensing von Mehregany, Mehran, Neudeck, Philip G., Fu, Xiao An, Garverick, Steven, Patil, Amita, Beheim, Glenn M.

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An Overview of High-Temperature Electronics and Sensor Development at NASA Glenn Research Center von Hunter, Gary W, Neudeck, Philip G, Okojie, Robert S, Beheim, Glenn M, Powell, J. A, Chen, Liangyu

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Growth of step-free surfaces on device-size (0001)SiC mesas von Powell, J. Anthony, Neudeck, Philip G., Trunek, Andrew J., Beheim, Glenn M., Matus, Lawrence G., Hoffman, Richard W., Keys, Luann J.

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6H-SiC Lateral JFETs for Analog Integrated Circuits von Mehregany, Mehran, Neudeck, Philip G., Fu, Xiao An, Garverick, Steven, Patil, Amita, Beheim, Glenn M.

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Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry von Spry, David J., Krasowski, Michael J., Chen, Liang Yu, Meredith, Roger D., Neudeck, Philip G., Chang, Carl W., Prokop, Norman F., Ferrier, Terry L., Beheim, Glenn M., Evans, Laura J., Okojie, Robert S.

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Enlargement of Step-Free SiC Surfaces by Homoepitaxial Web-Growth of Thin SiC Cantilevers von Neudeck, Philip G., Powell, J. Anthony, Beheim, Glenn M., Benavage, Emye L., Abel, Phillip B., Trunek, Andrew J., Spry, David J., Dudley, Michael, Vetter, William M.

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Sixty Earth-Day Test of a Prototype Pt/HTCC Alumina Package in a Simulated Venus Environment von Chen, Liangyu, Neudeck, Philip G., Meredith, Roger D., Lukco, Dorothy, Spry, David J., Nakley, Leah M., Phillips, Kyle G., Beheim, Glenn M., Hunter, Gary W.

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Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 ^\hbox von Neudeck, P.G., Spry, D.J., Liang-Yu Chen, Beheim, G.M., Okojie, R.S., Chang, C.W., Meredith, R.D., Ferrier, T.L., Evans, L.J., Krasowski, M.J., Prokop, N.F.

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4H-SiC JFET Multilayer Integrated Circuit Technologies Tested up to 1000 K von Spry, David J, Neudeck, Phil G, Chen, Liangyu, Chang, Carl W, Lukco, Dorothy, Beheim, Glenn M.

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