Complex borides based on AlLiB14 as high-temperature thermoelectric compounds von Wan, L. F, Beckman, S. P

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A non-linear damage accumulation fatigue model for predicting strain life at variable amplitude loadings based on constant amplitude fatigue data von Huffman, P.J., Beckman, S.P.

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Non-Arrhenius ionic conductivities in glasses due to a distribution of activation energies von Bischoff, C, Schuller, K, Beckman, S P, Martin, S W

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Substitutional C on B sites in AlLiB14 von Wan, L F, Beckman, S P

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Coupled reaction–diffusion transport into a core–shell geometry von King, Clarence C., Beckman, S.P.

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Oriented polyvinylidene fluoride-trifluoroethylene (P(VDF-TrFE)) films by Langmuir-Blodgett deposition: a synchrotron X-ray diffraction study von Lindemann, W. R, Philiph, R. L, Chan, D. W. W, Ayers, C. T, Perez, E. M, Beckman, S. P, Strzalka, J, Chaudhary, S, Vaknin, D

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Distortion and Segregation in a Dislocation Core Region at Atomic Resolution von XU, X, BECKMAN, S. P, SPECHT, P, WEBER, E. R, CHRZAN, D. C, EMI, R. P, ARSLAN, I, BROWNING, N, BLELOCH, A, KISIELOWSKI, C

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Modeling of reaction-diffusion transport into a core-shell geometry von King, Clarence C., Brown, Amelia Ann, Sargin, Irmak, Bratlie, K.M., Beckman, S.P.

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Electrocaloric response of KNbO3 from a first-principles effective Hamiltonian von Barr, J.A., Beckman, S.P.

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Fracture strength of AlLiB14 von Wan, L F, Beckman, S P

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The influence of phase boundaries on multiphase superhard materials demonstrating positive deviation from the rule of mixtures von Huffman, P.J., Beckman, S.P.

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Atomic bonding in the AlLiB14 von Wan, L.F., Beckman, S.P.

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Structure and energy of the partial dislocation cores in GaAs von Beckman, S. P., Chrzan, D. C.

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Ab initio prediction of the structure of glide set dislocation cores in GaAs von Beckman, S P, Xu, X, Specht, P, Weber, E R, Kisielowski, C, Chrzan, D C

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First-principles study of imine bond formation energies of aldehyde isomers von Barr, Jordan A., Fei, Ming-en, Chang, Yu-Chung, Zhang, Jinwen, Beckman, S.P.

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Dislocation cores and their electronic states: partial dislocations in GaAs von Beckman, S.P, Chrzan, D.C

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Reconstruction energies of partial dislocations in cubic semiconductors von Beckman, S. P., Chrzan, D. C.

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The structure and properties of vacancies in Si nano-crystals calculated by real space pseudopotential methods von Beckman, S.P., Chelikowsky, James R.

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Corrigendum to: Modeling of reaction-diffusion transport into a core-shell geometry von King, Clarence C., Brown, Amelia Ann, Sargin, Irmak, Bratlie, K.M., Beckman, S.P.

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The structural, dielectric, elastic, and piezoelectric properties of KNbO3 from first-principles methods von Wan, L. F., Nishimatsu, T., Beckman, S. P.

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