A NOTE ON THRESHOLD FACTOR LEVEL(S) AND STONE-GEARY TECHNOLOGY von BEATTIE, BRUCE R., ARADHYULA, SATHEESH

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Water degradation implications when whole-farm irrigation water is binding von Watts, Myles J., Atwood, Joseph, Beattie, Bruce R.

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The Law of Demand versus Diminishing Marginal Utility von Beattie, Bruce R., LaFrance, Jeffrey T.

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A comparison of alternative crop response models von Frank, Michael D., Beattie, Bruce R., Embleton, Mary E.

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On the Function Coefficient, Euler's Theorem, and Homogeneity in Production Theory von Beattie, Bruce R., Holt, Matthew T., Watts, Myles J.

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Some almost-ideal remedies for healing land grant universities von Beattie, B.R. (University of Arizona)

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GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL von BEATTIE, Bruce, GUHA, Biswajeet, NASKAR, Sudipto, HSU, William, GHANI, Tahir

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Gate-all-around integrated circuit structures fabricated using alternate etch selective material von Beattie, Bruce, Ghani, Tahir, Guha, Biswajeet, Hsu, William, Naskar, Sudipto

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Asymmetric Stages, Ridgelines and the Economic Region for the Two-Variable-Factor Production Function Model von Beattie, Bruce R.

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Ten Commandments for Agricultural Economics (and Perhaps Other) Administrators von Beattie, Bruce R.

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Cavity Spacer for Nanowire Transistors von BEATTIE, Bruce, KANG, Jun Sung, CHAKRABARTY, Souvik, GUHA, Biswajeet, GULER, Leonard, HSU, William, GHANI, Tahir

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THREE-DIMENSIONAL GERMANIUM-BASED SEMICONDUCTOR DEVICES FORMED ON LOCALLY ISOLATED SUBSTRATES von PETHE, Abhijit Jayant, PATHI, Pragyansri, CAPPELLANI, Annalisa, BEATTIE, Bruce E

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DIELECTRIC ISOLATION LAYER BETWEEN A NANOWIRE TRANSISTOR AND A SUBSTRATE von KANG, Jun Sung, GULER, Leonard, GUHA, Biswajeet, HSU, William, BEATTIE, Bruce E

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Urban residential demand for water in the United States von Foster, Henry S., Beattie, Bruce R.

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Cavity spacer for nanowire transistors von Guler, Leonard, Beattie, Bruce, Chakrabarty, Souvik, Kang, Jun Sung, Ghani, Tahir, Guha, Biswajeet, Hsu, William

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Dielectric isolation layer between a nanowire transistor and a substrate von Guler, Leonard, Kang, Jun Sung, Beattie, Bruce E, Guha, Biswajeet, Hsu, William

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GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SELF-ALIGNED SOURCE OR DRAIN UNDERCUT FOR VARIED NANOWIRE WIDTHS von BEATTIE, Bruce, GHANI, Tahir, CEA, Stephen

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Self-aligned nanowire von Beattie, Bruce, Kang, Jun Sung, Armstrong, Mark, Ghani, Tahir, Guha, Biswajeet

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On the Specification of Price in Studies of Consumer Demand under Block Price Scheduling von Foster, Henry S., Beattie, Bruce R.

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NON-PLANAR INTEGRATED CIRCUIT STRUCTURES HAVING MITIGATED SOURCE OR DRAIN ETCH FROM REPLACEMENT GATE PROCESS von THOMPSON, Erica J, BEATTIE, Bruce, KANG, Jun Sung, GUHA, Biswajeet, HSU, William, CHEONG, Kai Loon, CRUM, Dax M, GHANI, Tahir

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