Silicon-based semiconductor heterostructures: column IV bandgap engineering von Bean, J.C.

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Fabrication and Characterization of Interconnected Nanowell Molecular Electronic Devices in Crossbar Architecture von Martin, Z.L., Majumdar, N., Cabral, M.J., Gergel-Hackett, N., Camacho-Alanis, F., Swami, N., Bean, J.C., Harriott, L.R., Yao, Y., Tour, J.M., Long, D., Shashidhar, R.

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An efficient method for cleaning Ge(100) surface von Prabhakarana, K., Ogino, T., Hull, R., Bean, J.C., Peticolas, L.J.

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Strain relaxation phenomena in GexSi1−x/Si strained structures von Hull, R., Bean, J.C., Eaglesham, D.J., Bonar, J.M., Buescher, C.

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Precision placement of heteroepitaxial semiconductor quantum dots von Hull, R., Gray, J.L., Kammler, M., Vandervelde, T., Kobayashi, T., Kumar, P., Pernell, T., Bean, J.C., Floro, J.A., Ross, F.M.

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Conditions for self-assembly of quantum fortresses and analysis of their possible use as quantum cellular automata von Vandervelde, T. E., Kalas, R. M., Kumar, P., Kobayashi, T., Pernell, T. L., Bean, J. C.

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Silicon MBE: From strained-layer epitaxy to device application von Bean, J.C.

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Observation of a (5×5) LEED pattern from GexSi1-x(111) alloys von GOSSMANN, H.-J, BEAN, J. C, FELDMAN, L. C, GIBSON, W. M

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Structural changes caused by H2 adsorption on the Si(111)7×7 surface von WOLFF, S. H, WAGNER, S, GIBSON, J. M, LORETTO, D, ROBINSON, I. K, BEAN, J. C

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Self-organized nanostructures in Si 1-x Ge x films on Si(001) von Teichert, C., Bean, J.C., Lagally, M.G.

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The effects of nucleation and growth on epitaxy in the CoSi2/Si system von Gibson, J.M., Bean, J.C., Poate, J.M., Tung, R.T.

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Avalanche gain in GexSi1-x/Si infrared waveguide detectors von Pearsall, T.P., Temkin, H., Bean, J.C., Luryi, S.

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Short-wavelength, high-speed, Si-based resonant-cavity photodetector von Murtaza, S.S., Nie, H., Campbell, J.C., Bean, J.C., Peticolas, L.J.

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High-speed polysilicon resonant-cavity photodiode with SiO2-Si Bragg reflectors von Bean, J.C., Jieming Qi, Schow, C.L., Li, R., Nie, H., Schaub, J., Campbell, J.C.

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Strained-Layer Epitaxy of Germanium-Silicon Alloys von Bean, John C.

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The creation of microelectronics-based visualizations to enhance science education and literacy von Bean, J.C., Groves, J.F., Kansari, N., Appleyard, M., Lehmbeck, C., Wayne, T., Brittingham, M.

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New infrared detector on a silicon chip von Luryi, S., Kastalsky, A., Bean, J.C.

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A DLTS study of the gap states of amorphous Si1−xHx alloys von Cohen, J.D., Lang, D.V., Bean, J.C., Harbison, J.P.

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High-speed polysilicon resonant-cavity photodiode with SiO/sub 2/-Si Bragg reflectors von Bean, J.C., Jieming Qi, Schow, C.L., Li, R., Nie, H., Schaub, J., Campbell, J.C.

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On interfaces and the phonon and electron confinement in Ge/Si multiple quantum wells von Manor, R., Brafman, O., Bean, J.C.

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