Hard-Switch Stressing of Vertical-Channel Implanted-Gate SiC JFETs von Lawson, K., Alvarez, G., Bayne, S. B., Veliadis, V., Ha, H. C., Urciuoli, D., El-Hinnawy, N., Borodulin, P., Scozzie, C.

Volltext

Suitability of N-ON Recessed Implanted Gate Vertical-Channel SiC JFETs for Optically Triggered 1200 V Solid-State Circuit Breakers von Veliadis, Victor, Steiner, B., Lawson, K., Bayne, S. B., Urciuoli, D., Ha, H. C.

Volltext

Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 °C von VELIADIS, V, STEINER, B, SCOZZIE, C, LAWSON, K, BAYNE, S. B, URCIUOLI, D, HA, H. C, EL-HINNAWY, N, GUPTA, S, BORODULIN, P, HOWELL, R. S

Volltext

Thermal and electrical evaluation of SiC GTOs for pulsed power applications von Geil, B.R., Bayne, S.B., Ibitayo, D., Koebke, M.G.

Volltext

Half-bridge inverter using 4H-SiC gate turn-off thyristors von Tipton, C.W., Bayne, S.B., Griffin, T.E., Scozzie, C.J., Geil, B., Agarwal, A.K., Richmond, J.

Volltext

Inductive switching of 4H-SiC gate turn-off thyristors von Bayne, S.B., Tipton, C.W., Griffin, T., Scozzie, C.J., Geil, B., Agarwal, A.K., Richmond, J.

Volltext

High Temperature Unclamped Inductive Switching Mode Evaluation of SiC JFET von Pushpakaran, B. N., Hinojosa, M., Bayne, S. B., Veliadis, V., Urciuoli, D., El-Hinnawy, N., Borodulin, P., Gupta, S., Scozzie, C.

Volltext

MOS-gated thyristors (MCTs) for repetitive high power switching von Bayne, S.B., Portnoy, W.M., Hefner, A.R.

Volltext

Advanced operational techniques and pn-pn-pn structures for high-power silicon carbide gate turn-off thyristors von Shah, P.B., Geil, B.R., Ervin, M.E., Griffin, T.E., Bayne, S.B., Jones, K.A., Oldham, T.

Volltext

Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 ^\hbox von Veliadis, V., Steiner, B., Lawson, K., Bayne, S. B., Urciuoli, D., Ha, H. C., El-Hinnawy, N., Gupta, S., Borodulin, P., Howell, R. S., Scozzie, C.

Volltext

Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events von Veliadis, Victor, Borodulin, P., Steiner, B., Scozzie, C., Bayne, S.B., El Hinnawy, N., Ha, H.C., Urciuoli, D.

Volltext

Thermal performance of water-cooled heat sinks: a comparison of two different designs von Salem, T.E., Porschet, D., Bayne, S.B.

Volltext

Evaluation of SiC JFET Performance During Repetitive Pulsed Switching Into an Unclamped Inductive Load von Pushpakaran, Bejoy N., Hinojosa, Miguel, Bayne, Stephen B., Veliadis, Victor, Urciuoli, Damian, El-Hinnawy, Nabil, Borodulin, Pavel, Gupta, Shalini, Scozzie, Charles

Volltext

Thermal performance of water-cooled heat sinks von Salem, T.E., Bayne, S.B., Porschet, D., Chen, Y.

Volltext

Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events von Steiner, B, Bayne, S B, Veliadis, Victor, Ha, H C, Urciuoli, D, El Hinnawy, N, Borodulin, P, Scozzie, C

Volltext

Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing von Lawson, Kevin, Alvarez, G., Ha, H.C., Veliadis, Victor, Urciuoli, Damian, Bayne, S. B., Scozzie, C.

Volltext

Evaluation of Advanced Si and SiC Switching Components for Army Pulsed Power Applications von O'Brien, H., Shaheen, W., Thomas, R.L., Crowley, T., Bayne, S.B., Scozzie, C.J.

Volltext

Thermal and electrical evaluation of SiC GTOs for pulsed power applications: Special issue on power modulators and repetitive pulsed power von GEIL, B. R, BAYNE, S. B, IBITAYO, D, KOEBKE, M. G

Volltext

Silvaco modeling of a 10kV SiC p-i-n diode von THOMAS, R. L, MORGENSTERN, M, BAYNE, S. B

Volltext

Evaluation of the Accuracy and Use of X-Ray Markers in Digital Templating for Total Hip Arthroplasty von Bayne, Christopher O., BS, Krosin, Michael, MD, Barber, Thomas C., MD

Volltext