Radiation-induced defects in sapphire single crystals irradiated by a pulsed ion beam von Ananchenko, D.V., Nikiforov, S.V., Kuzovkov, V.N., Popov, A.I., Ramazanova, G.R., Batalov, R.I., Bayazitov, R.M., Novikov, H.A.

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Effect of pulsed ion-beam treatment on the electronic and optical properties of GaN epitaxial films on sapphire von Zatsepin, D.A., Boukhvalov, D.W., Buntov, E.A., Zatsepin, A.F., Batalov, R.I., Novikov, H.A., Bayazitov, R.M.

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Pulse ion annealing of silicon layers with silver nanoparticles formed by ion implantation von Stepanov, A.L., Batalov, R.I., Bayazitov, R.M., Rogov, A.M.

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Synthesis of Mg2Si precipitates in Mg-implanted silicon by pulsed ion-beam treatment von Vavanova, S.V., Galkin, K.N., Galkin, N.G., Batalov, R.I., Bayazitov, R.M.

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Fabrication of composite based on GeSi with Ag nanoparticles using ion implantation von Batalov, R. I., Vorobev, V. V., Nuzhdin, V. I., Valeev, V. F., Bayazitov, R. M., Lyadov, N. M., Osin, Yu. N., Stepanov, A. L.

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Optical diagnostics of the laser-induced phase transformations in thin germanium films on silicon, sapphire, and fused silica von Novikov, H. A., Batalov, R. I., Bayazitov, R. M., Faizrakhmanov, I. A., Ivlev, G. D., Prokop’ev, S. L.

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Pulsed modification of germanium films on silicon, sapphire, and quartz substrates: Structure and optical properties von Novikov, H. A., Batalov, R. I., Bayazitov, R. M., Faizrakhmanov, I. A., Lyadov, N. M., Shustov, V. A., Galkin, K. N., Galkin, N. G., Chernev, I. M., Ivlev, G. D., Prokop’ev, S. L., Gaiduk, P. I.

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Formation of heavily doped semiconductor layers by pulsed ion beam treatment von Bayazitov, R.M., Zakirzyanova, L.Kh, Khaibullin, I.B., Remnev, G.E.

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Pulsed nanosecond annealing of magnesium-implanted silicon von Galkin, N. G., Vavanova, S. V., Galkin, K. N., Batalov, R. I., Bayazitov, R. M., Nuzhdin, V. I.

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Influence of [Cr.sup.+] ion implantation and pulsed ion-beam annealing on the formation and optical properties of Si/Cr[Si.sub.2]/Si heterostructures von Galkin, N.G, Goroshko, D.L, Galkin, K.N, Vavanova, S.V, Petrushkin, I.A, Maslov, A.M, Batalov, R.I, Bayazitov, R.M, Shustov, V.A

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Dynamics of photo-ionization, heating and crystallization of implanted silicon during laser annealing von Ivlev, G.D., Gatzkevich, E.I., Bayazitov, R.M., Batalov, R.I., Khaibullin, I.B.

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Structure and photoluminescent properties of SiC layers on Si, synthesized by pulsed ion-beam treatment von Bayazitov, R.M., Khaibullin, I.B., Batalov, R.I., Nurutdinov, R.M., Antonova, L.Kh, Aksenov, V.P., Mikhailova, G.N.

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Formation of nanocrystalline CrSi2 layers in Si by ion implantation and pulsed annealing von Batalov, R.I., Bayazitov, R.M., Valeev, V.F., Galkin, N.G., Goroshko, D.L., Galkin, K.N., Chusovitin, E.A., Gaiduk, P.I., Ivlev, G.D., Gatskevich, E.I.

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A pulsed synthesis of β-FeSi2 layers on silicon implanted with Fe+ ions von Terukov, E.I., Kudoyarova, V.Kh, Batalov, R.I., Bayazitov, R.M.

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A pulsed synthesis of β-FeSi 2 layers on silicon implanted with Fe + ions von Terukov, E.I., Kudoyarova, V.Kh, Batalov, R.I., Bayazitov, R.M.

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Heating and photoionization of silicon structures at laser treatments von Bayazitov, R.M.

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Laser annealing of implanted silicon with temperature-controlled transparency von Bayazitov, R.M., Galyautdinov, M.F., Batalov, R.I., Khaibullin, I.B., Groetzchel, R.

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Formation of Si-based light-emitting structures by ion implantation and pulsed treatments von Bayazitov, R.M., Batalov, R.I.

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Investigation of silicon implanted with carbon ions von Bulyarskii, S. V., Ambrozevich, A. S., Moliver, S. S., Dzhabrailov, T. A., Bayazitov, R. M., Batalov, R. I.

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Backside-Laser Annealing of Silicon at Low Temperature von Antonova, L.K., Bayazitov, R.M., Galyautdinov, M.F., Grotzchel, R.

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