Holistic Variability Analysis in Resistive Switching Memories Using a Two-Dimensional Variability Coefficient von Acal, Christian, Maldonado, David, Aguilera, Ana M., Zhu, Kaichen, Lanza, Mario, Roldán, Juan Bautista

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High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors von Pazos, Sebastian, Becker, Thales, Villena, Marco Antonio, Zheng, Wenwen, Shen, Yaqing, Yuan, Yue, Alharbi, Osamah, Zhu, Kaichen, Roldán, Juan Bautista, Wirth, Gilson, Palumbo, Felix, Lanza, Mario

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Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller von Pazos, Sebastian, Zheng, Wenwen, Zanotti, Tommaso, Aguirre, Fernando, Becker, Thales, Shen, Yaqing, Zhu, Kaichen, Yuan, Yue, Wirth, Gilson, Puglisi, Francesco Maria, Roldán, Juan Bautista, Palumbo, Felix, Lanza, Mario

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Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices von Rodriguez-Fernandez, Alberto, Aldana, Samuel, Campabadal, Francesca, Sune, Jordi, Miranda, Enrique, Jimenez-Molinos, Francisco, Bautista Roldan, Juan, Bargallo Gonzalez, Mireia

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A Review of CMOS Photodiode Modeling and the Role of the Lateral Photoresponse von Blanco-Filgueira, Beatriz, Lopez Martinez, Paula, Bautista Roldan Aranda, Juan

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In-Depth Study of Quantum Effects in SOI DGMOSFETs for Different Crystallographic Orientations von Balaguer, M., Aranda, J. B. R., Gamiz, F.

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TiN/Ti/HfO2/TiN memristive devices for neuromorphic computing: from synaptic plasticity to stochastic resonance von Maldonado, David, Cantudo, Antonio, Perez, Eduardo, Romero-Zaliz, Rocio, Perez-Bosch Quesada, Emilio, Mahadevaiah, Mamathamba Kalishettyhalli, Jimenez-Molinos, Francisco, Wenger, Christian, Roldan, Juan Bautista

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An Analysis on the Architecture and the Size of Quantized Hardware Neural Networks Based on Memristors von Romero-Zaliz, Rocio, Cantudo, Antonio, Perez, Eduardo, Jimenez-Molinos, Francisco, Wenger, Christian, Roldan, Juan Bautista

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Closed-Form and Explicit Analytical Model for Crosstalk in CMOS Photodiodes von Blanco-Filgueira, Beatriz, Lopez, Paula, Roldan, Juan Bautista

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Non-Uniform Spline Quasi-Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling Purposes von Ibáñez, María José, Barrera, Domingo, Maldonado, David, Yáñez, Rafael, Roldán, Juan Bautista

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Optimization of Multi-Level Operation in RRAM Arrays for In-Memory Computing von Pérez, Eduardo, Pérez-Ávila, Antonio Javier, Romero-Zaliz, Rocío, Mahadevaiah, Mamathamba Kalishettyhalli, Pérez-Bosch Quesada, Emilio, Roldán, Juan Bautista, Jiménez-Molinos, Francisco, Wenger, Christian

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Analytical Model for Crosstalk in p-nwell Photodiodes von Blanco-Filgueira, Beatriz, Lopez Martinez, Paula, Roldan Aranda, Juan Bautista, Hauer, Johann

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In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures von González-Cordero, Gerardo, Jiménez-Molinos, Francisco, Roldán, Juan Bautista, González, Mireia Bargallo, Campabadal, Francesca

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New method to analyze random telegraph signals in resistive random access memories von González-Cordero, Gerardo, González, Mireia B., Jiménez-Molinos, Francisco, Campabadal, Francesca, Roldán, Juan Bautista

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Thermal study of multilayer resistive random access memories based on HfO2 and Al2O3 oxides von Cazorla, Manuel, Aldana, Samuel, Maestro, Marcos, González, Mireia Bargalló, Campabadal, Francesca, Moreno, Enrique, Jiménez-Molinos, Francisco, Roldán, Juan Bautista

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Advanced temperature dependent statistical analysis of forming voltage distributions for three different HfO2-based RRAM technologies von Pérez, Eduardo, Maldonado, David, Acal, Christian, Ruiz-Castro, Juan Eloy, Aguilera, Ana María, Jiménez-Molinos, Francisco, Roldán, Juan Bautista, Wenger, Christian

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Standards for the Characterization of Endurance in Resistive Switching Devices von Lanza, Mario, Waser, Rainer, Ielmini, Daniele, Yang, J. Joshua, Goux, Ludovic, Suñe, Jordi, Kenyon, Anthony Joseph, Mehonic, Adnan, Spiga, Sabina, Rana, Vikas, Wiefels, Stefan, Menzel, Stephan, Valov, Ilia, Villena, Marco A, Miranda, Enrique, Jing, Xu, Campabadal, Francesca, Gonzalez, Mireia B, Aguirre, Fernando, Palumbo, Felix, Zhu, Kaichen, Roldan, Juan Bautista, Puglisi, Francesco Maria, Larcher, Luca, Hou, Tuo-Hung, Prodromakis, Themis, Yang, Yuchao, Huang, Peng, Wan, Tianqing, Chai, Yang, Pey, Kin Leong, Raghavan, Nagarajan, Dueñas, Salvador, Wang, Tao, Xia, Qiangfei, Pazos, Sebastian

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Toward Reliable Compact Modeling of Multilevel 1T-1R RRAM Devices for Neuromorphic Systems von Pérez-Bosch Quesada, Emilio, Romero-Zaliz, Rocío, Pérez, Eduardo, Kalishettyhalli Mahadevaiah, Mamathamba, Reuben, John, Schubert, Markus Andreas, Jiménez-Molinos, Francisco, Roldán, Juan Bautista, Wenger, Christian

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Analysis of conductive filament density in resistive random access memories: a 3D kinetic Monte Carlo approach von Aldana, Samuel, García-Fernández, Pedro, Romero-Zaliz, Rocío, Jiménez-Molinos, Francisco, Gómez-Campos, Francisco, Roldán, Juan Bautista

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Influence of stop and gate voltage on resistive switching of 1T1R HfO2-based memristors, a modeling and variability analysis von Maldonado, David, Cantudo, Antonio, Swamy Reddy, Keerthi Dorai, Pechmann, Stefan, Uhlmann, Max, Wenger, Christian, Roldan, Juan Bautista, Perez, Eduardo

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