Thermal conductivity of isotopically enriched Si von Capinski, W. S., Maris, H. J., Bauser, E., Silier, I., Asen-Palmer, M., Ruf, T., Cardona, M., Gmelin, E.

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Surface ripples, crosshatch pattern, and dislocation formation: Cooperating mechanisms in lattice mismatch relaxation von Albrecht, M., Christiansen, S., Michler, J., Dorsch, W., Strunk, H. P., Hansson, P. O., Bauser, E.

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Reduced effective misfit in laterally limited structures such as epitaxial islands von Christiansen, S., Albrecht, M., Strunk, H. P., Hansson, P. O., Bauser, E.

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III-V Semiconductors von Freyhardt, Herbert C

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Mass and energy analysis of gaseous species in NF3 plasma during silicon reactive ion etching von KONUMA, M, BAUSER, E

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Interfacial energies providing a driving force for Ge/Si heteroepitaxy von Hansson, PO, Albrecht, M, Dorsch, W, Strunk, HP, Bauser, E

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Adhesion in growth of defect-free silicon over silicon oxide von Raidt, H., Köhler, R., Banhart, F., Jenichen, B., Gutjahr, A., Konuma, M., Silier, I., Bauser, E.

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NONTHERMALIZED DISTRIBUTION OF ELECTRONS ON PICOSECOND TIME SCALE IN GAAS von SNOKE, DW, RUHLE, WW, LU, YC, BAUSER, E

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Material properties and room-temperature nuclear detector response of wide bandgap semiconductors von Schieber, M., Lund, J.C., Olsen, R.W., McGregor, D.S., Van Scyoc, J.M., James, R.B., Soria, E., Bauser, E.

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Incorporation of erbium in GaAs by liquid-phase epitaxy von BANTIEN, F, BAUSER, E, WEBER, J

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Microscopic growth mechanisms of semiconductors: Experiments and models von Bauser, E., Strunk, H.P.

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Defect-free epitaxial lateral overgrowth of oxidized (111)Si by liquid phase epitaxy von BERGMANN, R, BAUSER, E, WERNER, J. H

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Water vapor controlling selective reactive ion etching of SiO2/Si in NF3 plasma von KONUMA, M, BAUSER, E

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NF3 PLASMA GENERATION BY COMMERCIAL 50 HZ ALTERNATING-CURRENT DISCHARGE FOR DRY ETCHING von KONUMA, M, BAUSER, E

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Growth conditions for improving the quality of semiconductor single crystal material von Weishart, H., Bauser, E.

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Two-dimensional growth of strained Ge0.85Si0.15 on Si(111) by liquid phase epitaxy von HANSSON, P. O, ERNST, F, BAUSER, E

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Liquid phase epitaxy centrifuge for 100 mm diameter Si substrates von KONUMA, M, CZECH, E, SILIER, I, BAUSER, E

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Early growth stages of Ge0.85Si0.15 on Si(001) from Bi solution von DORSCH, W, CHRISTIANSEN, S, ALBRECHT, M, HANSSON, P. O, BAUSER, E, STRUNK, H. P

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Semiconductor liquid phase epitaxy for solar cell application von Konuma, M., Silier, I., Czech, E., Bauser, E.

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HIGH-QUALITY GEXSI1-X BY HETEROEPITAXIAL LATERAL OVERGROWTH von HANSSON, PO, GUSTAFSSON, A, ALBRECHT, M, BERGMANN, R, STRUNK, HP, BAUSER, E

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