Chemical Vapor Deposition of Organic-Inorganic Bismuth-Based Perovskite Films for Solar Cell Application von Sanders, S., Stümmler, D., Pfeiffer, P., Ackermann, N., Simkus, G., Heuken, M., Baumann, P. K., Vescan, A., Kalisch, H.

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Composition-control of magnetron-sputter-deposited (BaxSr1−x)Ti1+yO3+z thin films for voltage tunable devices von Im, Jaemo, Auciello, O., Baumann, P. K., Streiffer, S. K., Kaufman, D. Y., Krauss, A. R.

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Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications von LONGO, M, SALICIO, O, RUSHWORTH, S, WIEMER, C, FALLICA, R, MOLLE, A, FANCIULLI, M, GIESEN, C, SEITZINGER, B, BAUMANN, P. K, HEUKEN, M

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Electron affinity and Schottky barrier height of metal–diamond (100), (111), and (110) interfaces von Baumann, P. K., Nemanich, R. J.

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Surface cleaning, electronic states and electron affinity of diamond (100), (111) and (110) surfaces von Baumann, P.K, Nemanich, R.J

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Atomic vapor deposition of Ru and RuO2 thin film layers for electrode applications von MANKE, C, MIEDL, S, BOISSIERE, O, BAUMANN, P. K, LINDNER, J, SCHUMACHER, M, BRODYANSKI, A, SCHEIB, M

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Growth of Ru/RuO2 layers with atomic vapor deposition on plain wafers and into trench structures von MANKE, C, BOISSIERE, O, WEBER, U, BARBAR, G, BAUMANN, P. K, LINDNER, J, TAPAJNA, M, FRÖHLICH, K

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Optical constants of diindenoperylene in the dependence of preparation temperature and pressure von Greiner, D., Hinrichs, V., Wiesner, S., Ludwig, W., Fostiropoulos, K., Keiper, D., Baumann, P.K., Meyer, N., Heuken, M., Rusu, M., Lux-Steiner, M.Ch

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Study of platinum thin films deposited by MOCVD as electrodes for oxide applications von Valet, O., Doppelt, P., Baumann, P.K., Schumacher, M., Balnois, E., Bonnet, F., Guillon, H.

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Chemical vapour deposition of praseodymium oxide films on silicon: influence of temperature and oxygen pressure von Abrutis, A., Lukosius, M., Saltyte, Z., Galvelis, R., Baumann, P.K., Schumacher, M., Lindner, J.

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Properties of Ru/HfxSi1-xOy/Si metal oxide semiconductor gate stack structures grown by atomic vapor deposition von Frohlich, K, Luptak, R, Husekova, K, Cico, K, Tapajna, M, Weber, U, Baumann, P K, Lindner, J, Espinos, J P

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AVD ® technology for deposition of next generation devices von Weber, U., Schumacher, M., Lindner, J., Boissière, O., Lehnen, P., Miedl, S., Baumann, P.K., Barbar, G., Lohe, C., McEntee, T.

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AVD and ALD as Two Complementary Technology Solutions for Next Generation Dielectric and Conductive Thin-Film Processing von Schumacher, M., Baumann, P. K., Seidel, T.

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Negative electron affinity surfaces of aluminum nitride and diamond von Nemanich, R.J., Baumann, P.K., Benjamin, M.C., King, S.W., van der Weide, J., Davis, R.F.

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Negative electron affinity effects on H plasma exposed diamond (100) surfaces von Baumann, P.K., Nemanich, R.J.

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Epitaxial Pb(Mg1/3Nb2/3)O3 thin films synthesized by metal-organic chemical vapor deposition von Bai, G. R., Streiffer, S. K., Baumann, P. K., Auciello, O., Ghosh, K., Stemmer, S., Munkholm, A., Thompson, Carol, Rao, R. A., Eom, C. B.

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Electron emission measurements from CVD diamond surfaces von Bozeman, S.P., Baumann, P.K., Ward, B.L., Powers, M.J., Cuomo, J.J., Nemanich, R.J., Dreifus, D.L.

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Characterization of Ru and RuO2 thin films prepared by pulsed metal organic chemical vapor deposition von Roeder, G., Manke, C., Baumann, P. K., Petersen, S., Yanev, V., Gschwandtner, A., Ruhl, G., Petrik, P., Schellenberger, M., Pfitzner, L., Ryssel, H.

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Electron emission from metal-diamond (100), (111) and (110) interfaces von Baumann, P.K., Nemanich, R.J.

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One step deposition of PEDOT films by plasma radicals assisted polymerization via chemical vapour deposition von Pistillo, B. R., Menguelti, K., Desbenoit, N., Arl, D., Leturcq, R., Ishchenko, O. M., Kunat, M., Baumann, P. K., Lenoble, D.

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