Characterization of the Isothermal Compression Behavior of LLM-172 von Ciezak-Jenkins, Jennifer A, Borstad, G. M, Batyrev, I. G

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Modeling of Extended NH Solids at High Pressures von Batyrev, I. G.

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The structure of dislocations in (In,Al,Ga)N wurtzite films grown epitaxially on (0001) or (112¯2) GaN or AlN substrates von Jones, K. A., Batyrev, I. G.

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The modeling the structure of croconic and squaric acids under pressure von Batyrev, I. G.

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Raman spectra and sensitivity of LLM heterocycles under pressure von Batyrev, I. G., Bennion, J. C.

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Prediction of crystalline structure and properties of nytril cyanide solids at high pressure von Batyrev, I. G., Bennion, J. C.

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Reactions of water molecules in silica-based network glasses von Batyrev, I G, Tuttle, B, Fleetwood, D M, Schrimpf, R D, Tsetseris, L, Pantelides, S T

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Performance, reliability, radiation effects, and aging issues in microelectronics – From atomic-scale physics to engineering-level modeling von Pantelides, Sokrates T., Tsetseris, L., Beck, M.J., Rashkeev, S.N., Hadjisavvas, G., Batyrev, I.G., Tuttle, B.R., Marinopoulos, A.G., Zhou, X.J., Fleetwood, D.M., Schrimpf, R.D.

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Dislocations and stacking faults in hexagonal GaN von Batyrev, I. G., Sarney, W. L., Zheleva, T. S., Nguyen, C., Rice, B. M., Jones, K. A.

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Hydrogen effects in MOS devices von Tsetseris, L., Fleetwood, D.M., Schrimpf, R.D., Zhou, X.J., Batyrev, I.G., Pantelides, S.T.

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Simulations of the structure, vibrational spectra, and energy content of crystalline bis(4-amino-3,5-dinitropyrazol-1-yl)methane under high pressure von Batyrev, I. G., Bennion, J. C., Ciezak-Jenkins, J. A.

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Effects of Water on the Aging and Radiation Response of MOS Devices von Batyrev, I.G., Rodgers, M.P., Fleetwood, D.M., Schrimpf, R.D., Pantelides, S.T.

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Density functional theory and evolution algorithm calculations of elastic properties of AlON von Batyrev, I. G., Taylor, D. E., Gazonas, G. A., McCauley, J. W.

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Tip size effect on the appearance of a STM image for complex surfaces: Theory versus experiment for Si(111)-(7×7) von WANG, Y. L, GAO, H.-J, GUO, H. M, LIU, H. W, BATYREV, I. G, MCMAHOO, W. E, ZHANG, S. B

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The effects of aging on MOS irradiation and annealing response von Rodgers, M.P., Fleetwood, D.M., Schrimpf, R.D., Batyrev, I.G., Wang, S., Pantelides, S.T.

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Modelling of amorphous poly-CO structure with N and He von Batyrev, I G, Mattson, W D

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Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances von Van Benthem, K., Rashkeev, Sergey N., Evans, M.H., McDonald, K., Wang, Sanwu, Di Ventra, M., Schrimpf, R.D., Chung, G.Y., Isaacs-Smith, Tamara, Franceschetti, A., Porter, L.M., Pennycook, S.J., Dhar, S., Fleetwood, D.M., Zhou, X.J., Buczko, Ryszard, Tin, Chin Che, Williams, John R., Wang, S.R., Weller, Robert A., Batyrev, I.G., Duscher, G., Tsetseris, L., Pantelides, Sokrates T., Feldman, Leonard C.

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Effects of Hydrogen on the Radiation Response of Bipolar Transistors: Experiment and Modeling von Batyrev, I.G., Hughart, D., Durand, R., Bounasser, M., Tuttle, B.R., Fleetwood, D.M., Schrimpf, R.D., Rashkeev, S.N., Dunham, G.W., Law, M., Pantelides, S.T.

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Stability of LLM-172 under high pressure von Batyrev, I. G., Ciezak-Jenkins, J. A., Borstad, G. M.

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Modeling and measurements of the XRD patterns of extended solids under high-pressure von Batyrev, I. G., Coleman, S. P., Ciezak-Jenkins, J. A., Stavrou, E., Zaug, J. M.

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