Deep level defects in GaAs1−xBix/GaAs heterostructures von Jiang, Zenan, Beaton, D A, Lewis, R B, Basile, A F, Tiedje, T, Mooney, P M

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Numerical modeling of current-voltage characteristics to extract transport properties of organic semiconductors von Basile, A. F., Fraboni, B.

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Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces von Basile, A. F., Rozen, J., Williams, J. R., Feldman, L. C., Mooney, P. M.

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Trap densities and transport properties of pentacene metal–oxide–semiconductor transistors: II—Numerical modeling of dc characteristics von Basile, A. F., Kyndiah, A., Biscarini, F., Fraboni, B.

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Effects of antimony (Sb) on electron trapping near SiO2/4H-SiC interfaces von Mooney, P. M., Jiang, Zenan, Basile, A. F., Zheng, Yongju, Dhar, Sarit

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On cardinality bounds for θn-Urysohn spaces von Basile, F. A., Carlson, N., Porter, J.

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Electron trapping in 4H-SiC MOS capacitors fabricated by pre-oxidation nitrogen implantation von Basile, A. F., Dhar, S., Mooney, P. M.

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Deep level defects in n-type GaAsBi and GaAs grown at low temperatures von Mooney, P. M., Watkins, K. P., Jiang, Zenan, Basile, A. F., Lewis, R. B., Bahrami-Yekta, V., Masnadi-Shirazi, M., Beaton, D. A., Tiedje, T.

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Trap densities and transport properties of pentacene metal-oxide-semiconductor transistors. I. Analytical modeling of time-dependent characteristics von Basile, A. F., Cramer, T., Kyndiah, A., Biscarini, F., Fraboni, B.

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Modeling of high-frequency capacitance-voltage characteristics to quantify trap distributions near SiO2/SiC interfaces von Basile, A. F., Mooney, P. M.

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Effects of sodium ions on trapping and transport of electrons at the SiO2/4H-SiC interface von Basile, A. F., Ahyi, A. C., Feldman, L. C., Williams, J. R., Mooney, P. M.

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Erratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. 113 , 133708 (2013)] von Mooney, P. M., Watkins, K. P., Jiang, Zenan, Basile, A. F., Lewis, R. B., Bahrami-Yekta, V., Masnadi-Shirazi, M., Beaton, D. A., Tiedje, T.

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Characterization of solution-bonded GaAs/InGaAs/GaAs features on GaAs von Mooney, P M, Kavanagh, K L, Owen, D, Lackner, D, Cawston-Grant, B, Basile, A F, Salehzadeh, O, Watkins, S P

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Monotone versions of some selection principles II von Bonanzinga, M., Matveev, M., Basile, F.A.

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Monotone versions of some selection principles von Bonanzinga, M., Matveev, M., Basile, F.A.

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Modeling of high-frequency capacitance-voltage characteristics to quantify trap distributions near SiO 2 /SiC interfaces von Basile, A. F., Mooney, P. M.

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The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs von Verzellesi, G., Cavallini, A., Basile, A.F., Castaldini, A., Canali, C.

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Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) von Verzellesi, G., Mazzanti, A., Basile, A.F., Boni, A., Zanoni, E., Canali, C.

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Comment on “Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses” [J. Appl. Phys. 110, 1141... von Basile, A. F., Mooney, P. M.

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Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces von Mooney, P. M., Jiang, Zenan, Basile, A. F., Zheng, Yongju, Dhar, Sarit

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