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  1. 1
    Facet dependence of leakage current and carrier concentration in m‐plane GaN Schottky barrier diode fabricated with MOVPE

    Facet dependence of leakage current and carrier concentration in m‐plane GaN Schottky barrier diode fabricated with MOVPE von Tanaka, Atsushi, Barry, Ousmane1, Nagamatsu, Kentaro, Matsushita, Junya, Deki, Manato, Ando, Yuto, Kushimoto, Maki, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi


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  2. 2
    Facet dependence of leakage current and carrier concentration in m‐plane GaN Schottky barrier diode fabricated with MOVPE (Phys. Status Solidi A 8∕2017)

    Facet dependence of leakage current and carrier concentration in m‐plane GaN Schottky barrier diode fabricated with MOVPE (Phys. Status Solidi A 8∕2017) von Tanaka, Atsushi, Barry, Ousmane1, Nagamatsu, Kentaro, Matsushita, Junya, Deki, Manato, Ando, Yuto, Kushimoto, Maki, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi


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