312-fs pulse generation from a passive C-band InAs/InP quantum dot mode-locked laser von Lu, Z G, Liu, J R, Raymond, S, Poole, P J, Barrios, P J, Poitras, D

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Dual-wavelength 92.5 GHz self-mode-locked InP-based quantum dot laser von JIAREN LIU, ZHENGUO LU, RAYMOND, S, POOLE, P. J, BARRIOS, P. J, POITRAS, D

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Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height von Haffouz, S, Barrios, P J, Normandin, R, Poitras, D, Lu, Z

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Ultra-high repetition rate InAs/InP quantum dot mode-locked lasers von Lu, Z.G., Liu, J.R., Poole, P.J., Jiao, Z.J., Barrios, P.J., Poitras, D., Caballero, J., Zhang, X.P.

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High performance InAs/InP quantum dot 34.462-GHz C-band coherent comb laser module von Lu, Z G, Liu, J R, Song, C Y, Weber, J, Mao, Y, Chang, S D, Ding, H P, Poole, P J, Barrios, P J, Poitras, D, Janz, S, O'Sullivan, M

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THz optical pulses from a coupled-cavity quantum-dot laser von Liu, J., Lu, Z.G., Poole, P.J., Barrios, P.J., Poitras, D., Jiao, Z., Zhang, X.P.

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Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: A new approach in controlling the bandwidth von Haffouz, S., Raymond, S., Lu, Z.G., Barrios, P.J., Roy-Guay, D., Wu, X., Liu, J.R., Poitras, D., Wasilewski, Z.R.

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Uniform 90-channel multiwavelength InAs/InGaAsP quantum dot laser von LIU, J, LU, Z, RAYMOND, S, POOLE, P. J, BARRIOS, P. J, PAKULSKI, G, POITRAS, D, XIAO, G, ZHANG, Z

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Highly efficient non-degenerate four-wave mixing process in InAs/InGaAsP quantum dots von LU, Z. G, LIU, J. R, RAYMOND, S, POOLE, P. J, BARRIOS, P. J, POITRAS, D, SUN, F. G, PAKULSKI, G, BOCK, P. J, HALL, T

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An L-band monolithic InAs/InP quantum dot mode-locked laser with femtosecond pulses von Lu, Z G, Liu, J R, Poole, P J, Raymond, S, Barrios, P J, Poitras, D, Pakulski, G, Grant, P, Roy-Guay, D

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High-performance 1.52 μm InAs/InP quantum dot distributed feedback laser von LU, Z. G, POOLE, P. J, LIU, J. R, BARNOS, P. J, JIAO, Z. J, PAKULSKI, G, POITRAS, D, GOODCHILD, D, RIOUX, B, SPRINGTHORPE, A. J

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Broadband superluminescent diodes with height-engineered InAs-GaAs quantum dots von HAFFOUZ, S, RODERMANS, M, BARRIOS, P. J, LAPOINTE, J, RAYMOND, S, LU, Z, POITRAS, D

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Modal Gain of 2.4-$\mu$m InGaAsSb–AlGaAsSb Complex-Coupled Distributed-Feedback Lasers von Gupta, J. A., Barrios, P. J., Lapointe, J., Aers, G. C., Storey, C., Waldron, P.

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Room-temperature continuous-wave operation of type-I GaSb-based lasers at 3.1 μm von GUPTA, J. A, BARRIOS, P. J, AERS, G. C, WALDRON, P, STOREY, C

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Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers von Piwonski, T., Pulka, J., Madden, G., Huyet, G., Houlihan, J., Pozo, J., Vogiatzis, N., Ivanov, P., Rorison, J. M., Barrios, P. J., Gupta, J. A.

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Modal Gain of 2.4- \mum InGaAsSb-AlGaAsSb Complex-Coupled Distributed-Feedback Lasers von Gupta, J. A., Barrios, P. J., Lapointe, J., Aers, G. C., Storey, C., Waldron, P.

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XAFS and X-ray reflectivity study of III-V compound native oxide/GaAs interfaces von Cheong, Seong-Kyun, Bunker, Bruce A., Hall, D. C., Snider, G. L., Barrios, P. J.

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Intrinsic Dynamic Properties of High-Characteristic Temperature GaInNAs Laser Diodes Operating at 1.3 [mu]m von Zhang, X, Gupta, J. A, Barrios, P. J, Pakulski, G, Hall, T. J

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HSD18 Patients' Perceptions of Safety of the Health Care in a Large Hospital Institution in Barranquilla, Colombia von Galvan-Barrios, JP, Olivares-Cerpa, FDJ, Jervis-Jalabe, D, Alvis Zakzuk, NJ

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Single-mode 2.4 μm InGaAsSb/AlGaAsSb distributed feedback lasers for gas sensing von Gupta, J. A., Barrios, P. J., Lapointe, J., Aers, G. C., Storey, C.

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