Comparative study of surface properties of austenitic stainless steels in sulfuric and hydrochloric acid solutions von Varga, K., Baradlai, P., Barnard, W.O., Myburg, G., Halmos, P., Potgieter, J.H.

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Corrosion behaviour of duplex stainless steels containing minor ruthenium additions in reducing acid media von POTGIETER, J. H, BARNARD, W. O, MYBURG, G, VARGA, K, BARADLAI, P, TOMCSANYI, L

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Effect of sputter voltage on the electrical characteristics of argon ion sputtered n-type GaAs von Auret, F.D., Myburg, G., Goodman, S.A., Bredell, L.J., Barnard, W.O.

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Surface composition of Ru containing duplex stainless steel after passivation in non-oxidizing media von Myburg, G, Varga, K, Barnard, W.O, Baradlai, P, Tomcsányi, L, Potgieter, J.H, Louw, C.W, van Staden, M.J

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Preferential sputtering of InP: an AES investigation von Malherbe, J.B., Barnard, W.O.

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Investigation of Spontaneous Passivation of Stainless Steels Modified with Ruthenium von Potgieter, J.H., Baradlai, P., Barnard, W.O., Varga, K., Tomcsányi, L.

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Effect of electron-beam deposition rate on the electrical properties of Ti/ and Pt/n-GaAs contacts von Auret, F.D., Barnard, W.O., Meyer, W.E., Myburg, G.

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Vacuum annealing characteristics of electron beam evaporated ruthenium contacts to n-GaAs grown by organometallic vapour phase epitaxy von Myburg, G., Barnard, W.O., Meyer, W.E., Auret, F.D., Burger, H.

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An Auger electron spectroscopy study of annealed gold contacts to InP von Barnard, W.O., Malherbe, J.B., Auret, F.D., Myburg, G.

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Preferential sputtering of InP: an AES investigation von Malherbe, J.B., Barnard, W.O.

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Ohmic contacts for GaAs devices von Barnard, W.O.&Myburg, G.

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Electrical characterization of argon-ion sputtered n-GaAs von Bredell, L.J., Auret, F.D., Myburg, G., Barnard, W.O.

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Alternative ohmic contact systems to n-InP von Barnard, W.O., Myburg, G., Auret, F.D., Malherbe, J.B., Louw, C.W.

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AuGe/In ohmic contacts to n-type GaAs von Barnard, W.O., Willis, A.J.

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Ruthenium and ruthenium-based contacts to GaAs von Myburg, G., Barnard, W.O., Meyer, W.E., Louw, C.W., van den Berg, N.G., Hayes, M., Auret, F.D., Goodman, S.A.

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Formation of ohmic contacts to n-GaAs by ion beam mixing and annealing von Barnard, W.O., Malherbe, J.B., Lacquet, B.M.

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Electrical characterization of argon ion sputter-induced defects in GaAs von Auret, F.D., Barnard, W.O., Myburg, G.&Bredell, L.J.

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Comparison between Defects Introduced during Electron Beam Evaporation of Pt and Ti on n-GaAs von Kunert, H.W., Myburg, G., Bredell, L.J., Barnard, W.O., Auret, F. Danie

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Characteristics of ion beam mixed and alloyed AuGe/Ni ohmic contacts to n-GaAs von Barnard, W.O., Strydom, H.J., Kruger, M.M., Schildhauer, C., Lacquet, B.M.

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Angle-dependent X-ray photoelectron spectroscopy studies of epitaxial layers on single-crystal substrates von Strydom, H.J., Barnard, W.O. and Botha, A.P.

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