Impurity characterization in diamond for quantum and electronic applications: advances with time-resolved cathodoluminescence von Arnold, C, Temgoua, S, Barjon, J

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Insight into boron-doped diamond Raman spectra characteristic features von Mortet, V., Vlčková Živcová, Z., Taylor, A., Frank, O., Hubík, P., Trémouilles, D., Jomard, F., Barjon, J., Kavan, L.

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Reduction of dislocation densities in single crystal CVD diamond by confinement in the lateral sector von Boussadi, A., Tallaire, A., Kasu, M., Barjon, J., Achard, J.

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Epitaxial diamond on Ir/ SrTiO3/Si (001): From sequential material characterizations to fabrication of lateral Schottky diodes von Arnault, J.C., Lee, K.H., Delchevalrie, J., Penuelas, J., Mehmel, L., Brinza, O., Temgoua, S., Stenger, I., Letellier, J., Saint-Girons, G., Bachelet, R., Issaoui, R., Tallaire, A., Achard, J., Barjon, J., Eon, D., Ricolleau, C., Saada, S.

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Identification by deuterium diffusion of a nitrogen-related deep donor preventing the p-type doping of ZnO von Temahuki, N., Jomard, F., Lusson, A., Stenger, I., Hassani, S., Chevallier, J., Chauveau, J. M., Morhain, C., Barjon, J.

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Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond von Balasubramaniam, Y., Pobedinskas, P., Janssens, S. D., Sakr, G., Jomard, F., Turner, S., Lu, Y.-G., Dexters, W., Soltani, A., Verbeeck, J., Barjon, J., Nesládek, M., Haenen, K.

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Exciton-exciton annihilation in hBN von Plaud, A., Schué, L., Watanabe, K., Taniguchi, T., Fossard, F., Ducastelle, F., Loiseau, A., Barjon, J.

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Low frequency Raman spectroscopy of few-atomic-layer thick hBN crystals von Stenger, I, Schué, L, Boukhicha, M, Berini, B, Plaçais, B, Loiseau, A, Barjon, J

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Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure von Sonntag, J, Li, J, Plaud, A, Loiseau, A, Barjon, J, Edgar, J H, Stampfer, C

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Electron mobility in (100) homoepitaxial layers of phosphorus-doped diamond von Stenger, I., Pinault-Thaury, M.-A., Temahuki, N., Gillet, R., Temgoua, S., Bensalah, H., Chikoidze, E., Dumont, Y., Barjon, J.

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High quality thick CVD diamond films homoepitaxially grown on (111)-oriented substrates von Tallaire, A., Achard, J., Boussadi, A., Brinza, O., Gicquel, A., Kupriyanov, I.N., Palyanov, Y.N., Sakr, G., Barjon, J.

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Impurity-to-band activation energy in phosphorus doped diamond von Stenger, I., Pinault-Thaury, M.-A., Kociniewski, T., Lusson, A., Chikoidze, E., Jomard, F., Dumont, Y., Chevallier, J., Barjon, J.

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High quality, large surface area, homoepitaxial MPACVD diamond growth von Silva, F., Achard, J., Brinza, O., Bonnin, X., Hassouni, K., Anthonis, A., De Corte, K., Barjon, J.

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Excitons in bulk black phosphorus evidenced by photoluminescence at low temperature von Carré, E, Sponza, L, Lusson, A, Stenger, I, Gaufrès, E, Loiseau, A, Barjon, J

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Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates von Mortet, V., Pernot, J., Jomard, F., Soltani, A., Remes, Z., Barjon, J., D'Haen, J., Haenen, K.

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Reduction of dislocation densities in single crystal CVD diamond by using self-assembled metallic masks von Naamoun, M., Tallaire, A., Doppelt, P., Gicquel, A., Legros, M., Barjon, J., Achard, J.

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Arsenic-bound excitons in diamond von Barjon, J., Jomard, F., Morata, S.

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Origin of the excitonic recombinations in hexagonal boron nitride by spatially resolved cathodoluminescence spectroscopy von Jaffrennou, P., Barjon, J., Lauret, J.-S., Attal-Trétout, B., Ducastelle, F., Loiseau, A.

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Freestanding CVD boron doped diamond single crystals: A substrate for vertical power electronic devices? von Achard, J., Issaoui, R., Tallaire, A., Silva, F., Barjon, J., Jomard, F., Gicquel, A.

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Growth of thick and heavily boron-doped (113)-oriented CVD diamond films von Tallaire, A., Valentin, A., Mille, V., William, L., Pinault-Thaury, M.A., Jomard, F., Barjon, J., Achard, J.

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