High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions von Simoen, E., Eneman, G., Gonzalez, M. Bargallo, Kobayashi, D., Rodríguez, A. Luque, Jiménez Tejada, J.-A., Claeys, C.

Volltext

Leakage current study of Si1-xCx embedded source/drain junctions von SIMOEN, E, VISSOUVANADIN, B, LU, J. P, WISE, R, TALEB, N, BARGALLO GONZALEZ, M, VERHEYEN, P, LOO, R, CLAEYS, C, MACHKAOUTSAN, V, BAUER, M, THOMAS, S

Volltext

Stress analysis of Si1-xGex embedded source/drain junctions von BARGALLO GONZALEZ, M, SIMOEN, E, TOMASINI, P, THOMAS, S. G, LU, J. P, WISE, R, NAKA, N, OKUNO, Y, ENEMAN, G, HIKAVYY, A, VERHEYEN, P, LOO, R, CLAEYS, C, MACHKAOUTSAN, V

Volltext

Trap-Assisted Tunneling in Deep-Submicron Ge pFET Junctions von Eneman, Geert, Bargallo Gonzalez, Mireia, Hellings, Geert, De Jaeger, Brice, Wang, Gang, Mitard, Jerome, DeMeyer, Kristin, Claeys, Cor, Meuris, Marc, Heyns, Marc, Hoffmann, Thomas, Simoen, Eddy

Volltext

Event-Driven Stochastic Compact Model for Resistive Switching Devices von Sune, J., Bargallo-Gonzalez, M., Saludes, M., Campabadal, F., Miranda, E.

Volltext

Growth and Processing Defects in CMOS Homo- and Hetero-Epitaxy von Simoen, Eddy, Bargallo Gonzalez, Mireia, Eneman, Geert, Rosseel, Eric, Hikavyy, Andriy Y., Kobayashi, D., Loo, Roger, Caymax, Matty, Claeys, Cor

Volltext

(Invited) High Doping/High Electric Field Effects on the Characteristics of CMOS Compatible p-n Junctions von Simoen, Eddy, Eneman, Geert, Bargallo-Gonzalez, Mireia, Kobayashi, Daisuke, Luque Rodriguez, Abraham, Jiminez Tejada, Juan-Antonio, Claeys, Cor

Volltext

Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers von Simoen, E., Brouwers, G., Eneman, G., Bargallo Gonzalez, M., De Jaeger, B., Mitard, J., Brunco, D.P., Souriau, L., Cody, N., Thomas, S., Meuris, M.

Volltext

Modeling impact of electric field and strain on the leakage of embedded SiGe source/drain junctions von Luque Rodriguez, A., Jimenez Tejada, J.A., Rodriguez-Bolivar, S., Bargallo Gonzalez, M., Eneman, G., Claeys, C., Simoen, E.

Volltext

Electric field dependence of trap-assisted-tunneling current in strained SiGe source/drain junctions von Gonzalez, M. Bargallo, Simoen, E., Vissouvanadin, B., Eneman, G., Verheyen, P., Loo, R., Claeys, C.

Volltext

Leakage Current Control in Recessed SiGe Source/Drain Junctions von Claeys, C., Gonzalez, M. Bargallo, Eneman, G., Verheyen, P., Bender, H., Schreutelkamp, R., Washington, L., Nouri, F., Simoen, E.

Volltext

Combined IV and CV Analysis of Laser Annealed Carbon and Boron Implanted SiGe Epitaxial Layers von Kobayashi, Daisuke, Bargallo-Gonzalez, Mireia, Rosseel, Erik, Hikavyy, Andriy, Hirose, Kazuyuki, Simoen, Eddy, Claeys, C.

Volltext

Leakage current study of Si 1− x C x embedded source/drain junctions von Simoen, E., Vissouvanadin, B., Taleb, N., Gonzalez, M. Bargallo, Verheyen, P., Loo, R., Claeys, C., Machkaoutsan, V., Bauer, M., Thomas, S., Lu, J.P., Wise, R.

Volltext

Electrical Activity of Dislocations and Defects in Strained Si and Ge Based Devices von Simoen, Eddy R., Eneman, Geert, Verheyen, Peter, Loo, Roger, Bargallo Gonzalez, Mireia, Claeys, Cor

Volltext

Electrical Defect Issues of Hetero-Epitaxy for Advanced Nanometric CMOS Technologies von Claeys, Cor, Gonzalez, Mireia B., Eneman, G., Hikavyy, Andriy, Loo, Roger, Simoen, Eddy

Volltext

Electrical Performance and Reliability Aspects of Strain Engineered Deep Submicron CMOS Technologies von Claeys, Cor, Eneman, Geert, Bargallo Gonzalez, Mireia, Put, Sofie, Simoen, Eddy

Volltext

Stress analysis of Si 1− x Ge x embedded source/drain junctions von Bargallo Gonzalez, M., Simoen, E., Naka, N., Okuno, Y., Eneman, G., Hikavyy, A., Verheyen, P., Loo, R., Claeys, C., Machkaoutsan, V., Tomasini, P., Thomas, S.G., Lu, J.P., Wise, R.

Volltext

Diode Analysis of Electrically Active Defects in Recessed SiGe Source/Drain Diodes von Simoen, Eddy R., Bargallo Gonzalez, Mireia, Eneman, Geert, Verheyen, Peter, Claeys, C. L., Benedetti, Antonio, Bender, Hugo, De Meyer, Krtistien, Schreutelkamp, Robert, Washington, Lori, Nouri, Faran

Volltext

Ge content and recess depth dependence of the band-to-band tunneling current in Si1-xGex/Si hetero-junctions von Rodríguez, A L, Tejada, J A Jiménez, Gonzalez, M B, Eneman, G, Claeys, C, Simoen, E

Volltext

Impact of Etching Depth on the Leakage Current of Recessed SiGe Junctions von Bargallo Gonzalez, M., Eneman, G., Verheyen, P., Claeys, C., Benedetti, A., Bender, H., De Meyer, K., Simoen, E., Schreutelkamp, R., Washington, L., Nouri, F.

Volltext bestellen