Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111) von Rathkanthiwar, Shashwat, Kalra, Anisha, Remesh, Nayana, Bardhan, Abheek, Muralidharan, Rangarajan, Nath, Digbijoy N., Raghavan, Srinivasan

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An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si von Chandrasekar, Hareesh, Mohan, Nagaboopathy, Bardhan, Abheek, Bhat, K. N., Bhat, Navakanta, Ravishankar, N., Raghavan, Srinivasan

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Growth design for high quality AlxGa(1−x)N layer with high AlN-fraction on Si (111) substrate by MOCVD von Bardhan, Abheek, Raghavan, Srinivasan

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8 A, 200 V normally-off cascode GaN-on-Si HEMT: From epitaxy to double pulse testing von Baby, Rijo, Mandal, Manish, Roy, Shamibrota K., Bardhan, Abheek, Muralidharan, Rangarajan, Basu, Kaushik, Raghavan, Srinivasan, Nath, Digbijoy N.

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The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth von Bardhan, Abheek, Mohan, Nagaboopathy, Chandrasekar, Hareesh, Ghosh, Priyadarshini, Sridhara Rao, D. V., Raghavan, Srinivasan

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An Early In-Situ Stress Signature of the AlN-Si Pre-growth Interface for Successful Integration of Nitrides with (111) Si von Chandrasekar, Hareesh, Mohan, Nagaboopathy, Bardhan, Abheek, Bhat, K N, Bhat, Navakanta, Ravishankar, N, Raghavan, Srinivasan

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