Full band calculations of the intrinsic lower limit of contact resistivity von Maassen, J., Jeong, C., Baraskar, A., Rodwell, M., Lundstrom, M.

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Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node von Zhen Zhang, Koswatta, S. O., Bedell, S. W., Baraskar, A., Guillorn, M., Engelmann, S. U., Yu Zhu, Gonsalves, J., Pyzyna, A., Hopstaken, M., Witt, C., Li Yang, Fei Liu, Newbury, J., Wei Song, Cabral, C., Lofaro, M., Ozcan, A. S., Raymond, M., Lavoie, C., Sleight, J. W., Rodbell, K. P., Solomon, P. M.

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Compound semiconductors on silicon for future generation VLSI von Hill, R J W, Baraskar, A, Park, C, Barnett, J, Majhi, P, Jammy, R

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Effect of growth temperature on the magnetic, microwave, and cation inversion properties on NiFe2O4 thin films deposited by pulsed laser ablation deposition von Chinnasamy, C. N., Yoon, S. D., Yang, Aria, Baraskar, Ashish, Vittoria, C., Harris, V. G.

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Functionalization of FeCo alloy nanoparticles with highly dielectric amorphous oxide coatings von Nguyen, Q., Chinnasamy, C. N., Yoon, S. D., Sivasubramanian, S., Sakai, T., Baraskar, A., Mukerjee, S., Vittoria, C., Harris, V. G.

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Ultra low contact resistivities for CMOS beyond 10nm node von Zhen, Zhang, Koswatt, S., Bedell, S., Baraskar, A., Guillorn, M., Engelmann, S., Zhu, Y., Gonsalves, J., Pyzyna, A., Hopstaken, M., Witt, C., Yang, L., Liu, F., Newbury, J., Song, W., Cabral, C., Lofaro, M., Ozcan, A., Raymond, M, Lavoie, C., Sleight, J., Rodbell, K., Solomon, P.

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InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f/f \sim \hbox\ \hbox von Jain, V, Lobisser, E, Baraskar, A, Thibeault, B J, Rodwell, M J W, Griffith, Z, Urteaga, M, Loubychev, D, Snyder, A, Wu, Y, Fastenau, J M, Liu, W K

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Lower limits to specific contact resistivity von Baraskar, A., Gossard, A. C., Rodwell, M. J. W.

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Microwave, magnetic, and structural properties of nanocrystalline exchange-coupled Ni11Co11Fe66Zr7B4Cu1 films for high frequency applications von Yoon, S. D., Baraskar, A. K., Geiler, A., Yang, A., Pettiford, C., Sun, N. X., Goswami, R., Willard, M. A., Vittoria, C., Harris, V. G.

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1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance von Jain, V., Rode, J. C., Han-Wei Chiang, Baraskar, A., Lobisser, E., Thibeault, B. J., Rodwell, M., Urteaga, M., Loubychev, D., Snyder, A., Wu, Y., Fastenau, J. M., Liu, W. K.

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High-performance Si1−xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions von Hashemi, P., Kobayashi, M., Majumdar, A., Yang, L. A., Baraskar, A., Balakrishnan, K., Kim, W., Chan, K., Engelmann, S. U., Ott, J. A., Bedell, S. W., Murray, C. E., Liang, S., Dennard, R. H., Sleight, J. W., Leobandung, E., Park, D.-G

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Microwave, magnetic, and structural properties of nanocrystalline exchange-coupled Ni 11 Co 11 Fe 66 Zr 7 B 4 Cu 1 films for high frequency applications von Yoon, S. D., Baraskar, A. K., Geiler, A., Yang, A., Pettiford, C., Sun, N. X., Goswami, R., Willard, M. A., Vittoria, C., Harris, V. G.

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Co-precipitation synthesis in the presence of surfactant and characterization of nanosized CaRuO3 powders and its application in fired thick film resistors in nanoelectronics von Gurunathan, K., Baraskar, Ashish, Marimuthu, R., Amalnerkar, D.P.

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hbox In 0.53 hbox Ga 0.47 hbox As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth von Singisetti, U, Wistey, MA, Burek, G J, Baraskar, A K, Thibeault, B J, Gossard, A C, Rodwell, MJW, Shin, Byungha, Kim, E J, McIntyre, P C, Bo Yu, Bo Yu, Yuan, Yu, Wang, D, Taur, Yuan, Asbeck, P, Lee, Yong-Ju

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InGaAs/InP DHBTs demonstrating simultaneous ƒτ/ƒmax ∼ 460/850 GHz in a refractory emitter process von Jain, V., Lobisser, E., Baraskar, A., Thibeault, B. J., Rodwell, M. J. W., Urteaga, M., Loubychev, D., Snyder, A., Wu, Y., Fastenau, J. M., Liu, W. K.

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THz Bipolar Transistor Circuits: Technical Feasibility, Technology Development, Integrated Circuit Results von Rodwell, M., Lobisser, E., Wistey, M., Jain, V., Baraskar, A., Lind, E., Koo, J., Griffith, Z., Hacker, J., Urteaga, M., Mensa, D., Pierson, R., Brar, B.

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III-V MOSFETs: Scaling laws, scaling limits, fabrication processes von Rodwell, M. J. W., Shin, B., Lee, Yong-ju, Steiger, S., Lee, S., Ryu, H., Tan, Y., Hegde, G., Wang, L., Chagarov, E., Gossard, A. C., Singisetti, U., Frensley, W., Kummel, A., Palmstrom, C., McIntyre, Paul C, Boykin, T., Klimek, G., Asbeck, P., Wistey, M., Burek, G. J., Carter, A., Baraskar, A., Law, J., Thibeault, B. J., Kim, Eun Ji

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Noise Propagation in Series Enzymatic Cascades von Baraskar, Ankit A., Deb, Aniket, Viswanathan, Ganesh A.

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High-performance Si1−xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions von Hashemi, P., Ott, J. A., Bedell, S. W., Murray, C. E., Liang, S., Dennard, R. H., Sleight, J. W., Leobandung, E., Park, D.-G., Kobayashi, M., Majumdar, A., Yang, L. A., Baraskar, A., Balakrishnan, K., Kim, W., Chan, K., Engelmann, S. U.

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Digital Design of DWPT Technique on FPGA for Power System Harmonics Estimation von Baraskar, Savita, Tiwari, Vinay K.

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