Thermoelectric properties of transmutation doped silicon crystals von Gaidar, G.P., Baranskii, P.I.

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Features of changes in electrophysical properties of silicon under the influence of thermal treatment von Gaidar, G.P., Baranskii, P.I.

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Tensoresistance of n-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it von Gaidar, G. P., Baranskii, P. I.

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Determination of the Degree of Homogeneity for n Ge Crystals by Measurements of Magnetoresistance in Classically Weak Magnetic Fields von Gaidar, G. P., Baranskii, P. I.

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Features of tensoresistance depending on the crystallographic orientation of γ-irradiated (60Co) germanium and silicon single crystals von Gaidar, G.P., Baranskii, P.I.

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Electron scattering anisotropy in silicon von Gaidar, G. P., Baranskii, P. I.

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Influence of gamma irradiation ( 60 Co) on the electrophysical parameters of n -Ge with a different doping level and with oxygen impurity in different states von Gaidar, G. P., Baranskii, P. I.

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Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment von Gaidar, G. P., Baranskii, P. I.

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Method for determination of the degree of compensation for electrically active impurities in multivalley semiconductors von Baranskii, P. I., Gaidar, G. P.

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Features of tensoresistance depending on the crystallographic orientation of ?-irradiated (^sup 60^Co) germanium and silicon single crystals von Gaidar, GP, Baranskii, PI

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Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity von Baranskii, P. I.

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Specific Features of Kinetic Effects Measured in (Cd, Hg) Te in Quantizing Magnetic Fields von Baranskii, P. I., Belyaev, A. E., Gorodnichii, O. P.

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Magnetic storms, long-term space flights, and aircraft crashes von Baranskii, P. I., Gaidar, G. P., Fedosov, A. V.

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Extreme Disordering of Electron Scattering in a Gapless Semiconductor von Baranskii, P. I., Belyaev, A. E., Zhidkov, A. V.

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Mechanisms Responsible for Anisotropy of Thermal E.M.F. in Semiconductors von Baranskii, P. I., Buda, I. S., Savyak, V. V.

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Influence of Hot Annealing and Cooling Rate on the Hall Effect and Piezoresistance in Transmutationally Doped and Ordinary Silicon Crystals von Baranskii, P. I., Savyak, V. V., Simonenko, Yu. V.

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Impurity scattering of electrons in quantizing magnetic fields von Baranskii, P. I., Demidenko, L. S., Korolyuk, S. L., Samoilovich, A. G.

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IR optical absorption and reflection spectra in narrow gap semiconductors von Baranskii, P.I., Gorodnichii, O.P., Shevchenko, N.V.

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Effect of Heat Treatment and Cooling Conditions on the Anisotropy Parameters of Drag TEMF in Neutron-Doped Silicon Crystals von Baranskii, P. I., Savyak, V. V., Simonenko, Y. V.

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The effect of heat treatment on compensated CZ silicon von Baranskii, P. I., Babich, V. M., Baran, N. P., Bugay, A. A., Dotsenko, Yu. P., Kovalchuk, V. B.

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