Dipolar cation accumulation at the interfaces of perovskite light-emitting solar cells von Gets, D. S, Verkhogliadov, G. A, Danilovskiy, E. Y, Baranov, A. I, Makarov, S. V, Zakhidov, A. A

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The Young’s Modulus of a Zigzag CNT/Graphene Composite by Tension along the Graphene Direction von Kolesnikova, A. S., Baranov, I. A., Mazepa, M. M.

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Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice von Babichev, A. V., Pirogov, E. V., Sobolev, M. S., Denisov, D. V., Fominykh, H. A., Baranov, A. I., Gudovskikh, A. S., Melnichenko, I. A., Yunin, P. A., Nevedomsky, V. N., Tokarev, M. V., Ber, B. Ya, Gladyshev, A. G., Karachinsky, L. Ya, Novikov, I. I., Egorov, A. Yu

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Self-Action of Light Beams in an Amorphous Azobenzene Polymer von Zolot’ko, A. S., Budagovsky, I. A., Baranov, A. I., Lagunov, V. V., Smayev, M. P., Kuznetsov, A. A., Bobrovsky, A. Yu

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Influence of the Design Features of a Magnetron Sputtering Deposition System on the Electrical and Optical Properties of Indium—Tin Oxide Films von Kudriashov, D. A., Maksimova, A. A., Vyacheslavova, E. A., Uvarov, A. V., Morozov, I. A., Baranov, A. I., Monastyrenko, A. O., Gudovskikh, A. S.

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Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation von Uvarov, A V, Gudovskikh, A S, Nevedomskiy, V N, Baranov, A I, Kudryashov, D A, Morozov, I A, Kleider, J-P

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Space charge capacitance study of GaP/Si multilayer structures grown by plasma deposition von Gudovskikh, A S, Baranov, A I, Uvarov, A V, Kudryashov, D A, Kleider, J-P

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Carrier density distribution in AlGaAs/GaAs superlattices with different numbers of quantum wells determined by capacitance-voltage profiling von Vasilkova, E I, Pirogov, E V, Sobolev, M S, Baranov, A I, Gudovskikh, A S, Khabibullin, R A, Bouravleuv, A D

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Optimization of superprotonic acid salts for fuel cell applications von Baranov, A.I., Grebenev, V.V., Khodan, A.N., Dolbinina, V.V., Efremova, E.P.

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Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface von Shugurov, K Yu, Mozharov, A M, Bolshakov, A D, Fedorov, V V, Sapunov, G A, Shtrom, I V, Uvarov, A V, Kudryashov, D A, Baranov, A I, Yu Mikhailovskii, V, Neplokh, V V, Tchernycheva, M, Cirlin, G E, Mukhin, I S

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Plasma Enhanced Atomic Layer Deposition of InP Layers and Multilayer InP/GaP Structures on Si Substrate von Gudovskikh, A. S., Uvarov, A. V., Baranov, A. I., Vyacheslavova, E. A., Maksimova, A. A., Kirilenko, D. A.

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Optimization of (p)a-Si:H/p-Si ohmic contact for solar cells von Kudryashov, D A, Baranov, A I, Uvarov, A V, Morozov, I A, Monastyrenko, A O, Gudovskikh, A S

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Investigation of defects in structures based on BP/Si heterojunction von Maksimova, A A, Baranov, A I, Uvarov, A V, Kudryashov, D A, Gudovskikh, A S

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A Selective BP/Si Contact Formed by Low-Temperature Plasma-Enhanced Atomic Layer Deposition von Gudovskikh, A. S., Kudryashov, D. A., Baranov, A. I., Uvarov, A. V., Morozov, I. A.

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Study of Latex sphere mask dry etching in oxygen von Morozov, I A, Vyacheslavova, K A, Gudovskikh, A S, Uvarov, A V, Baranov, A I, Kudryashov, D A

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Plasma-enhanced atomic layer deposition of Zn-doped GaP von Uvarov, A V, Gudovskikh, A S, Baranov, A I, Morozov, I A, Kudryashov, D A

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Influence of wet etching in KOH on defects in silicon nanowires formed by cryogenic dry etching von Baranov, A I, Kudryashov, D A, Morozov, I A, Uvarov, A V, Shugurov, K Yu, Gudovskikh, A S

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Capacitance characterization of GaP/Si superlattice grown by time-modulated PECVD von Baranov, A I, Morozov, I A, Uvarov, A V, Gudovskikh, A S

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Study of InP/GaP Quantum Wells Grown by Vapor Phase Epitaxy von Baranov, A. I., Uvarov, A. V., Maksimova, A. A., Vyacheslavova, E. A., Kalyuzhnyy, N. A., Mintairov, S. A., Salii, R. A., Yakovlev, G. E., Zubkov, V. I., Gudovskikh, A. S.

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Plasma-enhanced atomic layer deposition of GaP/GaN digital alloys von Uvarov, A V, Gudovskikh, A S, Baranov, A I, Morozov, I A, Kudryashov, D A

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