GaNP-based photovoltaic device integrated on Si substrate von Dvoretckaia, Liliia N., Bolshakov, Alexey D., Mozharov, Alexey M., Sobolev, Maxim S., Kirilenko, Demid A., Baranov, Artem I., Mikhailovskii, Vladimir Yu, Neplokh, Vladimir V., Morozov, Ivan A., Fedorov, Vladimir V., Mukhin, Ivan S.

Volltext

Study of Cryogenic Unmasked Etching of “Black Silicon” with Ar Gas Additives von Vyacheslavova, Ekaterina A, Morozov, Ivan A, Kudryashov, Dmitri A, Uvarov, Alexander V, Baranov, Artem I, Maksimova, Alina A, Abolmasov, Sergey N, Gudovskikh, Alexander S

Volltext

Defect properties of solar cells with layers of GaP based dilute nitrides grown by molecular beam epitaxy von Baranov, Artem I., Gudovskikh, Alexander S., Egorov, Anton Yu, Kudryashov, Dmitry A., Le Gall, Sylvain, Kleider, Jean-Paul

Volltext

Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD von Gudovskikh, Alexander S., Uvarov, Alexander V., Morozov, Ivan A., Baranov, Artem I., Kudryashov, Dmitry A., Zelentsov, Kirill S., Jaffré, Alexandre, Le Gall, Sylvain, Darga, Arouna, Brezard‐Oudot, Aurore, Kleider, Jean‐Paul

Volltext

Lanthanide(III)-Incorporating Polysiloxanes as Materials for Light-Emitting Devices von Miroshnichenko, Anna S, Deriabin, Konstantin V, Baranov, Artem I, Neplokh, Vladimir, Mitin, Dmitry M, Kolesnikov, Ilya E, Dobrynin, Mikhail V, Parshina, Elizaveta K, Mukhin, Ivan S, Islamova, Regina M

Volltext

GaPAsN-based light-emitting diode on silicon von Lazarenko, Alexandra A., Nikitina, Ekaterina V., Gudovskikh, Alexander S., Baranov, Artem I., Sobolev, Maxim S., Pirogov, Evgeny V., Egorov, Anton Yu

Volltext

Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon von Kudryashov, Dmitry A., Gudovskikh, Alexander S., Baranov, Artem I., Morozov, Ivan A., Monastyrenko, Anatoly O.

Volltext

Influence of PE‐ALD of GaP on the Silicon Wafers Quality von Baranov, Artem I., Gudovskikh, Alexander S., Kudryashov, Dmitriy A., Morozov, Ivan A., Mozharov, Alexey M., Nikitina, Ekaterina V., Zelentsov, Kirill S., Darga, Arouna, Le Gall, Sylvain, Kleider, Jean‐Paul

Volltext

Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy von Baranov, Artem I., Gudovskikh, Alexander S., Kudryashov, Dmitry A., Lazarenko, Alexandra A., Morozov, Ivan A., Mozharov, Alexey M., Nikitina, Ekaterina V., Pirogov, Evgeny V., Sobolev, Maxim S., Zelentsov, Kirill S., Egorov, Anton Yu, Darga, Arouna, Le Gall, Sylvain, Kleider, Jean-Paul

Volltext

n‐GaP/p‐Si Heterojunction Solar Cells Fabricated by PE‐ALD von Gudovskikh, Alexander S., Uvarov, Alexander V., Morozov, Ivan A., Baranov, Artem I., Kudryashov, Dmitry A., Nikitina, Ekaterina V., Kleider, Jean‐Paul

Volltext

Study of GaP Nucleation Layers Grown on Si by Plasma‐Enhanced Atomic Layer Deposition von Gudovskikh, Alexander S., Uvarov, Alexander. V., Morozov, Ivan A., Bukatin, Anton S., Baranov, Artem I., Kudryashov, Dmitry A., Kalyuzhnyy, Nikolay A., Mintairov, Sergey A., Zubkov, Vasily I., Yakovlev, George E., Kleider, Jean-Paul

Volltext

Plasma-Deposited Multilayer GaP/Si p‑i‑n Structure for Tandem Silicon-Based Solar Cells von Uvarov, Alexander V., Gudovskikh, Alexander S., Baranov, Artem I., Maksimova, Alina A., Kudryashov, Dmitriy A., Vyacheslavova, Ekaterina A., Yakovlev, George E., Zubkov, Vasily I.

Volltext

Low-Temperature Plasma Deposition of III–V Compounds on Silicon for Multijunction Solar Cells von Gudovskikh, Alexander S., Kudryashov, Dmitri A., Baranov, Artem I., Uvarov, Alexander V., Morozov, Ivan A., Monastyrenko, Anatoliy O., Maksimova, Alina A., Nashchekin, Alexey V., Vyacheslavova, Ekaterina A., Nevedomskiy, Vladimir N.

Volltext

Investigation of Plasma Deposited Boron Phosphide and Its Contact to Silicon von Maksimova, Alina A., Uvarov, Alexander V., Baranov, Artem I., Gudovskikh, Alexander S., Kudryashov, Dmitri A., Vyacheslavova, Ekaterina A., Morozov, Ivan A., Le Gall, Sylvain, Kleider, Jean-Paul

Volltext

Determination of the electron distribution in thin barrier AlGaAs/GaAs superlattices by capacitance-voltage profiling von Vasilkova, E.I., Pirogov, E.V., Sobolev, M.S., Baranov, A.I., Gudovskikh, A.S., Bouravleuv, A.D.

Volltext

Trimethylboron as a precursor for boron phosphide plasma deposition at low temperature von Maksimova, Alina, Uvarov, Alexander, Kirilenko, Demid, Baranov, Artem, Vyacheslavova, Ekaterina, Gudovskikh, Alexander, Kleider, Jean-Paul

Volltext

Conformal growth of GaP on high aspect ratio Si structured surface via plasma-enhanced atomic layer deposition von Uvarov, Alexander, Gudovskikh, Alexander, Baranov, Artem, Maksimova, Alina, Vyacheslavova, Ekaterina, Kirilenko, Demid

Volltext

The Study of Latex Sphere Lithography for High Aspect Ratio Dry Silicon Etching von Morozov, Ivan, Gudovskikh, Alexander, Uvarov, Alexander, Baranov, Artem, Sivakov, Vladimir, Kudryashov, Dmitri

Volltext

Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation von Uvarov, A V, Gudovskikh, A S, Nevedomskiy, V N, Baranov, A I, Kudryashov, D A, Morozov, I A, Kleider, J-P

Volltext

Impact of Interface Recombination on Quantum Efficiency of a‐Si:H/c‐Si Solar Cells Based on Si Wires von Gudovskikh, Alexander, Kudryashov, Dmitry, Baranov, Artem, Uvarov, Alexander, Morozov, Ivan, Maksimova, Alina, Vyacheslavova, Ekaterina, Kirilenko, Demid, Mozharov, Alexey

Volltext