Scaling behavior of hysteresis in multilayer MoS2 field effect transistors von Li, Tao, Du, Gang, Zhang, Baoshun, Zeng, Zhongming

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Implantation energy- and size-dependent light output of enhanced-efficiency micro-LED arrays fabricated by ion implantation von Xu, Feng, Tan, Yi, Xie, Zili, Zhang, Baoshun

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Diosmetin ameliorate type 2 diabetic mellitus by up-regulating Corynebacterium glutamicum to regulate IRS/PI3K/AKT-mediated glucose metabolism disorder in KK-Ay mice von Gong, Xiaobao, Xiong, Li, Bi, Caihong, Zhang, Baoshun

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Bandwidth-enhanced magnetoelectric antenna based on composite bulk acoustic resonators von Yun, Xiaofan, Lin, Wenkui, Hu, Rui, Liu, Yizhang, Wang, Xiaoyi, Yu, Guohao, Zeng, Zhongming, Zhang, Xinping, Zhang, Baoshun

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Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors von Xu, Ning, Hao, Ronghui, Chen, Fu, Zhang, Xiaodong, Zhang, Hui, Zhang, Peipei, Ding, Xiaoyu, Song, Liang, Yu, Guohao, Cheng, Kai, Cai, Yong, Zhang, Baoshun

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Monolithic high-performance micro-LEDs using planar-geometry pixelation process for high-resolution micro-display applications von Xu, Feng, Zhou, Yuxue, Meng, Xiangdong, Zhou, Liming, Xie, Zili, Yu, Guohao, Zhang, Baoshun

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Giant spin-torque diode sensitivity in the absence of bias magnetic field von Fang, Bin, Carpentieri, Mario, Hao, Xiaojie, Jiang, Hongwen, Katine, Jordan A., Krivorotov, Ilya N., Ocker, Berthold, Langer, Juergen, Wang, Kang L., Zhang, Baoshun, Azzerboni, Bruno, Amiri, Pedram Khalili, Finocchio, Giovanni, Zeng, Zhongming

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Electric-Field Control of Spin–Orbit Torques in WS2/Permalloy Bilayers von Lv, Weiming, Jia, Zhiyan, Wang, Bochong, Lu, Yuan, Luo, Xin, Zhang, Baoshun, Zeng, Zhongming, Liu, Zhongyuan

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Radiation-enhanced acoustically driven magnetoelectric antenna with floating potential architecture von Yun, Xiaofan, Lin, Wenkui, Hu, Rui, Liu, Yizhang, Wu, Dongmin, Zhang, Xinping, Zeng, Zhongming, Zhang, Baoshun

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Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs von Hao, Ronghui, Li, Weiyi, Fu, Kai, Yu, Guohao, Song, Liang, Yuan, Jie, Li, Junshuai, Deng, Xuguang, Zhang, Xiaodong, Zhou, Qi, Fan, Yaming, Shi, Wenhua, Cai, Yong, Zhang, Xinping, Zhang, Baoshun

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Electrical performance of multilayer MoS2 transistors on high- κ Al2O3 coated Si substrates von Li, Tao, Wan, Bensong, Du, Gang, Zhang, Baoshun, Zeng, Zhongming

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Enhancement of spin–orbit torque in WTe2/perpendicular magnetic anisotropy heterostructures von Lv, Wenxing, Xue, Hongwei, Cai, Jialin, Chen, Qian, Zhang, Baoshun, Zhang, Zongzhi, Zeng, Zhongming

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Tailoring the electrocatalytic activity of bimetallic nickel-iron diselenide hollow nanochains for water oxidation von Lv, Lin, Li, Zhishan, Xue, Kan-Hao, Ruan, Yunjun, Ao, Xiang, Wan, Houzhao, Miao, Xiangshui, Zhang, Baoshun, Jiang, Jianjun, Wang, Chundong, Ostrikov, Kostya (Ken)

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Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4 as Gate Dielectric and Passivation Layer von Zhang, Zhili, Yu, Guohao, Zhang, Xiaodong, Deng, Xuguang, Li, Shuiming, Fan, Yaming, Sun, Shichuang, Song, Liang, Tan, Shuxin, Wu, Dongdong, Li, Weiyi, Huang, Wei, Fu, Kai, Cai, Yong, Sun, Qian, Zhang, Baoshun

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Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs von Mengyuan Hua, Cheng Liu, Shu Yang, Shenghou Liu, Kai Fu, Zhihua Dong, Yong Cai, Baoshun Zhang, Chen, Kevin J.

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High-performance GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectric von Huang, Qizhi, Deng, Xuguang, Zhang, Li, Lin, Wenkui, Cheng, Wei, Yu, Guohao, Ju, Tao, Mudiyanselage, Dinusha Herath, Wang, Dawei, Fu, Houqiang, Zeng, Zhongming, Zhang, Baoshun, Xu, Feng

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Antioxidation, anti-inflammation and anti-apoptosis by paeonol in LPS/d-GalN-induced acute liver failure in mice von Gong, Xiaobao, Yang, You, Huang, Ligua, Zhang, Qingyan, Wan, Rong-Zhen, Zhang, Peng, Zhang, Baoshun

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Characterization of 87Rb MEMS vapor cells for miniature atomic magnetometers von Jiang, Minwei, Zhai, Hao, Jiang, Chunyu, Wang, Jian, Chen, Chen, Zhang, Qi, Wu, Dongmin, Zhang, Baoshun, Zeng, Zhongming, Lin, Jie, Wang, Yiqun, Jin, Peng

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Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment von Hao, Ronghui, Fu, Kai, Yu, Guohao, Li, Weiyi, Yuan, Jie, Song, Liang, Zhang, Zhili, Sun, Shichuang, Li, Xiajun, Cai, Yong, Zhang, Xinping, Zhang, Baoshun

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Anisotropic artificial synapse based on 2D ReS2 field-effect transistor von Wang, Qilitai, Lv, Wenxing, Cai, Jialin, Lv, Weiming, Lei, Ting, Cui, Boyao, Luo, Jun, Bian, Lifeng, Sun, Xuemei, Wu, Dongmin, Zhang, Baoshun, Zeng, Zhongming

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