Low capacitance approaches for 22nm generation Cu interconnect von Bao, T.I., Chen, H.C., Lee, C.J., Lu, H.H., Shue, S.L., Yu, C.H.

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Challenges of Low Effective-K approaches for future Cu interconnect von Bao, T.I., Chen, H.C., Lee, C.J., Lu, H.H., Chen, H.W., Tsai, H.Y., Lin, C.C., Jeng, S.P., Shue, S.L., Yu, C.H.

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A novel solution for porous low-k dual damascene post etch stripping/clean with supercritical CO/sub 2/ technology for 65nm and beyond applications von Wang, C.Y., Wu, W.J., Yang, C.M., Tseng, W.H., Chen, H.C., Bao, T.I., Lo, H., Wang, J., Yu, C.H., Liang, M.S.

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Supercritical CO/sub 2/ clean with novel solution for 65 nm and beyond BEOL performance improvement von Tseng, W.H., Yang, C.M., Wu, W.J., Wang, C.Y., Hu, J.C., Hsiung, C.H., Lin, Y.L., Bao, T.I., Yang, J.L., Shieh, J.H., Jeng, C.C., Lin, J.C., Huang, I.L., Chen, H.C., Lo, H., Wang, J., Yu, C.H., Liang, M.S.

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90 nm generation Cu/CVD low-k (k < 2.5) interconnect technology von Bao, T.I., Ko, C.C., Song, J.Y., Li, L.P., Lu, H.H., Lu, Y.C., Chen, Y.H., Jang, S.M., Liang, M.S.

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合成聚异戊二烯及其填充橡胶的结构与性能的调节 von Grishin B.S, Pisarenko T.I., Elshevskaya EA., 宋桂宝

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