Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics von Babcock, J.A., Balster, S.G., Pinto, A., Dirnecker, C., Steinmann, P., Jumpertz, R., El-Kareh, B.

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Heteroepitaxial S 1- x- yGe xC y films on (100) Si substrates for future low-power applications von Alford, T.L., Bair, A.E., Atzmon, Z., Stout, L.M., Balster, S.G., Schroder, D.K., Roedel, R.J.

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Heteroepitaxial S1-x-yGexCy films on (100) Si substrates for future low-power applications von Alford, T.L., Bair, A.E., Atzmon, Z., Stout, L.M., Balster, S.G., Schroder, D.K., Roedel, R.J.

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The effect of a CO growth ambient on the defect structure of EFG silicon von Balster, S.G., Schroder, D.K., Kalejs, J.P.

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