Prospects for 3C-SiC bulk crystal growth von Chaussende, D., Mercier, F., Boulle, A., Conchon, F., Soueidan, M., Ferro, G., Mantzari, A., Andreadou, A., Polychroniadis, E.K., Balloud, C., Juillaguet, S., Camassel, J., Pons, M.

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Application of LTPL Investigation Methods to CVD-Grown SiC von Camassel, J., Juillaguet, S., Zielinski, M., Balloud, C.

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Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls" von Peyre, Hervé, Arcade, P., Balloud, Carole, Juillaguet, Sandrine, Chassagne, Thierry, Leycuras, André

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Characterization of Bulk 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method von Camassel, Jean, Pons, Michel, Juillaguet, Sandrine, Rapenne, L., Madar, Roland, Balloud, Carole, Chaussende, Didier, Latu-Romain, Laurence, Pernot, Etienne

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Control of 3C-SiC/Si wafer bending by the "checker-board" carbonization method von Chassagne, T., Ferro, G., Haas, H., Mank, H., Leycuras, A., Monteil, Y., Soares, F., Balloud, C., Arcade, Ph, Blanc, C., Peyre, H., Juillaguet, S., Camassel, J.

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Application of LTPL investigation methods to CVD-grown SiC: Special issue on silicon carbide CVD for electronic device applications von CAMASSEL, Jean, JUILLAGUET, Sandrine, ZIELINSKI, Mann, BALLOUD, Carole

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Growth of Cubic Silicon Carbide Crystals from Solution von Mantzari, Alkyoni, Camassel, Jean, Santailler, Jean Louis, Passero, Antoine, Polychroniadis, Efstathios K., Basset, Alain, Soares, P., Ferrand, Bernard, Ferret, Pierre, Balloud, Carole, Pesenti, J., Eid, Jessica

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Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements von Camassel, Jean, Consejo, C., Juillaguet, Sandrine, Zielinski, Marcin, Balloud, Carole, Soulière, Véronique, Monteil, Yves, Boyer, Bernard, Sartel, C.

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Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers von Pernot, Julien, Camassel, Jean, Juillaguet, Sandrine, Balloud, Carole, Soulière, Véronique, Monteil, Yves, Sartel, C.

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Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC von Camassel, Jean, Balloud, Carole, Soulière, Véronique, Zielinski, Marcin, Juillaguet, Sandrine, Boyer, Bernard

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Growth at High Rates and Characterization of Bulk 3C-SiC Material von Camassel, Jean, Ferro, Gabriel, Balloud, Carole, Monteil, Yves, Juillaguet, Sandrine, Vicente, Patrice

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Comparative Evaluation of Free-Standing 3C-SiC Crystals von Camassel, Jean, Polychroniadis, Efstathios K., Juillaguet, Sandrine, Stoemenos, J., Balloud, Carole, Ferro, Gabriel, Monteil, Yves

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Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt von Camassel, Jean, Cauwet, François, Polychroniadis, Efstathios K., Zielinski, Marcin, Stoemenos, J., Ferro, Gabriel, Balloud, Carole, Monteil, Yves, Jacquier, Christophe

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Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method von Camassel, Jean, Auvray, Laurent, Pons, Michel, Zielinski, Marcin, Juillaguet, Sandrine, Mermoux, Michel, Madar, Roland, Balloud, Carole, Chaussende, Didier, Baillet, Francis, Pernot, Etienne

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Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers von Camassel, Jean, Polychroniadis, Efstathios K., Panknin, D., Stoemenos, J., Ferro, Gabriel, Balloud, Carole, Skorupa, Wolfgang, Monteil, Yves

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Comparative Studies of ‹0001› 4H-SiC Layers Grown with either Silane or HexaMethylDiSilane / Propane Precursor Systems von Camassel, Jean, Juillaguet, Sandrine, Dazord, Jacques, Balloud, Carole, Soulière, Véronique, Monteil, Yves, Sartel, C., Rushworth, S.

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Stable Parameter Range for 3C-SiC Sublimation Growth on Graphite von Mantzari, Alkyoni, Camassel, Jean, Wollweber, Jürgen, Nitschke, R., Polychroniadis, Efstathios K., Freudenberg, A., Balloud, Carole

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Potential of HMDS/C3H8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100) von Camassel, Jean, Polychroniadis, Efstathios K., Seigle-Ferrand, P., Smith, L.M., Juillaguet, Sandrine, Dazord, Jacques, Ferro, Gabriel, Balloud, Carole, Stoimenos, Y., Monteil, Yves, Rushworth, S.

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Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method von Chaussende, Didier, Balloud, Carole, Auvray, Laurent, Baillet, Francis, Zielinski, Marcin, Juillaguet, Sandrine, Mermoux, Michel, Pernot, Etienne, Camassel, Jean, Pons, Michel, Madar, Roland

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