Some theoretical results on timing characteristics of Ge(Li) detectors von Balland, J.C., Pigneret, J., Samueli, J.J.

Volltext

Considerations sur le bruit de l'etage d'entree d'un amplificateur d'impulsions von Balland, J.C., Pigneret, J., Samueli, J.-J., Sarazin, A.

Volltext

High temperature chromium volatilization from Cr2O3 powder and Cr2O3-doped UO2 pellets in reducing atmospheres von Peres, V., Favergeon, L., Andrieu, M., Palussière, J.C., Balland, J., Delafoy, C., Pijolat, M.

Volltext

Thermodynamical computation and physicochemical characterization of thin films deposited by electric-discharge-assisted chemical vapor deposition von Sassi, Z, Chafik, K, Bureau, J.C, Glachant, A, Balland, B

Volltext

Nitridation of SiO2 thin films at low ammonia pressures : composition and electrical properties von BALLAND, B, GLACHANT, A, BUREAU, J. C, PLOSSU, C

Volltext

Low-energy (3–100 eV) electron-bombardment-induced nitridation of thin SiO2 films: physicochemical and electrical analyses von Glachant, A., Garcia, V., Balland, B., Bureau, J.C., Plossu, C., Dupuy, J.C., Straboni, A.

Volltext

Low-energy (3–100 eV) electron-bombardment-induced nitridation of thin SiO 2 films: physicochemical and electrical analyses von Glachant, A., Garcia, V., Balland, B., Bureau, J.C., Plossu, C., Dupuy, J.C., Straboni, A.

Volltext

Nitridation of Sio2thin films in low ammonia pressures: An AES, SIMS, XPS and Raman spectroscopy investigation von Glachant, A., Balland, B., Ronda, A., Bureau, J.C., Plossu, C.

Volltext

Silicon nitride films deposited by Hg-photosensitization chemical vapor deposition von Lemiti, M., Audisio, S., Dupuy, J.C., Balland, B.

Volltext

Physicochemical characterization by means of IR absorption spectroscopy of Si 3N 4 thin films obtained by chemical vapour deposition assisted by in situ electrical disharge von Balland, B., Bureau, J.C., Botton, R., Glachant, A., Lemiti, M.

Volltext

Nitridation of thin SiO2 films induced by low energy (3–100 eV) electron bombardment von Garcia, V., Glachant, A., Bureau, J.C., Balland, B., Plossu, C., Dupuy, J.C., Straboni, A.

Volltext

Nitridation of thin SiO 2 films induced by low energy (3–100 eV) electron bombardment von Garcia, V., Glachant, A., Bureau, J.C., Balland, B., Plossu, C., Dupuy, J.C., Straboni, A.

Volltext

Nitridation of SiO 2 thin films at low ammonia pressures: Composition and electrical properties von Balland, B., Glachant, A., Bureau, J.C., Plossu, C.

Volltext

Physicochemical characterization by means of IR absorption spectroscopy of Si3N4 thin films obtained by chemical vapour deposition assisted by in situ electrical disharge von Balland, B., Bureau, J.C., Botton, R., Glachant, A., Lemiti, M.

Volltext

Model of Formation of Thin Insulating Films on Silicon von Sassi, Z., Bureau, J.C., Balland, B., Chafik, K., Glachant, A.

Volltext

Effects of addition of oxygen and water vapor in high thermal nitridation processes of SiO 2 thin films von Balland, B., Bureau, J.C., Benamar, A., Dubray, J.J., Glachant, A.

Volltext

A comparative study of hexahydrido - and hexadeuteridoaluminates of lithium and sodium; Electric conductivity of Li/sub 3/AlH and Na/sub 3/AlH/sub 6 von Bureau, J.C., Amri, Z., Claudy, P., Letoffe, J.M., Balland, B.

Volltext

Effects of addition of oxygen and water vapor in high thermal nitridation processes of SiO2 thin films von Balland, B., Bureau, J.C., Benamar, A., Dubray, J.J., Glachant, A.

Volltext

Nitridation of Sio 2thin films in low ammonia pressures: An AES, SIMS, XPS and Raman spectroscopy investigation von Glachant, A., Balland, B., Ronda, A., Bureau, J.C., Plossu, C.

Volltext

High and low thermal nitridation of SiO2 thin films von Balland, B., Bureau, J.C., Benamar, A., Ronda, A., Glachant, A.

Volltext