Modeling of Heat Transfer and Kinetics of Physical Vapor Transport Growth of Silicon Carbide Crystals von Chen, Q.-S, Zhang, H, Prasad, V, Balkas, C. M, Yushin, N. K

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Phonon density of states of bulk gallium nitride von Nipko, J. C., Loong, C.-K., Balkas, C. M., Davis, R. F.

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Enthalpy of Formation of Gallium Nitride von Ranade, M. R, Tessier, F, Navrotsky, A, Leppert, V. J, Risbud, S. H, DiSalvo, F. J, Balkas, C. M

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Kinetics and modeling of sublimation growth of silicon carbide bulk crystal von Chen, Q.-S., Zhang, H., Prasad, V., Balkas, C.M., Yushin, N.K., Wang, S.

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Modeling of silicon carbide crystal growth by physical vapor transport method von Ma, R.-H, Chen, Q.-S, Zhang, H, Prasad, V, Balkas, C.M, Yushin, N.K

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Modeling of transport processes and kinetics of silicon carbide bulk growth von Chen, Q.-S., Zhang, H., Ma, R.-H., Prasad, V., Balkas, C.M., Yushin, N.K.

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Synthesis Routes and Characterization of High-Purity, Single-Phase Gallium Nitride Powders von Balkaş, Cengiz M., Davis, Robert F.

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Growth and characterization of GaN single crystals von Balkaş, C.M., Sitar, Z., Bergman, L., Shmagin, I.K., Muth, J.F., Kolbas, R., Nemanich, R.J., Davis, R.F.

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Optical metastability in bulk GaN single crystals von Shmagin, I. K., Muth, J. F., Lee, J. H., Kolbas, R. M., Balkas, C. M., Sitar, Z., Davis, R. F.

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Sublimation growth and characterization of bulk aluminum nitride single crystals von Balkaş, Cengiz M., Sitar, Zlatko, Zheleva, Tsvetanka, Bergman, L., Nemanich, R., Davis, R.F.

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Reduction of Macrodefects in Bulk SiC Single Crystals von Yushin, Nikolay K., Balkas, Cengiz M., Roth, Matthew D., Maltsev, Andrei A., Sharma, Mrityunjay, Heydemann, V.D.

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Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport von Kopec, A., Sanchez, Edward M., Timmerman, A.G., Balkas, Cengiz M., Poplawski, S., Holmes, S.N., Wang, Shao Ping, Ware, R.

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Resistivity Mapping of Semi-Insulating 6H-SiC Wafers von Sharma, M., Mitchel, W.C., Roth, Matthew D., Heydemann, V.D., Yushin, Nikolay K., Balkas, Cengiz M., Wang, Shao Ping

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Modeling of silicon carbide crystal growth by physical vapor transport method von Ma, R H, Chen, Q.-S.,--, Zhang, H.,-, Prasad, V, Balkas, C M, Yushin, N K

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Resistivity mapping of semi-insulating 6H-SiC wafers von Roth, M D, Heydemann, V D, Mitchel, W C, Yushin, N K, Sharma, M, Wang, S, Balkas, C M

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Reduction of macrodefects in bulk SiC single crystals von Balkas, C M, Maltsev, A A, Roth, M D, Heydemann, V D, Sharma, M, Yushin, N K

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Growth of 3-inch diameter 6H-SiC single crystals by sublimation physical vapor transport von Wang, S, Sanchez, E K, Kopec, A, Poplawski, S, Ware, R, Holmes, S, Balkas, C M, Timmerman, A G

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Role of Temperature Gradient in Bulk Crystal Growth of SiC von Yushin, Nikolay K., Balkas, Cengiz M., Roth, Matthew D., Maltsev, Andrei A.

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ChemInform Abstract: Synthesis Routes and Characterization of High-Purity, Single-Phase Gallium Nitride Powders von BALKAS, C. M., DAVIS, R. F.

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Bulk Growth of Large Area SiC Crystals von Deyneka, Eugene, Seaman, Jeff, Dudley, Michael, Leonard, R.T., Ambati, Jyothi, Balkas, Elif, Khlebnikov, Yuri, Powell, Adrian R., Kramarenko, Olek, Guo, J.Q., McClure, Andy, O’Loughlin, M., Sumakeris, Joseph J., Sakhalkar, Varad, Paisley, Michael J., Tsevtkov, V., Burk, Albert A., Horton, Chris, Gangwal, Sumit

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