Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires von Balgarkashi, A, Ramanandan, S P, Tappy, N, Nahra, M, Kim, W, Güniat, L, Friedl, M, Morgan, N, Dede, D, Leran, J B, Couteau, C, Fontcuberta i Morral, A

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Optimizing dot-in-a-well infrared detector architecture for achieving high optical and device efficiency corroborated with theoretically simulated model von Ghadi, H., Patwari, J., Murkute, P., Das, D., Singh, P.K., Dubey, S., Bhatt, M., Chatterjee, A., Balgarkashi, A., Pal, S.K., Chakrabarti, S.

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Optimization of InAs quantum dots through growth interruption on InAs/GaAs quantum dot heterostructure von Tongbram, B., Ahmad, A., Sengupta, S., Mandal, A., Singhal, J., Balgarkashi, A., Chakrabarti, S.

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Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires von Balgarkashi, A, Ramanandan, S P, Tappy, N, Nahra, M, Kim, W, Güniat, L, Friedl, M, Morgan, N, Dede, D, Leran, J B, Couteau, C, Fontcuberta i Morral, A

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Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires von Balgarkashi, A, Ramanandan, S. P, Tappy, N, Nahra, M, Kim, W, Guniat, L, Friedl, M, Morgan, N, Dede, D, Leran, J. B, Couteau, C, Fontcuberta i Morral, A

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Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator von Kim, Hyunseok, Lee, Wook-Jae, Farrell, Alan C, Balgarkashi, Akshay, Huffaker, Diana L

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Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch von Dede, Didem, Glas, Frank, Piazza, Valerio, Morgan, Nicholas, Friedl, Martin, Güniat, Lucas, Nur Dayi, Elif, Balgarkashi, Akshay, Dubrovskii, Vladimir G, Fontcuberta i Morral, Anna

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Optimization of dot layer periodicity through analysis of strain and electronic profile in vertically stacked InAs/GaAs Quantum dot heterostructure von Panda, Debiprasad, Saha, Jhuma, Balgarkashi, Akshay, Shetty, Saikalash, Rawool, Harshal, Singh, Sandeep Madhusudan, Upadhyay, Saurabh, Tongbram, Binita, Chakrabarti, Subhananda

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Single-Crystalline γ‑Ga2S3 Nanotubes via Epitaxial Conversion of GaAs Nanowires von Sutter, Eli, French, Jacob S, Balgarkashi, Akshay, Tappy, Nicolas, Fontcuberta i Morral, Anna, Idrobo, Juan Carlos, Sutter, Peter

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Unveiling the complex phonon nature and phonon cascades in 1L to 5L WSe using multiwavelength excitation Raman scattering von Blaga, Claire, Labordet Álvarez, Ángel, Balgarkashi, Akshay, Banerjee, Mitali, Fontcuberta i Morral, Anna, Dimitrievska, Mirjana

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Unveiling the complex phonon nature and phonon cascades in 1L to 5L WSe 2 using multiwavelength excitation Raman scattering von Blaga, Claire, Labordet Álvarez, Ángel, Balgarkashi, Akshay, Banerjee, Mitali, Fontcuberta I Morral, Anna, Dimitrievska, Mirjana

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Vertical strain-induced dot size uniformity and thermal stability of InAs/GaAsN/GaAs coupled quantum dots von Biswas, Mahitosh, Singh, Sandeep, Balgarkashi, Akshay, Makkar, Roshan, Bhatnagar, Anuj, Sreedhara, Sheshadri, Chakrabarti, Subhananda

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Ultranarrow spectral response of InGaAs QDIPs through the optimization of strain-coupled stacks and capping layer composition von Panda, Debiprasad, Balgarkashi, Akshay, Shetty, Saikalash, Ghadi, Hemant, Tongbram, Binita, Chakrabarti, Subhananda

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III–V Integration on Si(100): Vertical Nanospades von Güniat, Lucas, Martí-Sánchez, Sara, Garcia, Oscar, Boscardin, Mégane, Vindice, David, Tappy, Nicolas, Friedl, Martin, Kim, Wonjong, Zamani, Mahdi, Francaviglia, Luca, Balgarkashi, Akshay, Leran, Jean-Baptiste, Arbiol, Jordi, Fontcuberta i Morral, Anna

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Spatial Modulation of Vibrational and Luminescence Properties of Monolayer MoS₂ Using a GaAs Nanowire Array von Balgarkashi, Akshay, Piazza, Valerio, Jasinski, Jakub, Frisenda, Riccardo, Surrente, Alessandro, Baranowski, Michal, Dimitrievska, Mirjana, Dede, Didem, Kim, Wonjong, Guniat, Lucas, Leran, Jean-Baptiste, Castellanos-Gomez, Andres, Plochocka, Paulina, Fontcuberta i Morral, Anna

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Ultrathin GaAsN matrix-induced reduced full width at half maximum of GaAsN/InAs/GaAsN dot-in-a-well heterostructures with extended emission wavelength von Biswas, Mahitosh, Balgarkashi, Akshay, Makkar, Roshan Lal, Bhatnagar, Anuj, Chakrabarti, Subhananda

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Single-Crystalline γ-Ga 2 S 3 Nanotubes via Epitaxial Conversion of GaAs Nanowires von Sutter, Eli, French, Jacob S, Balgarkashi, Akshay, Tappy, Nicolas, Fontcuberta I Morral, Anna, Idrobo, Juan Carlos, Sutter, Peter

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Unveiling the complex phonon nature and phonon cascades in 1L to 5L WSe2 using multiwavelength excitation Raman scattering von Blaga, Claire, Labordet Álvarez, Ángel, Balgarkashi, Akshay, Banerjee, Mitali, Fontcuberta I Morral, Anna, Dimitrievska, Mirjana

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Defect annihilation-mediated enhanced activation energy of GaAs 0.979 N 0.021 -capped InAs/GaAs quantum dots by H − ion implantation von Biswas, Mahitosh, Singh, Sandeep, Balgarkashi, Akshay, Makkar, Roshan L., Bhatnagar, Anuj, Subrahmanyam, N.B.V., Gupta, Shrikrishna K., Bhagwat, Pramod, Chakrabarti, Subhananda

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In0.5Ga0.5As Bilayer Quantum Dot Heterostructure for mid-infrared photodetection von Panda, Debiprasad, Balgarkashi, Akshay, Singh, Sandeep Madhusudan, Shetty, Saikalash, Rawool, Harshal, Chakrabarti, Subhananda

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