High-Power Modular Multilevel Converters With SiC JFETs von Peftitsis, D., Tolstoy, G., Antonopoulos, A., Rabkowski, J., Jang-Kwon Lim, Bakowski, M., Ängquist, Lennart, Nee, H.

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Railway tracks can have great value for butterflies as a new alternative habitat von Kalarus, K, Bąkowski, M

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(Invited) Ultrawide Bandgap β-Ga2O3 Thin Films: Growths, Properties and Devices von Rafique, Subrina, Han, Lu, Zhao, Hongping

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High-Efficiency Power Conversion Using Silicon Carbide Power Electronics von Sadik, Diane Perle, Antonopoulos, A., Colmenares, J., Lim, Jang Kwon, Rabkowski, J., Tolstoy, G., Zdanowski, M., Nee, Hans Peter, Bakowski, M., Ängquist, L., Peftitsis, D.

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Progress towards SiC products von Harris, C.I., Savage, S., Konstantinov, A., Bakowski, M., Ericsson, P.

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Analysis of 1.2 kV SiC buried-grid VJFETs von Lim, J-K, Bakowski, M

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(Invited) Polarization-Induced Doping in Graded AlGaN Epilayers Grown on AlN Single Crystal Substrates von Dalmau, Rafael, Moody, Baxter

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N- and P- type Doping in Al-rich AlGaN and AlN von Sarkar, Biplab, Washiyama, Shun, Breckenridge, M. Hayden, Klump, Andrew, Baker, Jonathon N., Reddy, Pramod, Tweedie, James, Mita, Seiji, Kirste, Ronny, Irving, Doug L., Collazo, Ramon, Sitar, Zlatko

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(Invited) Growth and Characterization of α-, β-, and ε-Ga2O3 Epitaxial Layers on Sapphire von Yao, Yao, Lyle, Luke A. M., Rokholt, Johanne A., Okur, Serdal, Tompa, Gary S., Salagaj, Tom, Sbrockey, Nick, Davis, Robert F., Porter, Lisa M.

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Simulation of SiC High Power Devices von Bakowski, M., Gustafsson, U., Lindefelt, U.

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Silicon Carbide APD with Improved Detection Sensitivity and Stability von Schöner, Adolf, Petermann, Ingemar, Bakowski, Mietek, Savage, Susan

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High current capability of 3C-SiC vertical DMOSFETs von Abe, M., Nagasawa, H., Ericsson, P., Strömberg, H., Bakowski, M., Schöner, A.

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(Invited) 650 Volt GaN Commercialization Reaches Automotive Standards von Parikh, Primit, Smith, Kurt, Barr, Ron, Shono, Ken, McKay, J., Shen, Likun, Lal, R., Chowdhury, S., Yea, S., Smith, R. P., Hosoda, T., Gritters, J., McCarthy, L., Birkhahn, R., Imanishi, K., Swenson, B., Moore, M., Kotani, Y., Ogino, T., Bushnell, N., Guerrero, J., Clement, H., Asai, Y., Wu, YiFeng

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Reduction of leakage current of 4H-SiC pin diodes after UV light exposure von WOLBORSKI, M, BAKOWSKI, M, SCHÖNER, A

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A nutrient-limited screen unmasks rifabutin hyperactivity for extensively drug-resistant Acinetobacter baumannii von Luna, Brian, Trebosc, Vincent, Lee, Bosul, Bakowski, Malina, Ulhaq, Amber, Yan, Jun, Lu, Peggy, Cheng, Jiaqi, Nielsen, Travis, Lim, Juhyeon, Ketphan, Warisa, Eoh, Hyungjin, McNamara, Case, Skandalis, Nicholas, She, Rosemary, Kemmer, Christian, Lociuro, Sergio, Dale, Glenn E., Spellberg, Brad

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Analysis of Unipolar and Bipolar Cascoded Switches with MOS Gate von Bakowski, Mietek

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(Invited) ScAlN: A Novel Barrier Material for High Power GaN-Based RF Transistors von Hardy, Matthew T., Downey, Brian P., Nepal, Neeraj, Storm, David F., Katzer, D. Scott, Meyer, David J.

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Localized Lifetime Control of 10 kV 4H-SiC PiN Diodes by MeV Proton Implantation von Bakowski, Mietek, Reshanov, Sergey, Nee, Hans Peter, Jacobs, Keijo, Ranstad, Per, Schöner, Adolf, Yuan, Zimo, Kaplan, Wlodek, Hallén, Anders

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Analysis and Experimental Verification of the Influence of Fabrication Process Tolerances and Circuit Parasitics on Transient Current Sharing of Parallel-Connected SiC JFETs von Jang-Kwon Lim, Peftitsis, Dimosthenis, Rabkowski, Jacek, Bakowski, Mietek, Nee, Hans-Peter

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Development of High Temperature Operation SiC Power Module von Sato, Shinji, Kato, Fumiki, Tanisawa, Hidekazu, Koui, Kenichi, Watanabe, Kinuyo, Murakami, Yoshinori, Sato, Hiroshi, Yamaguchi, Hiroshi

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